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American Journal of Medical Genetics Part A, ISSN 1552-4825, 01/2018, Volume 176, Issue 1, pp. 171 - 174
Hypophosphatasia (HPP) is an autosomal recessive metabolic disorder with impaired bone mineralization due to mutations in the ALPL gene. The genotype-phenotype... 
hypophosphatasia | siblings | prenatal diagnosis | ultrasound | discordant phenotype | GENE | GENETICS & HEREDITY | MUTATIONS | Pregnancy | Analysis | Genetic aspects | Hypoplasia | Neonates | Vertebrae | Mandible | Spine | Fetuses | Thorax | Gestation | Hypophosphatasia | Genetic screening | Hereditary diseases | Radiography | Tibia | Mineralization | Ultrasonography | Skeleton | Umbilical cord | Mutation | Metabolic disorders | Siblings
Journal Article
Computer, ISSN 0018-9162, 06/2018, Volume 51, Issue 6, pp. 72 - 81
Journal Article
American Journal of Medical Genetics Part A, ISSN 1552-4825, 01/2018, Volume 176, Issue 1, pp. i - i
The cover image, by Satoru Ikenoue et al., is based on the Clinical Report Discordant fetal phenotype of hypophosphatasia in two siblings , DOI:... 
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2011, Volume 99, Issue 13, pp. 132907 - 132907-3
We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeN x / p -Ge fabricated by... 
Journal Article
Journal of Medical Case Reports, ISSN 1752-1947, 07/2017, Volume 11, Issue 1, pp. 207 - 3
Journal Article
RSC Advances, ISSN 2046-2069, 2016, Volume 6, Issue 23, pp. 19288 - 19297
BaZr0.8Y0.2O3-delta (BZY20) is a promising candidate as an electrolyte in protonic ceramic fuel cells (PCFCs), and nickel (Ni) is known to show good electrode... 
HIGH-PERFORMANCE | SYSTEM | FILMS | CERAMIC FUEL-CELLS | EQUILIBRIUM | SOFCS | CHEMISTRY, MULTIDISCIPLINARY
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 07/2011, Volume 110, Issue 2
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2011, Volume 99, Issue 13
We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeN{sub x}/p-Ge fabricated... 
NITRIDATION | TRAPS | ANNEALING | PASSIVATION | SUBSTRATES | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | GERMANIUM NITRIDES | MATERIALS SCIENCE | LAYERS | GERMANIUM | PLASMA | TEMPERATURE DEPENDENCE | INTERFACES | NITROGEN | ELECTRON CYCLOTRON-RESONANCE | SEMICONDUCTOR MATERIALS | VALENCE | FERMI LEVEL | SURFACES
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 07/2011, Volume 110, Issue 2, pp. 026108 - 026108-3
We report on the effects of postdeposition annealing ambient on the hysteresis observed in the C-V measurement of Al 2 O 3 /GeO 2 gate-dielectric stacks... 
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2011, Volume 99, Issue 2, pp. 022902 - 022902-3
We have investigated GeN x /Ge interface properties using Si 3 N 4 (7 nm)/GeN x (2 nm)/Ge metal-insulator-semiconductor structures fabricated by the plasma... 
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2010, Volume 57, Issue 1, pp. 282 - 287
We have fabricated an Al2O3/GeO2 gate-dielectric stack on p-type Ge by electron-cyclotron-resonance plasma oxidation and sputtering without external substrate... 
Germanium | Gate dielectrics | Germanium oxide | Aluminum oxide | germanium oxide | OXIDATION | IRRADIATION | ENERGY | PHYSICS, APPLIED | INTERFACE | gate dielectrics | DEPOSITION | germanium | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2011, Volume 99, Issue 2, p. 22902
We have investigated GeNx/Ge interface properties using Si3N4(7 nm)/GeNx(2 nm)/Ge metal-insulator-semiconductor structures fabricated by the plasma nitridation... 
PHYSICS, APPLIED | GE
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 09/2011, Volume 99, Issue 13, p. 132907
We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeNx/p-Ge fabricated by the... 
INTERFACE-TRAP DENSITY | valence bands | PHYSICS, APPLIED | passivation | germanium | annealing | metallisation | nitridation | elemental semiconductors | cyclotron resonance | plasma materials processing | Fermi level | interface states | germanium compounds | conduction bands | interface phenomena
Journal Article
Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics), ISSN 0302-9743, 2016, Volume 9442, pp. 99 - 110
Conference Proceeding
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