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basic electric elements (2) 2
electric solid state devices not otherwise provided for (2) 2
electricity (2) 2
semiconductor devices (2) 2
tungsten (2) 2
annealing (1) 1
capacitance (1) 1
capacitors (1) 1
chaos (1) 1
cleaning (1) 1
contact resistance (1) 1
copper (1) 1
degradation (1) 1
dielectrics (1) 1
etching (1) 1
leakage current (1) 1
metallization (1) 1
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12/2018
Halbleiterstruktur, aufweisend:mindestens einen FET-Gate-Stapel (18), welcher auf einer oberen Fläche eines Halbleitersubstrats (12) angeordnet ist, wobei... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
2009 IEEE International Interconnect Technology Conference, ISSN 2380-632X, 06/2009, pp. 8 - 10
We used Cu contact metallization to solve one of the critical challenges for 22 nm node technology. Cu contact metallization allowed us to demonstrate world's... 
Chaos | Annealing | Metallization | Tungsten | Capacitance | Contact resistance | Leakage current | Microelectronics | Copper | Thermal stresses
Conference Proceeding
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), ISSN 0163-1918, 2001, pp. 28.5.1 - 28.5.4
We have investigated the feasibility for volume production of high density DRAMs employing a polymetal gate stack(W/WNx/Poly-Si). Especially, based on the... 
Degradation | Capacitors | Random access memory | Tungsten | Production | Etching | Oxidation | Cleaning | Dielectrics | Research and development
Conference Proceeding
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