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by Anashin, V.V and Anchugov, O.V and Aulchenko, V.M and Baldin, E.M and Baranov, G.N and Barladyan, A.K and Barnyakov, M.Yu and Barnyakov, A.Yu and Baru, S.E and Basok, I.Yu and Batrakov, A.M and Bekhtenev, E.A and Blinov, A.E and Blinov, V.E and Bobrov, A.V and Bobrovnikov, V.S and Bogomyagkov, A.V and Bondar, A.E and Buzykaev, A.R and Cheblakov, P.B and Dorohov, V.L and Eidelman, S.I and Grigoriev, D.N and Glukhov, S.A and Kaminskiy, V.V and Karnaev, S.E and Karpov, G.V and Karpov, S.V and Karukina, K.Yu and Kashtankin, D.P and Kasyanenko, P.V and Kharlamova, T.A and Kiselev, V.A and Kolmogorov, V.V and Kononov, S.A and Kotov, K.Yu and Krasnov, A.A and Kravchenko, E.A and Kudryavtsev, V.N and Kulikov, V.F and Kurkin, G.Ya and Kuyanov, I.A and Levichev, E.B and Maksimov, D.A and Malyshev, V.M and Maslennikov, A.L and Meshkov, O.I and Mishnev, S.I and Morozov, I.I and Morozov, I.A and Nikitin, S.A and Nikolaev, I.B and Okunev, I.N and Onuchin, A.P and Oreshkin, S.B and Osipov, A.A and Ovtin, I.V and Peleganchuk, S.V and Pivovarov, S.G and Piminov, P.A and Petrov, V.V and Prisekin, V.G and Rezanova, O.L and Ruban, A.A and Savinov, G.A and Shamov, A.G and Shatilov, D.N and Shvedov, D.A and Shwartz, B.A and Simonov, E.A and Sinyatkin, S.V and Skrinsky, A.N and Sokolov, A.V and Sukhanov, D.P and Sukharev, A.M and Starostina, E.V and Talyshev, A.A and Tayursky, V.A and Telnov, V.I and Tikhonov, Yu.A and Todyshev, K.Yu and Tribendis, A.G and Tumaikin, G.M and Usov, Yu.V and Vorobiov, A.I and Zhilich, V.N and Zhukov, A.A and Zhulanov, V.V and Zhuravlev, A.N
Physics Letters B, ISSN 0370-2693, 01/2019, Volume 788, pp. 42 - 51
The present work continues a series of the KEDR measurements of the value that started in 2010 at the VEPP-4M collider. By combining new data with our previous... 
Journal Article
Physics Letters B, ISSN 0370-2693, 02/2016, Volume 753, Issue C, pp. 533 - 541
Using the KEDR detector at the VEPP-4M collider, we have measured the values of and at seven points of the center-of-mass energy between 3.12 and 3.72 GeV. The... 
Journal Article
Physics Letters B, ISSN 0370-2693, 07/2017, Volume 770, Issue C, pp. 174 - 181
Journal Article
by Anashin, V.V and Anchugov, O.V and Aulchenko, V.M and Baldin, E.M and Baranov, G.N and Barladyan, A.K and Barnyakov, M.Yu and Barnyakov, A.Yu and Baru, S.E and Basok, I.Yu and Batrakov, A.M and Bekhtenev, E.A and Blinov, A.E and Blinov, V.E and Bobrov, A.V and Bobrovnikov, V.S and Bogomyagkov, A.V and Bondar, A.E and Buzykaev, A.R and Cheblakov, P.B and Dorohov, V.L and Eidelman, S.I and Grigoriev, D.N and Glukhov, S.A and Karnaev, S.E and Karpov, S.V and Karpov, G.V and Karukina, K.Yu and Kashtankin, D.P and Kharlamova, T.A and Kiselev, V.A and Kolmogorov, V.V and Kononov, S.A and Kotov, K.Yu and Krasnov, A.A and Kravchenko, E.A and Kudryavtsev, V.N and Kulikov, V.F and Kurkin, G.Ya and Kuyanov, I.A and Kuper, E.A and Levichev, E.B and Maksimov, D.A and Malyshev, V.M and Maslennikov, A.L and Meshkov, O.I and Mishnev, S.I and Morozov, I.I and Morozov, I.A and Muchnoi, N.Yu and Nikitin, S.A and Nikolaev, I.B and Okunev, I.N and Onuchin, A.P and Oreshkin, S.B and Osipov, A.A and Ovtin, I.V and Peleganchuk, S.V and Pivovarov, S.G and Piminov, P.A and Petrov, V.V and Prisekin, V.G and Rezanova, O.L and Ruban, A.A and Savinov, G.A and Shamov, A.G and Shatilov, D.N and Shvedov, D.A and Shwartz, B.A and Simonov, E.A and Sinyatkin, S.V and Skrinsky, A.N and Sokolov, A.V and Sukhanov, D.P and Sukharev, A.M and Starostina, E.V and Talyshev, A.A and Tayursky, V.A and Telnov, V.I and Tikhonov, Yu.A and Todyshev, K.Yu and Tribendis, A.G and Tumaikin, G.M and Usov, Yu.V and Vorobiov, A.I and Zhilich, V.N and Zhukov, A.A and Zhulanov, V.V and Zhuravlev, A.N
Physics Letters B, ISSN 0370-2693, 06/2018, Volume 781, pp. 174 - 181
The product of the electronic width of the (2S) meson and the branching fraction of its decay to the muon pair was measured in the process using nine data sets... 
