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Nano Letters, ISSN 1530-6984, 12/2018, Volume 18, Issue 12, pp. 7715 - 7718
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 03/2017, Volume 50, Issue 13, p. 139701
Journal Article
Chemical Communications : Chem Comm, ISSN 1359-7345, 01/2019, Volume 55, Issue 60, pp. 8780 - 8783
Reported herein are tunneling and thermoelectric characteristics of large-area molecular junctions formed with N-heterocyclic carbene (NHC)-based... 
Gold | Self assembly | Self-assembled monolayers | Thermoelectricity
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 05/2016, Volume 49, Issue 18, p. 185104
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 05/2016, Volume 49, Issue 18, pp. 185104 - 185109
In most ferroelectric field-effect transistors (FeFETs), a thin interfacial layer is inserted between the ferroelectric and semiconductor in order to avoid the... 
Ferroelectricity | Impurities | Semiconductors | Interdiffusion | Leakage current | Lead (metal) | Gates | Lead zirconate titanates
Journal Article
Thin Solid Films, ISSN 0040-6090, 08/2015, Volume 589, pp. 735 - 740
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 09/2015, Volume 36, Issue 9, pp. 920 - 922
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 11/2017, Volume 122, Issue 17, p. 179901
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 10/2015, Volume 36, Issue 10, pp. 1033 - 1036
  A novel metal-ferroelectric-insulator-silicon (MFIS) field-effect transistor (FET) with a Pt/Pb(Zr,Ti)O3 (PZT)/ ZrTiO4 (ZTO)/p-Si structure was fabricated... 
Pb(Zr,Ti)O | ZrTiO | Metal-ferroelectric-insulator-silicon field-effect transistor (MFIS-FET) | nonvolatile memory
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2016, Volume 108, Issue 10, p. 103504
A reliable on/off switching with an sub-kT/q subthreshold slope (38 mV/dec at room temperature) is experimentally demonstrated with using selectively nucleated... 
Journal Article
Fuel, ISSN 0016-2361, 05/2017, Volume 196, p. 371
Co-utilization of coal and biomass in a power plant can reduce the overall CO2 emission by partly displacing fossil-fuel combustion with near-carbon-neutral... 
Viscosity | Fuel combustion | Cold gas | Fluid dynamics | Wood | Computational fluid dynamics | Biomass burning | Carbon dioxide | Hydrodynamics | Combustion | Biomass | Electric power generation | Coal gasification | Calorific value | Coal | Computer applications | Slag | Gasification | Mathematical models | Sawdust | Power plants
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 06/2016, Volume 63, Issue 6, p. 2391
  In this paper, we investigated the electrical properties of a metal-induced laterally crystallized (MILC) p-type low-temperature polycrystalline-silicon... 
Silicon
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 06/2016, Volume 63, Issue 6, pp. 2391 - 2397
In this paper, we investigated the electrical properties of a metal-induced laterally crystallized (MILC) p-type low-temperature polycrystalline-silicon... 
Stresses | Equivalence | Electrical properties | Dielectric properties | Crystallization | Dielectrics | Devices | Gates
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 06/2016, Volume 63, Issue 6, p. 2391
Journal Article
Evidence-based Complementary and Alternative Medicine, ISSN 1741-427X, 2018, Volume 2018, pp. 2308102 - 9
Acupoint GB21 (Jianjing) is used for treating back and shoulder pain but is associated with a risk of pneumothorax. We aimed to determine the SND (safe... 
ACUPUNCTURE | INTEGRATIVE & COMPLEMENTARY MEDICINE | Inspiration | Pneumothorax | Research & development--R&D | Legal medicine | Body weight | Prone position | Expiration | Systematic review | Sitting position | Family medical history | Variance analysis | Posture | Image acquisition | Studies | Ultrasonic imaging | Pain | Body mass | Alternative medicine | Acupuncture | Breathing | Respiration
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 03/2016, Volume 119, Issue 12
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 04/2016, Volume 49, Issue 18
In most ferroelectric field-effect transistors (FeFETs), a thin interfacial layer is inserted between the ferroelectric and semiconductor in order to avoid the... 
ferroelectric field-effect transistor | ZrTiO | buffer layer | metal-ferroelectric-insulator-semiconductor capacitor | ZrTiO4 | PHYSICS, APPLIED | FILMS | FET | GRAIN-GROWTH | FIELD-EFFECT TRANSISTORS | MEMORY APPLICATIONS
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2016, Volume 37, Issue 6, pp. 809 - 809
In the above paper, there was some wrong information in the experiment section. Some of the thickness and processing temperature needs to be corrected. For... 
Semiconductor device manufacture | Fatigue | Zirconium compounds | Titanium compounds | Field effect transistors | Crystallization
Journal Article
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