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IEEE Electron Device Letters, ISSN 0741-3106, 09/2019, Volume 40, Issue 9, pp. 1358 - 1361
The use of nonvolatile arbitrary logic functions through emerging nonvolatile memory devices has been proposed to implement in-memory computing architecture.... 
Performance evaluation | charge trap flash (CTF) | Nonvolatile memory | Microprocessors | Computer architecture | Logic functions | In-memory computing | 3D flash memory | SONOS flash memory | Transistors | Flash memories
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 04/2016, Volume 663, p. 256
In this paper, nonlinear and low-power resistive switching characteristics of Si.sub.3N.sub.4-based RRAM embedding SiO.sub.2 tunnel barrier (TB) with full... 
Complementary metal oxide semiconductors | Electric properties | Nitrides | Silicon | Silica
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 04/2016, Volume 663, pp. 256 - 261
In this paper, nonlinear and low-power resistive switching characteristics of Si sub(3)N sub(4)-based RRAM embedding SiO sub(2) tunnel barrier (TB) with full... 
Tunnels (transportation) | High density | Barriers | Nonlinearity | Selectivity | Arrays | Tuning | Silicon dioxide
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 04/2016, Volume 663, pp. 256 - 261
Journal Article
Current Applied Physics, ISSN 1567-1739, 02/2017, Volume 17, Issue 2, pp. 146 - 151
Journal Article
Current Applied Physics, ISSN 1567-1739, 02/2017, Volume 17, Issue 2, p. 146
In this paper, we report the effects of two different types of dopants (n- and p-type semiconductors) on the unipolar resistive switching characteristics of a... 
Silicon | Memory (Computers) | Complementary metal oxide semiconductors | Electric properties | Silicon compounds | Nitrides | Semiconductors
Journal Article
Nanoscale research letters, ISSN 1931-7573, 12/2016, Volume 11, Issue 1, p. 360
A study on the bipolar-resistive switching of an Ni/SiN/Si-based resistive random-access memory (RRAM) device shows that the influences of the reset power and... 
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2016, Volume 108, Issue 21, p. 212103
In this letter, we extensively investigate the nonlinear resistive switching characteristics of Si3N4-based resistive random access memory (RRAM) devices that... 
RANDOM-ACCESS MEMORY | PHYSICS, APPLIED | RRAM | MECHANISMS | LOW-POWER | BARRIER | Thickness | Memory devices | Ohmic | Barrier layers | Random access memory | Silicon nitride | Low resistance | Switching | Aluminum oxide
Journal Article
Journal of Nanoscience and Nanotechnology, ISSN 1533-4880, 10/2016, Volume 16, Issue 10, pp. 10247 - 10251
In this study, we examined the switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/Ti/HfO sub(2)/SiO sub(2)/p+Si structure and its... 
Trapping | Direct current | Hafnium oxide | Endurance | Nanostructure | Devices | Switching | Silicon dioxide
Journal Article
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, ISSN 2166-2746, 11/2015, Volume 33, Issue 6
Journal Article
Journal of Nanoscience and Nanotechnology, ISSN 1533-4880, 10/2017, Volume 17, Issue 10, p. 7231
In this study, we examine the reset switching behaviors of a bipolar resistive random-access memory (RRAM) system housed in a Ni/SiNx/p+ Si structure. Low... 
Resistance | Computer memory | Ohmic dissipation | Random access memory | Silicon | Heat transmission | Switching
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 04/2016, Volume 663, pp. 256 - 261
In this paper, nonlinear and low-power resistive switching characteristics of Si N -based RRAM embedding SiO tunnel barrier (TB) with full compatibility to... 
Silicon dioxide (SiO2) | Resistive random-access memory (RRAM) | Silicon nitride (Si3N4) | Tunnel barrier | Silicon nitride (Si | Silicon dioxide (SiO | THIN-FILMS | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | CHEMISTRY, PHYSICAL | RELIABILITY | RRAM | BIPOLAR | RANDOM-ACCESS MEMORY | DEVICES | SWITCHING BEHAVIOR
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 01/2017, Volume 50, Issue 2, p. 2
In this letter, we compare three different types of reset switching behavior in a bipolar resistive random-access memory (RRAM) system that is housed in a... 
gradual reset switching | multi-level cells | resistive switching | silicon nitride | Si | N | PHYSICS, APPLIED | PROTON-EXCHANGE REACTIONS | Si3N4 (silicon nitride) | LOW-POWER
Journal Article
Nanotechnology, ISSN 0957-4484, 09/2017, Volume 28, Issue 40, pp. 405202 - 405202
Brain-inspired neuromorphic systems have attracted much attention as new computing paradigms for power-efficient computation. Here, we report a silicon... 
spike-timing dependent plasticity (STDP) | spiking neural network | neuromorphic system | synaptic transistor | pattern recognition | PHYSICS, APPLIED | LONG-TERM-MEMORY | RECOGNITION | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | TRANSMISSION | SPATIAL SUMMATION | SYNAPSES
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2017, Volume 111, Issue 3
This letter studies the effect of the negative-set on the resistive switching performances of CMOS-compatible Ni/SiN x /p++-Si resistive memory devices by... 
Journal Article
Solid-State Electronics, ISSN 0038-1101, 12/2015, Volume 114, pp. 94 - 97
In this work, we report a gradual bipolar resistive switching memory device using Ni/Si 3 N 4 /n + -Si structure. Different reset transitions are observed... 
Gradual reset | Resistive switching | Space-charge-limited current (SCLC) | Multi-level cell (MLC) | Si 3 N 4 -based RRAM | Abrupt reset
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 08/2007, Volume 28, Issue 8, pp. 743 - 745
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2018, Volume 65, Issue 5, pp. 2010 - 2015
In this paper, a novel vertical-structured electron-hole bilayer tunnel field-effect transistor (V-EHBTFET), which features dual gates located at each side of... 
Performance evaluation | TFETs | subthreshold swing | Scalability | low-power operation (LOP) | tunnel FET (TFET) | Logic gates | Silicon | Electron-hole bilayer tunnel field-effect transistor (EHBTFET) | P-n junctions | steep switching | IMPACT | PHYSICS, APPLIED | FET | PERFORMANCE | DEVICE | SUBTHRESHOLD | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
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