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Immunity, ISSN 1074-7613, 07/2015, Volume 43, Issue 1, pp. 175 - 186
Journal Article
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, ISSN 0021-4922, 10/2006, Volume 45, Issue 10A, pp. 7565 - 7586
Journal Article
Proceedings of the National Academy of Sciences of the United States of America, ISSN 0027-8424, 3/2015, Volume 112, Issue 13, pp. 4086 - 4091
Journal Article
Catalysis communications, ISSN 1566-7367, 04/2018, Volume 108, pp. 7 - 11
The KCaF3/C (K-Ca(A)) catalyst was shown to be effective as heterogeneous basic catalysts for the transesterification of ethylene carbonate (EC) and ethanol... 
Fluoro-perovskite | Diethyl carbonate | Transesterification | Perovskite | Alcohol, Denatured | Catalysts | Ethylene | Alcohol | Carbonates | Leaching
Journal Article
CRYSTENGCOMM, ISSN 1466-8033, 11/2018, Volume 2, Issue 45, pp. 7364 - 737
We propose a new growth technique, ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE), for high quality AlN growth. Nitrogen (N 2 )... 
SUBLIMATION GROWTH | SAPPHIRE | LATTICE POLARITY | GAN FILMS | IMPROVEMENT | ALUMINUM NITRIDE | CRYSTALLOGRAPHY | CHEMISTRY, MULTIDISCIPLINARY | BULK SINGLE-CRYSTALS | LAYERS | Ammonia | Vapor phase epitaxy | Sapphire | Vapor phases | Metalorganic vapor phase epitaxy | X-ray diffraction | Polarity | Epitaxial growth | High temperature | Substrates | Aluminum nitride
Journal Article
Journal of Gastroenterology, ISSN 0944-1174, 4/2011, Volume 46, Issue 4, pp. 448 - 455
Journal Article
Materials science forum, ISSN 0255-5476, 06/2018, Volume 924, pp. 55 - 59
... Hayashi1, Tomohisa Kato1 and Hajime Okumura1 1National institute of advanced industrial science and technology, Onogawa, Tsukuba, Ibaraki, 305-8569, Japan an-komatsu... 
Additive | Impurity | Solution growth | Surface morphology | Additives | Surface stability | Smoothness | Polytypes
Journal Article
Materials science forum, ISSN 0255-5476, 05/2016, Volume 858, pp. 77 - 80
Low resistivity p-type SiC bulk crystals were grown by the sublimation method with using aluminum and nitrogen co-doping. In the sublimation growth of 4H-SiC,... 
Sublimation growth | Bulk 4H-SiC | Al doping | p-type 4H-SiC | Co-doping | N doping | Silicon carbide | Stabilization | Aluminum | Electrical resistivity | Polytypes | Sublimation | Crystals | Nitrogen
Journal Article
Journal of Immunology, ISSN 0022-1767, 10/2017, Volume 199, Issue 8, pp. 2958 - 2967
Journal Article
2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), ISSN 1662-9752, 09/2016, Volume 897, pp. 1 - 1
..., Shinsuke Harada1,c, Hiroshi Yano2,d, and Hajime Okumura1,e 1Advance Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568... 
Temperature measurement | NO POA | MOSFET | Pulse measurements | pulsed AC gate bias stress | Logic gates | high-speed measurement | Threshold voltage | V th shift | positive bias temperature instability (PBTI) | Stress | Stress measurement | Pulsed AC gate bias stress | High-speed measurement | Positive bias temperature instability (PBTI) | shift | Silicon carbide
Conference Proceeding
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, ISSN 0021-4922, 10/2006, Volume 45, Issue 10 A, pp. 7565 - 7586
Journal Article
Materials science forum, ISSN 0255-5476, 05/2016, Volume 858, pp. 433 - 436
The new indicators, effective gate oxide thickness tc and effective gate electrode area D, and their combination are applied for a new analysis method of... 
Effective oxide thickness | Oxide thickness fluctuation | Effective gate electrode area | F-N tunneling | Electrodes | Capacitors | Fluctuation | Tunneling | Oxides | Reliability analysis | Indicators | Gates
Journal Article
Immunity, ISSN 1074-7613, 02/2015, Volume 42, Issue 2, pp. 279 - 293
Journal Article
2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), ISSN 1662-9752, 09/2016, Volume 897, pp. 1 - 1
...Improvement of Quality of Thick 4H-SiC Epilayers Akira Miyasaka1,2,a *, Kazutoshi Kojima1,b, Kenji Momose2, Hiroshi Osawa2 and Hajime Okumura1 1 National... 
Insulated gate bipolar transistors | Temperature measurement | Silicon carbide | Atom optics | Stacking | Thick epilayer | Epitaxial growth | 4H-SiC | Inductors | Surface roughness
Conference Proceeding
Annals of Surgical Oncology, ISSN 1068-9265, 4/2017, Volume 24, Issue 4, pp. 1135 - 1142
Journal Article
SCIENTIFIC REPORTS, ISSN 2045-2322, 11/2019, Volume 9, Issue 1, pp. 17067 - 13
Journal Article
Materials science forum, ISSN 0255-5476, 06/2018, Volume 924, pp. 935 - 938
... Umezawa1,4,b , Shinya Ohmagari4,c, Hajime Okumura2,3,d, Yoshiaki Mokuno4,e and Etienne Gheeraert1,2,f 1Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000... 
Lateral depletion region expansion | MESFET | Diamond | EBIC | Semiconductor devices | Field effect transistors | Diamonds | Electron beam induced current | Condensed Matter | Materials Science | Physics
Journal Article
Journal Article