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2007, 1. Aufl., ISBN 9783527406678, xxi, 496
This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its... 
Semiconductors | Nitrides
Book
2003, ISBN 0125571909, xv, 279
Optoelectronics has become an important part of our lives. Wherever light is used to transmit information, tiny semiconductor devices are needed to transfer... 
Semiconductors | Optoelectronic devices
Book
09/2017, Series in optics and optoelectronics, ISBN 9781498749565, Volume 27, 797
Optoelectronic devices are now ubiquitous in our daily lives, from light emitting diodes (LEDs) in many household appliances to solar cells for energy. This... 
Solar cells | Optoelectronic devices | Nanostructures | Semiconductors | Modulators (Electronics)
eBook
physica status solidi (a), ISSN 1862-6300, 10/2010, Volume 207, Issue 10, pp. 2217 - 2225
Nitride‐based light‐emitting diodes (LEDs) suffer from a reduction (droop) of the internal quantum efficiency with increasing injection current. This droop... 
quantum efficiency | light‐emitting diodes | efficiency droop | GaN | Auger recombination | Efficiency droop | Quantum efficiency | Light-emitting diodes | RECOMBINATION | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | ELECTRONS | FIELD | MATERIALS SCIENCE, MULTIDISCIPLINARY | light-emitting diodes | LEDS | HIGH-POWER | SIMULATION | ORIGIN | LUMINESCENCE | POLARIZATION
Journal Article
IEEE Journal of Quantum Electronics, ISSN 0018-9197, 02/2017, Volume 53, Issue 1, pp. 1 - 4
Blue light emitting InGaN/GaN lasers currently exhibit less than 40% wall-plug efficiency, while infrared InGaAs/GaAs laser diodes exceed 70%. This paper... 
Temperature measurement | Resistance | Absorption | Semiconductor lasers | Measurement by laser beam | Radiative recombination | numerical analysis | Threshold current | Energy efficiency | Chemical properties | Gallium nitrate | Analysis | Electric properties
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2015, Volume 107, Issue 3, p. 31101
GaN-based light-emitting diodes (LEDs) exhibit a strong efficiency droop with higher current injection, which has been mainly attributed to Auger recombination... 
NITRIDE | TRANSPORT | PHYSICS, APPLIED | QUANTUM WELLS | RECOMBINATION | TEMPERATURE DEPENDENCE | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | LIGHT EMITTING DIODES | AMBIENT TEMPERATURE | EFFICIENCY | COMPUTERIZED SIMULATION | GALLIUM NITRIDES
Journal Article
2018, 1, ISBN 9781498749565, Volume 2, 886
Optoelectronic devices are now ubiquitous in our daily lives, from light emitting diodes (LEDs) in many household appliances to solar cells for energy. This... 
Electromagnetics & Microwaves | Optics & optoelectronics
eBook
Applied Physics Letters, ISSN 0003-6951, 2014, Volume 104, Issue 5, p. 51118
Journal Article
2018, 1, ISBN 9781498749466, Volume 1, 834
Optoelectronic devices are now ubiquitous in our daily lives, from light emitting diodes (LEDs) in many household appliances to solar cells for energy. This... 
Electromagnetics & Microwaves | Optics & optoelectronics
eBook
ECS Journal of Solid State Science and Technology, ISSN 2162-8769, 2020, Volume 9, Issue 1, p. 15008
Journal Article
Optical and Quantum Electronics, ISSN 0306-8919, 2/2019, Volume 51, Issue 2, pp. 1 - 10
Journal Article
IEEE Photonics Technology Letters, ISSN 1041-1135, 05/2013, Volume 25, Issue 10, pp. 958 - 960
High-power broad-area laser diodes often suffer from a widening of the lateral far-field with increasing current (slow-axis far-field blooming). This effect... 
Self-focusing | Semiconductor lasers | semiconductor laser | Air gaps | semiconductor device modeling | thermo-optic effects | Thermal lensing | Laser modes | Diode lasers | Lenses | PHYSICS, APPLIED | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2014, Volume 105, Issue 1, p. 11116
This Letter investigates the output power enhancement achieved by tunnel junction insertion into the InGaN multi-quantum well (MQW) active region of a 410 nm... 
PHYSICS, APPLIED | SURFACE-EMITTING LASERS | DIODE | EFFICIENCY | LASER RADIATION | QUANTUM WELLS | P-N JUNCTIONS | RECYCLING | DISTRIBUTION | HEATING | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | CAVITY RESONATORS | CARRIERS | ABSORPTION | TUNNEL EFFECT | VISIBLE RADIATION | THERMAL CONDUCTIVITY | GALLIUM NITRIDES | SURFACES
Journal Article
Optical and Quantum Electronics, ISSN 0306-8919, 10/2017, Volume 49, Issue 10, pp. 1 - 8
Journal Article
Optical and Quantum Electronics, ISSN 0306-8919, 10/2016, Volume 48, Issue 10, pp. 1 - 8
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2017, Volume 10098
Conference Proceeding
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2012, Volume 8262
The development and application of nitride-based light-emitting diodes (LEDs) is hindered by the low hole conductivity of Mg-doped layers. As an alternative,... 
efficiency | polarization charges | compositional grading | electron leakage | hole injection | gallium nitride | light-emitting diode | p-doping | Auger recombination | numerical simulation | AlGaN | Polarization | Computer simulation | Doping | Field ionization | Mathematical models | Magnesium | Devices | Augers
Conference Proceeding
physica status solidi (RRL) – Rapid Research Letters, ISSN 1862-6254, 05/2014, Volume 8, Issue 5, pp. 424 - 426
Journal Article
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