X
Search Filters
Format Format
Subjects Subjects
Subjects Subjects
X
Sort by Item Count (A-Z)
Filter by Count
silicon germanium (15) 15
engineering, electrical & electronic (12) 12
heterojunction bipolar transistors (9) 9
silicon (7) 7
silicon germanides (6) 6
temperature measurement (6) 6
cryogenic (5) 5
cryogenics (5) 5
nuclear science & technology (5) 5
physics, applied (5) 5
reliability (5) 5
degradation (4) 4
sige hbt (4) 4
silicon-on-insulator (4) 4
bicmos (3) 3
bipolar-transistors (3) 3
current measurement (3) 3
electric potential (3) 3
high voltage (3) 3
mixed-mode stress (3) 3
radiation effects (3) 3
sige (3) 3
sige heterojunction bipolar transistors (3) 3
single-event transient (3) 3
stress (3) 3
tcad (3) 3
technology (3) 3
temperature sensors (3) 3
transient analysis (3) 3
transistors (3) 3
annealing (2) 2
base (2) 2
bias dependence (2) 2
bicmos integrated circuits (2) 2
charge collection (2) 2
complementary sige (2) 2
cooling (2) 2
engineering (2) 2
gain (2) 2
germanium (2) 2
high temperature (2) 2
hot carriers (2) 2
impact ionization (2) 2
ions (2) 2
junctions (2) 2
linearity (2) 2
mitigation (2) 2
operation (2) 2
performance evaluation (2) 2
power electronics (2) 2
quantum computing (2) 2
radio frequency (2) 2
research (2) 2
semiconductor devices (2) 2
semiconductor optical amplifiers (2) 2
silicon-germanium technology (2) 2
simulation (2) 2
single-event effects (2) 2
temperature (2) 2
temperature dependence (2) 2
temperature distribution (2) 2
terahertz (2) 2
total ionizing dose (2) 2
transient response (2) 2
usage (2) 2
voltage (2) 2
absorption (1) 1
acceptability (1) 1
activation energy (1) 1
aging (1) 1
aircraft components (1) 1
amplitudes (1) 1
analysis (1) 1
auger recombination (1) 1
augers (1) 1
automotive components (1) 1
avalanche generation (1) 1
bandgap reference (1) 1
base junction traps (1) 1
bicmos circuits (1) 1
bipolar transistor (1) 1
bipolar transistors (1) 1
bjts (1) 1
broadband (1) 1
c-sige (1) 1
carrier generation (1) 1
carrier transport (1) 1
circuit (1) 1
circuits (1) 1
complementary sige hbt (1) 1
complementary silicon-germanium (1) 1
complementary silicon–germanium (1) 1
computer simulation (1) 1
cryogenic effects (1) 1
cryogenic engineering (1) 1
cryogenic temperature (1) 1
cryogenic temperatures (1) 1
current density (1) 1
current gain enhancement (1) 1
damage detection (1) 1
more...
Language Language
Publication Date Publication Date
Click on a bar to filter by decade
Slide to change publication date range


IEEE Electron Device Letters, ISSN 0741-3106, 01/2017, Volume 38, Issue 1, pp. 12 - 15
We present the first measurement results of a highly scaled, 90-nm silicon-germanium heterojunction bipolar transistor (SiGe HBT) operating at cryogenic... 
Cryogenic | Semiconductor device measurement | magnetic field | SiGe | Current measurement | quantum computing | Cryogenics | Heterojunction bipolar transistors | readout | Silicon germanium | Magnetic tunneling | BIPOLAR-TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC | Engineering
Journal Article
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2014, Volume 35, Issue 2, pp. 151 - 153
Journal Article
Journal Article
IEEE transactions on electron devices, ISSN 1557-9646, 2018, Volume 65, Issue 6, pp. 2430 - 2438
Journal Article
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2014, Volume 35, Issue 2, pp. 151 - 153
We demonstrate record ac performance (0.8 THz) for a silicon-germanium heterojunction bipolar transistor (SiGe HBT) operating at cryogenic temperatures. An... 
Performance evaluation | Cryogenic | BiCMOS | Cooling | terahertz | Cryogenics | SiGe HBT | BiCMOS integrated circuits | Heterojunction bipolar transistors | Silicon germanium | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 11/2019, pp. 1 - 4
This work presents the design of a broadband logarithmic (log) power detector implemented using 130 nm SiGe BiCMOS technology. The proposed log detector uses a... 
power detector | SiGe BiCMOS | broadband | logarithmic amplifier
Conference Proceeding
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 10/2018, pp. 206 - 209
The present work demonstrates the use of SiGe-on-SOI heterojunction bipolar transistors (HBTs) to implement analog building blocks that can operate from 24°Cto... 
Temperature measurement | Temperature distribution | Current measurement | Mirrors | Electrical resistance measurement | Integrated circuit modeling | Silicon germanium
Conference Proceeding
IEEE electron device letters, ISSN 0741-3106, 02/2014, Volume 35, Issue 2, p. 151
  We demonstrate record ac performance (0.8 THz) for a silicon-germanium heterojunction bipolar transistor (SiGe HBT) operating at cryogenic temperatures. An... 
Journal Article
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 11/2019, pp. 1 - 4
We present measurement results of commercially-available 90-nm SiGe HBTs at 300 K, 78 K, and 7 K. The data reveal increased variability of SiGe HBTs at 78 K... 
Cryogenic | BiCMOS | SiGe | quantum computing | readout circuits
Conference Proceeding
2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), ISSN 1088-9299, 10/2017, Volume 2017-, pp. 122 - 125
This paper presents an overview of the various failure mechanisms observed when a SiGe HBT is operated outside of traditionally-defined electrothermal safe... 
Electric breakdown | soft breakdown | reliability | hard breakdown | Silicon germanium | Semiconductor optical amplifiers | Temperature measurement | SiGe HBT | junction breakdown | self-heating | Heterojunction bipolar transistors | Junctions | Current density | Hard breakdown | Reliability | Soft breakdown | Junction breakdown | Self-heating
Conference Proceeding
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, ISSN 1088-9299, 10/2015, Volume 2015-, pp. 27 - 30
For the first time, the high temperature (to 300°C) DC and AC performance of a > 100 GHz f T /f max SiGe HBTs on thick-film SOI are investigated for their... 
Temperature measurement | Performance evaluation | Temperature distribution | Thermal resistance | Silicon germanium
Conference Proceeding
IEEE Conferences, 10/2015, pp. 27 - 30
For the first time, the high temperature (to 300 degree C) DC and AC performance of a > 100 GHz f sub(T)/f sub(max) SiGe HBTs on thick-film SOI are... 
Platforms | Aircraft components | Circuits | Devices | Gain | Automotive components | Acceptability | Silicon germanides
Journal Article
No results were found for your search.

Cannot display more than 1000 results, please narrow the terms of your search.