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Progress in Quantum Electronics, ISSN 0079-6727, 07/2016, Volume 48, pp. 1 - 56
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 03/2015, Volume 117, Issue 12, p. 124303
The intersublevel absorption peak energy and absorption coefficient of non-uniform quantum dot (QD) ensembles are calculated analytically. The effect of size... 
PHYSICS, APPLIED | SPECTRA | INFRARED PHOTODETECTORS | OPTOELECTRONIC DEVICES | PROGRESS | GROWTH | Research | Quantum dots | Quantum wells | Analysis | Band theory (Physics) | VARIATIONS | GAUSS FUNCTION | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | GALLIUM ARSENIDES | ABSORPTION | POTENTIALS | ASPECT RATIO | SEMICONDUCTOR MATERIALS | QUANTUM DOTS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2010, Volume 96, Issue 23, pp. 231103 - 231103-3
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 05/2016, Volume 108, Issue 20
We report the performance of a 30 period p-GaAs/AlxGa1-xAs heterojunction photovoltaic infrared detector, with graded barriers, operating in the 2-6 mu m... 
QUANTUM-WELL | PHYSICS, APPLIED | PHOTODETECTORS | TEMPERATURE OPERATION | LAYER
Journal Article
Infrared Physics and Technology, ISSN 1350-4495, 03/2019, Volume 97, pp. 33 - 37
Established diagnostic regimens for inflammatory bowel diseases, such as colonoscopy, sigmoidoscopy, and small bowel follow-through have high sensitivity, but... 
Longitudinal analysis | Serum | Colitis | Mouse models | Infrared ATR spectroscopy | INSTRUMENTS & INSTRUMENTATION | PHYSICS, APPLIED | INFLAMMATORY-BOWEL-DISEASE | OPTICS
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 11/2012, Volume 86, Issue 19
The temperature-dependent characteristic of band offsets at the heterojunction interface was studied by an internal photoemission (IPE) method. In contrast to... 
OFFSETS | PHYSICS, CONDENSED MATTER | INTERFACE | HETEROJUNCTIONS | VALENCE-BAND | CADMIUM TELLURIDE | HETEROSTRUCTURES | SPIN INJECTION | MAGNETIC SEMICONDUCTORS | MODEL | GAAS
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 10/2011, Volume 99, Issue 18, p. 181102
A high-performance InGaAs/GaAs vertical quantum dot infrared photodetector (QDIP) with combined barrier of quaternary In0.21Al0.21Ga0.58As and GaAs was... 
A-WELL DETECTOR | ROOM-TEMPERATURE | PHYSICS, APPLIED | WAVELENGTH | HIGH-TEMPERATURE OPERATION | LARGE RESPONSIVITY | FOCAL-PLANE ARRAY | HIGH DETECTIVITY
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2018, Volume 113, Issue 1
Middle wavelength infrared (MWIR) photodetectors have a wide range of applications, but almost all of them operate at low temperature due to the limit of... 
HOLES | PHYSICS, APPLIED | SUBWAVELENGTH OPTICS | LIGHT
Journal Article
Optics Letters, ISSN 0146-9592, 10/2012, Volume 37, Issue 20, pp. 4302 - 4304
Oblique-angle deposited titanium dioxide (TiO2) nanorods have attracted much attention as good antireflection (AR) coating material due to their low n profile.... 
LOW-REFRACTIVE-INDEX | REFLECTION | OPTICS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2005, Volume 86, Issue 19, pp. 191106 - 191106-3
We report high-temperature ( 240 - 300 K ) operation of a tunneling quantum-dot infrared photodetector. The device displays two-color characteristics with... 
A-WELL DETECTOR | HIGH-RESPONSIVITY | PHYSICS, APPLIED | DETECTIVITY
Journal Article
Infrared Physics and Technology, ISSN 1350-4495, 12/2018, Volume 95, pp. 148 - 151
The III-V semiconductor heterostructure-based photodetectors have been studied extensively for infrared detection, from near-infrared (NIR) to far-infrared... 
