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1978, 2nd ed., International series in solid state physics, ISBN 008021651X, Volume 6., xvii, 237
Book
1988, 2nd ed., ISBN 9780198593362, xiii, 252
Book
1969, Reprinted with corrections 1976. --, International series in solid state physics, ISBN 9780080134697, Volume 6, xvi, 228
Book
Journal Article
Autophagy, ISSN 1554-8627, 05/2018, Volume 14, Issue 5, pp. 862 - 879
The macroautophagy/autophagy and inflammasome pathways are linked through their roles in innate immunity and chronic inflammatory disease. Ceramide-1-phosphate... 
inflammasome activation | sphingolipid rheostat | pyroptosis | cytokine release | autophagy | ceramide-1-phosphate | autophagosome induction | sphingolipid transfer proteins | sphingolipids | ceramide-1-phosphate transfer protein | EARLY STEPS | MAMMALIAN AUTOPHAGY | TRAFFICKING | MECHANISMS | MTOR | CELL-DEATH | CELL BIOLOGY | CERAMIDE 1-PHOSPHATE | SPHINGOSINE-1-PHOSPHATE | ATG9 | IN-SITU
Journal Article
Atmospheric Measurement Techniques, ISSN 1867-1381, 2014, Volume 7, Issue 2, pp. 469 - 490
The International Halocarbons in Air Comparison Experiment (IHALACE) was conducted to document relationships between calibration scales among various... 
NITROUS-OXIDE | GASES | CALIBRATION | ATLANTIC-OCEAN | AMBIENT AIR | TROPOSPHERE | INTERCOMPARISON EXPERIMENT NOMHICE | STRATOSPHERE | METEOROLOGY & ATMOSPHERIC SCIENCES | CH4 | DRY AIR
Journal Article
Atmospheric Measurement Techniques Discussions, ISSN 1867-8610, 08/2013, Volume 6, Issue 4, pp. 8021 - 8069
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 1991, Volume 69, Issue 10, pp. 7142 - 7145
Measurements have been made of the Richardson constant (A**) for Al/GaAs Schottky diodes in which the aluminum is deposited epitaxially by molecular beam... 
PHYSICS, APPLIED
Journal Article
Applied Physics Letters, ISSN 0003-6951, 1991, Volume 58, Issue 2, pp. 155 - 157
Admittance measurements have been made under forward bias on two types of Al/n-GaAs contacts. The Al and n-GaAs layers have been prepared by molecular beam... 
BARRIER HEIGHT | STATES | PHYSICS, APPLIED | MOLECULAR-BEAM EPITAXY | JUNCTIONS | METAL-SEMICONDUCTOR INTERFACES | DIODES | GAAS | CAPACITANCE | DEPENDENCE
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 1986, Volume 59, Issue 9, pp. 3189 - 3195
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 10/1971, Volume 4, Issue 10, pp. 1589 - 1601
Journal Article
JOURNAL OF PHYSICS D-APPLIED PHYSICS, ISSN 0022-3727, 1971, Volume 4, Issue 10, pp. 1589 - 1589
Journal Article
J. Appl. Phys, ISSN 0021-8979, 10/1986, Volume 60, Issue 7, pp. 2439 - 2444
The effects of the quality of the vacuum on the epitaxy of Al on (100)GaAs have been investigated. It was found that leaving the ion gauge running during the... 
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 01/1986, Volume 59, Issue 9, pp. 3189 - 3195
The effect of annealing on the electrical characteristics of epitaxial aluminum/gallium arsenide Schottky barriers prepared by molecular-beam epitaxy has been... 
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 1986, Volume 60, Issue 7, pp. 2439 - 2444
Journal Article
Nature, ISSN 0028-0836, 09/1976, Volume 263, Issue 5574, pp. 263 - 263
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 02/1992, Volume 7, Issue 2, pp. 218 - 221
Careful measurements have been made of the temperature coefficient of the barrier height (alpha) and of the Richardson constant (A**) for Schottky diodes... 
PHYSICS, CONDENSED MATTER | MATERIALS SCIENCE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
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