Leptonic width | ψ(2S) meson | Branching fraction
Journal Article
Physics Letters B, ISSN 0370-2693, 10/2015, Volume 749, Issue C, pp. 50 - 56
We present the analysis of all KEDR data on the determination of and masses. The data comprise six scans of and seven scans of which were performed at the... 
Nuclear and High Energy Physics | Physics
Journal Article
Thin Solid Films, ISSN 0040-6090, 01/2018, Volume 646, p. 158
To access, purchase, authenticate, or subscribe to the full-text of this article, please visit this link: http://dx.doi.org/10.1016/j.tsf.2017.11.037 The paper... 
Thin films | Nitrides | Silicon carbide | Analysis | Epitaxy | Silicon | Liquors | Dielectric films | Raman spectroscopy | Mechanical engineering
Journal Article
Physics Letters B, ISSN 0370-2693, 11/2014, Volume 738, pp. 391 - 396
Using the inclusive photon spectrum based on a data sample collected at the peak with the KEDR detector at the VEPP-4M collider, we measured the rate of the... 
Radiative decays | Charmonium | High Energy Physics - Experiment | Nuclear and High Energy Physics | Physics
Journal Article
Acta Mathematica Hungarica, ISSN 0236-5294, 2018
Journal Article
Journal of Physics: Conference Series, ISSN 1742-6588, 12/2019, Volume 1410, p. 12244
Journal Article
Semiconductors, ISSN 1063-7826, 3/2017, Volume 51, Issue 3, pp. 396 - 401
A chemical-etching based method for separating GaN/AlN and AlN epitaxial heterostructures grown on silicon with a silicon-carbide buffer layer and transferring... 
Physics | Magnetism, Magnetic Materials | Physics, general | VAPOR-PHASE EPITAXY | PHYSICS, CONDENSED MATTER | ALN | HIGH-POWER ELECTRONICS | GAN | SEMICONDUCTORS | GROWTH | OPTICAL-PROPERTIES | THERMAL-EXPANSION COEFFICIENT | SILICON-CARBIDE | LAYERS | Aluminum compounds | Motion pictures | Silicon | Epitaxy | Carbides
Journal Article
Journal of Physics: Conference Series, ISSN 1742-6588, 2018, Volume 1124, Issue 2, p. 22006
Conference Proceeding
Journal of Physics D: Applied Physics, ISSN 0022-3727, 08/2014, Volume 47, Issue 31, pp. 1 - 41
The recent advances in epitaxial SiC films' growth on Si are overviewed. The basic classical methods currently used for SiC films' growth are discussed and... 
heteroepitaxy | nucleation | silicon carbide | wide-gap semiconductors | VAPOR-PHASE EPITAXY | PHYSICS, APPLIED | SEMIPOLAR DIRECTION | MOLECULAR-BEAM EPITAXY | ELECTRICAL-PROPERTIES | X-RAY-DIFFRACTION | STRUCTURAL-CHARACTERIZATION | SILICON-CARBIDE | GALLIUM NITRIDE | THIN-FILM | Silicon carbide | Synthesis | Semiconductors | Epitaxy | Silicon | Epitaxial growth | Lattice parameters | Carbon
Journal Article
Materials Physics and Mechanics, ISSN 1605-2730, 2016, Volume 29, Issue 1, pp. 82 - 92
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 01/2013, Volume 113, Issue 2, p. 24909
A new method is developed for the solid-phase synthesis of epitaxial layers when the substrate itself is involved into a chemical reaction and the reaction... 
