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Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, 06/2019, Volume 53, Issue 6, pp. 806 - 813
Journal Article
SEMICONDUCTORS, ISSN 1063-7826, 05/2020, Volume 54, Issue 5, pp. 529 - 533
Experimental studies of n(+)-GaAs/n(0)-GaAs/n(+)-GaAs isotype heterostructures with a 100-nm-thick wide-gap N-0-AlGaAs barrier situated in the n(0... 
impact ionization | PHYSICS, CONDENSED MATTER | isotype heterostructure | transport in heterostructures | AlGaAs | energy-balance model | GaAs
Journal Article
Semiconductors, ISSN 1063-7826, 6/2019, Volume 53, Issue 6, pp. 806 - 813
The current–voltage characteristics of n +-GaAs/n 0-GaAs/N 0-AlGaAs/N +-AlGaAs/n +-GaAs isotype heterostructures and n... 
Physics | Magnetism, Magnetic Materials | Physics, general
Journal Article
SEMICONDUCTORS, ISSN 1063-7826, 06/2019, Volume 53, Issue 6, pp. 806 - 813
The current-voltage characteristics of n(+)-GaAs/n(0)-GaAs/N-0-AlGaAs/N+-AlGaAs/n(+)-GaAs isotype heterostructures and n... 
PHYSICS, CONDENSED MATTER | LASERS | MODEL | SATURATION | BREAKDOWN
Journal Article
Semiconductor science and technology, ISSN 1361-6641, 2019, Volume 34, Issue 9, p. 095019
...) semiconductor heterostructures, fabricated by the MOCVD technique, on the modulation of the refractive index and the optical absorption by the field of the reverse-biased p-n junction were carried... 
PHYSICS, CONDENSED MATTER | refractive index modulation | coupled quantum wells | quantum-confined Stark effect | WELL | MATERIALS SCIENCE, MULTIDISCIPLINARY | waveguide phase modulator | ABSORPTION | ELECTROREFRACTION | HIGH-SPEED | absorption spectra | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, 05/2020, Volume 54, Issue 5, pp. 529 - 533
Journal Article
Semiconductors, ISSN 1063-7826, 6/2019, Volume 53, Issue 6, pp. 828 - 832
.../GaAs Heterostructures for High-Power Semiconductor Lasers A. A. Podoskin a, *, D. N. Romanovich a , I. S. Shashkin a , P . S. Gavrina a , Z. N. Sokolova a , S. O... 
Physics | Magnetism, Magnetic Materials | Physics, general | PHYSICS, CONDENSED MATTER | Lasers
Journal Article
Semiconductors (Woodbury, N.Y.), ISSN 1090-6479, 2015, Volume 49, Issue 10, pp. 1383 - 1387
... Films Deposited by Reactive Ionnulllasma Sputtering N. A. Bert, A. D. Bondarev, V. V. Zolotarev, D. A. Kirilenko, Ya. V. Lubyanskiy, A. V. Lyutetskiy, S. O... 
Physics | Magnetism, Magnetic Materials | Physics, general | PHYSICS, CONDENSED MATTER | Aluminum compounds | Nitrides | Coatings | Lasers | ALUMINIUM | TRANSMISSION ELECTRON MICROSCOPY | ILLUMINANCE | ALUMINIUM NITRIDES | MATERIALS SCIENCE | CONCENTRATION RATIO | OXYGEN | FILMS | PLASMA | REFRACTIVE INDEX | SEMICONDUCTOR LASERS | SPUTTERING | COATINGS | SILICA | ALUMINIUM OXIDES | ELLIPSOMETRY | DIELECTRIC MATERIALS | SILICON OXIDES
Journal Article
Semiconductors (Woodbury, N.Y.), ISSN 1090-6479, 2018, Volume 52, Issue 2, pp. 184 - 188
.... Bondarev a , I. P . Soshnikov a, b, c *, N. A. Bert a , V. V. Zolotarev a , D. A. Kirilenko a , K. P . Kotlyar b , N. A. Pikhtin a , and I. S. Tarasov a† a Ioffe... 
Physics | Magnetism, Magnetic Materials | Physics, general | THIN-FILMS | PHYSICS, CONDENSED MATTER | ALN | MOLECULAR-BEAM EPITAXY | GROWTH | OPTICAL-PROPERTIES | SURFACE | Nitrides | Gallium nitrate | Electronics industry | Gallium arsenide | Lasers | Aluminum compounds | Silicon
Journal Article
Semiconductors, ISSN 1063-7826, 07/2017, Volume 51, Issue 7, pp. 959 - 964
The operating characteristics of semiconductor quantum-well lasers, calculated with consideration for an increase in the internal optical loss in the waveguide... 
SEMICONDUCTOR-LASERS | PHYSICS, CONDENSED MATTER | CONFINED ACTIVE-REGION | LIGHT-CURRENT CHARACTERISTICS | CAPTURE VELOCITY | THRESHOLD CHARACTERISTICS | DOT LASER | WAVE-GUIDE | SATURATION | Waveguides | Semiconductors | Lasers | Statistics | Quantum wells | QUANTUM WELLS | LOSSES | LASERS | MATERIALS SCIENCE | PUMPS | SEMICONDUCTOR MATERIALS
Journal Article
Electronics Letters, ISSN 0013-5194, 5/2015, Volume 51, Issue 10, pp. 780 - 782
A simple method for the determination of the capture velocity of charge carriers from a three-dimensional (3D) region (waveguide region) into a 2D region... 
Photonics | POWER | LIGHT-CURRENT CHARACTERISTICS | MU-M | ELECTRONS | SATURATION | ENGINEERING, ELECTRICAL & ELECTRONIC | Threshold currents | Multilayers | Semiconductor lasers | Charge carriers | Lasers | Quantum wells | Two dimensional | Three dimensional
Journal Article
Semiconductors, ISSN 1063-7826, 10/2016, Volume 50, Issue 10, pp. 1299 - 1303
... . Babichev a, b , A. Bousseksou c , N. A. Pikhtin d , I. S. Tarasov d , E. V. Nikitina e , A. N. Sofronov f , D. A. Firsov f , L. E. Vorobjev f , I. I. Novikov a, d , L... 
Physics | Magnetism, Magnetic Materials | Physics, general | ALUMINIUM ARSENIDES | LASERS | MOLECULAR BEAM EPITAXY | HETEROJUNCTIONS | CURRENT DENSITY | GALLIUM ARSENIDES | INDIUM ARSENIDES | MOLECULAR BEAMS | OPTIMIZATION | MATERIALS SCIENCE | THRESHOLD CURRENT | TEMPERATURE RANGE 0273-0400 K
Journal Article
Physics of the Solid State, ISSN 1063-7834, 11/2018, Volume 60, Issue 11, pp. 2291 - 2294
Abstract—In this paper, we present studies of the characteristics of quantum-cascade lasers with a generation wavelength in the region of 8 μm at high... 
Solid State Physics | Physics | LASER RADIATION | TEMPERATURE DEPENDENCE | WAVELENGTHS | COMPETITION | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | THRESHOLD CURRENT | EFFICIENCY
Journal Article
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