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Applied Physics A, ISSN 0947-8396, 5/2019, Volume 125, Issue 5, pp. 1 - 10
Journal Article
JOURNAL OF ELECTRONIC MATERIALS, ISSN 0361-5235, 06/2019, Volume 48, Issue 6, pp. 4107 - 4116
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 04/2013, Volume 60, Issue 4, pp. 1404 - 1411
Journal Article
JOURNAL OF ELECTRONIC MATERIALS, ISSN 0361-5235, 06/2019, Volume 48, Issue 6, pp. 3871 - 3880
Journal Article
Applied Physics A: Materials Science & Processing, ISSN 0947-8396, 05/2019, Volume 125, Issue 5, p. 1
The temperature and carrier-trapping effects on the electrical characteristics of a 4H silicon carbide (4H-SiC) metal--oxide--semiconductor field effect... 
Circuit components | Metal oxide semiconductor field effect transistors | Services | Silicon carbide | Wireless communication systems | Analysis | Electric properties
Journal Article
IEEE Transactions on Power Electronics, ISSN 0885-8993, 10/2011, Volume 26, Issue 10, pp. 2835 - 2843
Journal Article
Optik, ISSN 0030-4026, 06/2018, Volume 163, pp. 22 - 32
The insertion of optimized Window and a back surface field (BSF) layers on an p-n basic single junction (BSJ) solar cell is the chief reason behind the... 
Solar cell | InGaN | Window layer | BSF layer | Simulation | Silvaco | GAP | OPTICS
Journal Article
Journal of Electronic Materials, ISSN 0361-5235, 2019, Volume 48, Issue 6, pp. 3692 - 3698
The current-voltage (I-V) characteristics of inhomogeneous Au/n-InP Schottky barrier (SB) diodes have been investigated in the temperature range of 100K to... 
patch area | barrier height | numerical simulation | Schottky diode | PHYSICS, APPLIED | PERFORMANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | AL | GAAS | ENGINEERING, ELECTRICAL & ELECTRONIC | TRANSPORT | ELECTRICAL CHARACTERISTICS | INTERFACE | DEPENDENT CURRENT-VOLTAGE | CURRENT-VOLTAGE CHARACTERISTICS | Analysis | Models | Numerical analysis
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 2017, Volume 56, Issue 9, p. 94301
In this paper, using a numerical simulator, we investigated the current-voltage characteristics of a Pt/n-GaN thin Schottky diode on the basis of the... 
PHYSICS, APPLIED
Journal Article
SUPERLATTICES AND MICROSTRUCTURES, ISSN 0749-6036, 06/2019, Volume 130, pp. 377 - 389
In this paper indium gallium nitride (InGaN) is used to design and optimize a dual junction (DJ) solar cell, which is series-connected via a tunnel diode, with... 
Current matching | RECOMBINATION | PHYSICS, CONDENSED MATTER | DESIGN | Dual cell | PERFORMANCE | 2-JUNCTION | GAP | InGaN | Numerical simulation | Tunnel junction | NUMERICAL-SIMULATION
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 07/2015, Volume 36, Issue 7, pp. 720 - 722
A high-performance temperature sensor based on coupled 4H-SiC Schottky diodes is presented. The linear dependence on temperature of the difference between the... 
Temperature sensors | Temperature measurement | Schottky diodes | Temperature distribution | Semiconductor device measurement | Sensitivity | Silicon carbide | Wide band gap semiconductors | wide band gap semiconductors | temperature sensors | silicon carbide | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 01/2019, Volume 58, Issue 1, p. 14002
The current-voltage characteristics of Al/Ti/4H-SiC Schottky barrier diodes have been investigated in the 85-445 K temperature range by means of a combined... 
RECOMBINATION | EXTRACTION | TRANSPORT | PHYSICS, APPLIED | PERFORMANCE | INHOMOGENEITIES | I-N-DIODES | PARAMETERS | MODEL | Temperature dependence | Schottky diodes | Computer simulation | Aluminum | Gaussian distribution | Field emission | Current voltage characteristics | Simulation | Thermionic emission | Normal distribution | Barriers | Organic light emitting diodes | Titanium
Journal Article
Solid State Electronics, ISSN 0038-1101, 11/2019, Volume 161, p. 107642
In this paper we investigate the optimized design of a short channel gate-all-around-junctionless (GAAJ) metal-oxidesemiconductor field-effect-transistor... 
Cut-off frequency | Short channel | Drain current | Series resistance | GAAJ MOSFET | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | SOLAR-CELLS | PERFORMANCE | SIMULATION | ENGINEERING, ELECTRICAL & ELECTRONIC | TRANSISTORS | STEADY-STATE | DIODES
Journal Article
Superlattices and Microstructures, ISSN 0749-6036, 10/2018, Volume 122, pp. 57 - 73
In this paper, a two-dimensional (2D) numerical simulation study of a p -n-n AlGaN-based ultraviolet (UV) photodetector, which is designed to achieve true... 
Spectral response | Numerical simulation | Photodetector | Trap density | AlGaN | PHYSICS, CONDENSED MATTER | BLIND PHOTODETECTORS | PERFORMANCE | ALPHA | HIGH QUANTUM EFFICIENCY | I-N-DIODES | LIGHT-EMITTING-DIODES | SCHOTTKY-BARRIER DETECTORS | GAN | Numerical analysis | Blindness | Detectors
Journal Article
Solid State Electronics, ISSN 0038-1101, 07/2015, Volume 109, pp. 12 - 16
In this work different experimental current–voltage behaviours of several Al implanted 4H-SiC p–i–n diodes are investigated by means of numerical simulations... 
p–i–n diode | Silicon carbide | Carrier lifetime | Device simulation | p-i-n diode | TEMPERATURE-COEFFICIENT | SIC DEVICES | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | SIMULATION | ENGINEERING, ELECTRICAL & ELECTRONIC | Circuit components | Analysis
Journal Article
Optik, ISSN 0030-4026, 04/2019, Volume 182, pp. 682 - 693
In this paper, we present an analytical study of the impact of light trapping and multilayer antireflection coating (ARC) on the electrical characteristics of... 
Conversion efficiency | GWO approach | Surface texture | Interfacial defects | Antireflection coating | SINGLE | PERFORMANCE | SILICON | MODEL | SIMULATION | OPTIMIZATION | OPTICS | CRYSTALLINE | LAYER
Journal Article
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