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Materials, ISSN 1996-1944, 2019, Volume 12, Issue 10, p. 1599
Today, the introduction of wide band gap (WBG) semiconductors in power electronics has become mandatory to improve the energy efficiency of devices and modules... 
HIGH-THRESHOLD-VOLTAGE | AL2O3/GAN MOSFET | INSTABILITY | PERFORMANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | MODE | RELIABILITY | normally-off HEMT | power electronics | ALGAN/GAN HEMTS | INTERFACE | gallium nitride | GATE METAL | TECHNOLOGY
Journal Article
Beilstein Journal of Nanotechnology, ISSN 2190-4286, 2017, Volume 8, Issue 1, pp. 254 - 263
Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several... 
MoS | Mobility | Temperature dependence | Contact resistance | Threshold voltage | DENSITY | mobility | PHYSICS, APPLIED | contact resistance | MoS2 | threshold voltage | HYSTERESIS | MATERIALS SCIENCE, MULTIDISCIPLINARY | temperature dependence | NANOSCIENCE & NANOTECHNOLOGY | METAL | FIELD-EFFECT TRANSISTORS | Field effect transistors
Journal Article
Nanoscale, ISSN 2040-3372, 2014, Volume 6, Issue 15, pp. 8671 - 8680
Journal Article
Materials Science in Semiconductor Processing, ISSN 1369-8001, 05/2018, Volume 78, pp. 96 - 106
Journal Article
Materials science forum, ISSN 0255-5476, 06/2018, Volume 924, pp. 285 - 288
In this paper, near interface traps (NITs) in lateral 4H-SiC MOSFETs were investigated employing temperature dependent transient gate capacitance measurements... 
Transient capacitance | Near interface traps | MOSFETs | Silicon dioxide
Journal Article
Materials science forum, ISSN 0255-5476, 06/2018, Volume 924, pp. 473 - 476
..., Simona Lorenti2, Fabrizio Roccaforte1 1Consiglio Nazionale delle Ricerche – Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII, n.5 Zona... 
Gate current | Fowler-Nordheim tunneling | Deposited SiO | MOS capacitors | Temperature dependence | Temperature | Silicon dioxide
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2016, Volume 109, Issue 1
This letter reports on the impact of gate oxide trapping states on the conduction mechanisms in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect... 
ELECTRIC FIELDS | MOSFET | TEMPERATURE DEPENDENCE | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | TRANSIENTS | INTERFACES | CURRENTS | TUNNEL EFFECT | SEMICONDUCTOR MATERIALS | SILICON CARBIDES | SILICON OXIDES
Journal Article
Beilstein Journal of Nanotechnology, ISSN 2190-4286, 2017, Volume 8, Issue 1, pp. 467 - 474
Graphene is an ideal candidate for next generation applications as a transparent electrode for electronics on plastic due to its flexibility and the... 
Field effect transistor | Atomic layer deposition | Graphene | Flexible electronics | Chemical sensing | PHYSICS, APPLIED | atomic layer deposition | MATERIALS SCIENCE, MULTIDISCIPLINARY | flexible electronics | NANOSCIENCE & NANOTECHNOLOGY | chemical sensing | field effect transistor | graphene | Field effect transistors
Journal Article
physica status solidi (a), ISSN 1862-6300, 09/2016, Volume 213, Issue 9, pp. 2341 - 2344
Stability in ambient air or in vacuum‐controlled atmosphere of molecular oxygen‐induced p‐type doping of graphene monolayer on SiO2 substrate on Si is... 
AFM | graphene doping | Raman | SiO2 | SiO | LAYER GRAPHENE | LARGE-AREA | PHYSICS, CONDENSED MATTER | DEFECTS | PHYSICS, APPLIED | FILMS | MATERIALS SCIENCE, MULTIDISCIPLINARY | Atomic force microscopy | Raman spectroscopy | Graphene | Graphite | Oxygen | Atomic beam spectroscopy | Doping | Silicon substrates | Control stability | Silicon dioxide
Journal Article
Materials science forum, ISSN 0255-5476, 06/2018, Volume 924, pp. 339 - 344
...Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology Fabrizio Roccaforte1,a*, Marilena Vivona1,2,b, Giuseppe Greco1,c, Raffaella Lo Nigro1,d... 
4H-SiC | Schottky contacts | Ohmic contacts | Silicon carbide
Journal Article
Materials science forum, ISSN 0255-5476, 06/2015, Volume 821-823, pp. 986 - 989
A nanoscale electrical characterization of graphene (Gr) contacts to AlxGa1-xN/GaN heterostructures has been carried out using conductive atomic force... 
AlGaN/GaN heterostructures | Conductive AFM | Contacts | Graphene | Electrical properties | Electric contacts | Gallium nitrides | Barriers | Aluminum gallium nitrides | Heterostructures | Contact
Journal Article
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