Extended wavelength photoresponse | GaAs/AlGaAs heterostructure | Infrared photodetector | INSTRUMENTS & INSTRUMENTATION | PHYSICS, APPLIED | GaAs/AIGaAs heterostructure | OPTICS | Electrical engineering | Analysis | Detectors
Journal Article
Optics Letters, ISSN 0146-9592, 10/2012, Volume 37, Issue 20, pp. 4302 - 4304
Oblique-angle deposited titanium dioxide (TiO2) nanorods have attracted much attention as good antireflection (AR) coating material due to their low n profile.... 
Infrared detectors | Infrared | Optical properties | Coating | Titanium dioxide | Nanorods | Optimization | Incidence
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 07/2017, Volume 122, Issue 2, p. 24501
The dark current and spectral photoresponse thresholds of a semiconductor photodetector are normally determined by the minimum energy gap (Δ) of the material,... 
HOT-CARRIER PHOTODETECTION | DETECTORS | PHYSICS, APPLIED | QUANTUM WIRES | ABSORPTION | DOPED-GAAS | Dark current | Photodetectors | Research | Gallium compounds | Electric properties
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2012, Volume 101, Issue 26, p. 261114
An InAs/GaAs quantum dot infrared photodetector with strong, multicolor, broadband (5-20 mu m) photoresponse is reported. Using a combined quaternary... 
OPTICAL-PROPERTIES | 8-BAND | PHYSICS, APPLIED | TEMPERATURE | Gallium arsenides | Broadband | Infrared | Quantum dots | Gallium arsenide | Photodetectors | Indium arsenides | Strain
Journal Article
Inorganica Chimica Acta, ISSN 0020-1693, 02/2008, Volume 361, Issue 3, pp. 707 - 711
In Gratzel's cell, the electrons injected by the photo-excitation of dye molecules, anchored to a mesoporous TiO film, efficiently diffuse to the back contact... 
Dye-sensitization | ZnO | 1/f noise | TiO | Trap levels | SnO | RECOMBINATION | trap levels | OXIDE | CONVERSION | SLOW | TIO2 FILMS | CHEMISTRY, INORGANIC & NUCLEAR | SENSITIZED SOLAR-CELLS | dye-sensitization | SURFACE | SnO2 | DEVICES | EFFICIENCY | TiO2
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2009, Volume 94, Issue 10, pp. 101115 - 101115-3
The electronic properties of InAs/GaAs quantum rings and the characteristics of resonant tunnel intersubband terahertz detectors with quantum ring active... 
gallium arsenide | DOT INFRARED PHOTODETECTOR | PHYSICS, APPLIED | dark conductivity | indium compounds | current density | semiconductor quantum dots | terahertz wave detectors | III-V semiconductors | resonant tunnelling
Journal Article
Optical Engineering, ISSN 0091-3286, 9/2017, Volume 56, Issue 9, pp. 091605 - 091605
Extension of the wavelength threshold of an infrared detector beyond λt=hc/Δ is demonstrated, without reducing the minimum energy gap (Δ) of the material.... 
extended wavelength | As heterostructures | hot carrier | GaAs/Al | Infrared detector | SPECTRAL LIMIT | DETECTORS | GaAs/AlxGa1-xAs heterostructures | infrared detector | ABSORPTION | OPTICS
Journal Article
Nature Photonics, ISSN 1749-4885, 2014, Volume 8, Issue 5, pp. 412 - 418
The spectral response of common optoelectronic photodetectors is restricted by a cutoff wavelength limit lambda(c) that is related to the activation energy (or... 
DETECTORS | PHYSICS, APPLIED | SEMICONDUCTOR | RELAXATION PROCESSES | SPECTROSCOPY | INFRARED PHOTODETECTORS | GRAPHENE | HOLES | P-TYPE GERMANIUM | OPTICS | GAAS | Carriers | Band spectra | Aluminum gallium arsenides | Wavelengths | Semiconductors | Gallium arsenide | Photodetectors | Spectra
Journal Article
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 12/2011, Volume 110, Issue 11
Journal Article
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