POINT-DEFECTS | PHYSICS, APPLIED | Silicon compounds | Thermal properties | Usage | Nucleation | Stress-strain curves | Analysis | Elasticity | Mechanical properties | Phase transformations (Statistical physics) | Epitaxial layers | Silicon carbide | Dipoles | Semiconductors | Dilatation | Silicon substrates | Chemical reactions
Journal Article
Thin Solid Films, ISSN 0040-6090, 01/2018, Volume 646, pp. 158 - 162
The paper focuses on growth of GaN thin films via plasma assisted molecular beam epitaxy on SiC/Si(111) substrate formed by atom-by-atom substitution method. A... 
Buffer layer | Plasma-assisted molecular beam epitaxy | Silicon | Raman spectroscopy | Gallium nitride | Silicon nitride | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | CHEMICAL-VAPOR-DEPOSITION | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON-CARBIDE | RAMAN-SCATTERING | GROWTH | NITROGEN | SURFACE | ATOMS | STRAIN | MATERIALS SCIENCE, COATINGS & FILMS
Journal Article
Journal of Physics and Chemistry of Solids, ISSN 0022-3697, 03/2017, Volume 102, pp. 151 - 156
Journal Article
by Anashin, V.V and Anchugov, O.V and Aulchenko, V.M and Baldin, E.M and Baranov, G.N and Barladyan, A.K and Barnyakov, A.Yu and Barnyakov, M.Yu and Baru, S.E and Basok, I.Yu and Batrakov, A.M and Bekhtenev, E.A and Blinov, A.E and Blinov, V.E and Bobrov, A.V and Bobrovnikov, V.S and Bogomyagkov, A.V and Bondar, A.E and Buzykaev, A.R and Cheblakov, P.B and Dorohov, V.L and Eidelman, S.I and Grigoriev, D.N and Glukhov, S.A and Kaminskiy, V.V and Karnaev, S.E and Karpov, G.V and Karpov, S.V and Karukina, K.Yu and Kashtankin, D.P and Kasyanenko, P.V and Kharlamova, T.A and Kiselev, V.A and Kolmogorov, V.V and Kononov, S.A and Kotov, K.Yu and Krasnov, A.A and Kravchenko, E.A and Kudryavtsev, V.N and Kulikov, V.F and Kurkin, G.Ya and Kuyanov, I.A and Levichev, E.B and Maksimov, D.A and Malyshev, V.M and Maslennikov, A.L and Meshkov, O.I and Mishnev, S.I and Morozov, I.A and Morozov, I.I and Nikitin, S.A and Nikolaev, I.B and Okunev, I.N and Onuchin, A.P and Oreshkin, S.B and Osipov, A.A and Ovtin, I.V and Peleganchuk, S.V and Pivovarov, S.G and Piminov, P.A and Petrov, V.V and Prisekin, V.G and Rezanova, O.L and Ruban, A.A and Savinov, G.A and Shamov, A.G and Shatilov, D.N and Shvedov, D.A and Shwartz, B.A and Simonov, E.A and Sinyatkin, S.V and Skrinsky, A.N and Sokolov, A.V and Sukhanov, D.P and Sukharev, A.M and Starostina, E.V and Talyshev, A.A and Tayursky, V.A and Telnov, V.I and Tikhonov, Yu.A and Todyshev, K.Yu and Tribendis, A.G and Tumaikin, G.M and Usov, Yu.V and Vorobiov, A.I and Zhilich, V.N and Zhukov, A.A and Zhulanov, V.V and Zhuravlev, A.N
Physics Letters B, ISSN 0370-2693, 01/2019, Volume 788, p. 42
The present work continues a series of the KEDR measurements of the R value that started in 2010 at the VEPP-4M e.sup.+e.sup.- collider. By combining new data... 
Measurement | Detectors | Nuclear physics
Journal Article
Journal Article