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Optics Express, ISSN 1094-4087, 06/2005, Volume 13, Issue 12, pp. 4786 - 4791
We show that high efficiency stimulated Raman scattering can be obtained using hollow core photonic crystal fiber with the core filled with a low refractive... 
INFRARED GENERATION | AIR | SILICA FIBERS | OPTICS | PHOTONIC-CRYSTAL FIBERS | LIQUIDS | Analytical chemistry | Optics | Material chemistry | Physics | Chemical Sciences
Journal Article
IEEE Photonics Technology Letters, ISSN 1041-1135, 03/2008, Volume 20, Issue 6, pp. 455 - 457
This letter demonstrates a planar junction GalnAs-AlInAs avalanche photodiode using back-side illumination through thinned InP substrate covered with chemical... 
Dark current | Gain-bandwidth product | Multiplication | Avalanche photodiodes (APDs) | Excess noise factor | AlInAs | Avalanches | Bandwidth | Illumination | High gain | Photodiodes | Chemical vapor deposition | Antireflection coatings
Journal Article
IEEE PHOTONICS TECHNOLOGY LETTERS, ISSN 1041-1135, 03/2008, Volume 20, Issue 5-8, pp. 455 - 457
This letter demonstrates a planar junction GaInAs-AlInAs avalanche photodiode using back-side illumination through thinned InP substrate covered with chemical... 
PHYSICS, APPLIED | dark current | gain-bandwidth product | excess noise factor | NOISE | multiplication | OPTICS | AlInAs | avalanche photodiodes (APDs) | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2013, Volume 8896
Recently Sofradir joined a very small circle of IR detector manufacturers with expertise every aspect of the cooled and uncooled IR technologies, all under one... 
InGaAs | Large format | Small pixel pitch | Infrared | SWAP | APD | FPA | InSb | QWIP | HOT | MCT | Missile launchers | Consumption | Iridium base alloys | Format | Target recognition | Detectors | Iridium | Pixels
Conference Proceeding
Optical Engineering, ISSN 0091-3286, 05/2011, Volume 50, Issue 6, pp. 061014 - 061014
Short-wavelength infrared image sensors based on p-i-n photodiode arrays present a tremendous interest in applications such as passive and active imagery for... 
InGaAs | SWIR | VGA format | VisSWIR | high dynamic range | N-TYPE INP | DETECTORS | VisSWIR, InGaAs | DIFFUSION | ABSORPTION | OPTICS | Indium gallium arsenides | Focal plane | Format | Lasers | Cameras | Sensors | Arrays | Devices
Journal Article
IEEE Photonics Technology Letters, ISSN 1041-1135, 06/2009, Volume 21, Issue 11, pp. 712 - 714
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 01/2012, Volume 8298
Hybrid InGaAs focal plane arrays are very interesting for night vision because they can benefit from the nightglow emission in the Short Wave Infrared band.... 
Night vision | Indium gallium arsenides | Noise | Circuits | Cadmium sulfides | Detectors | Images | Sensors
Journal Article
IEEE Photonics Technology Letters, ISSN 1041-1135, 03/2008, Volume 20, Issue 6, pp. 455 - 457
This letter demonstrates a planar junction GalnAs-AlInAs avalanche photodiode using back-side illumination through thinned InP substrate covered with chemical... 
Dry etching | gain-bandwidth product | Optical receivers | Indium phosphide | Substrates | Silicon compounds | Absorption | Bandwidth | Avalanche photodiodes | Dark current | excess noise factor | multiplication | Optical noise | AlInAs | avalanche photodiodes (APDs)
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2013, Volume 8704
SWIR detection band benefits from natural (sun, night glow, thermal radiation) or artificial (eye safe lasers) photons sources combined to low atmospheric... 
InGaAs | VGA | SWIR | VisSWIR | Focal plane | Eyes | Modules | Imaging | Markets | Arrays | Active control | Atmospherics
Conference Proceeding
IEEE Photonics Technology Letters, ISSN 1041-1135, 01/2009, Volume 21, Issue 11
This letter presents a comparative study of GaInAs-AlInAs avalanche photodiodes with different absorption layer thicknesses. Simulations concerning dark... 
Simulation | Avalanches | Dark current | Frequency response | Photodiodes | Devices | Noise factor | Photonics
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 01/2011, Volume 8176
Thanks to the high transmission coefficient of short infrared wavelengths in the atmosphere and specific contrasts, SWIR imaging is an attractive technology... 
Indium gallium arsenides | Wavelengths | Imaging | Modules | Images | Space applications | Sensors | Arrays
Journal Article
2012 International Conference on Indium Phosphide and Related Materials, ISSN 1092-8669, 08/2012, pp. 110 - 112
Dark current is a drastic specification for any kind of sensor and particularly for imagers dedicated to low light level. We propose here a method for... 
Dark current | Tunneling | Indium gallium arsenide | Photodiodes | Indium phosphide | Zinc | Standards
Conference Proceeding
Infrared Physics and Technology, ISSN 1350-4495, 12/2018, Volume 95, pp. 158 - 163
In this paper, a comparison of quantum efficiency and dark current densities of shallow etched and deep etched InAs/GaSb type-II superlattice photodiodes is... 
INSTRUMENTS & INSTRUMENTATION | PHYSICS, APPLIED | OPTICS | Analysis | Detectors
Journal Article
Optical Engineering, ISSN 0091-3286, 07/2005, Volume 44, Issue 7, pp. 075402 - 075405
The main characteristics of germanium photodetectors integrated in silicon-on-insulator optical waveguides for intrachip optical interconnects are presented.... 
microelectronic chips | optical interconnects | epitaxial growth | germanium | silicon on insulator | photodetector | waveguide | Microelectronic chips | Silicon on insulator | Optical interconnects | Germanium | Epitaxial growth | Photodetector | Waveguide | SILICON | OPTICS | LAYERS | GE/SI
Journal Article
Optical Engineering, ISSN 0091-3286, 10/2005, Volume 44, Issue 10, pp. 105402 - 1054010
CMOS technology downscaling is expected to encounter a metallic interconnect bottleneck in the near future due to increasing delays of global on-chip... 
on-chip | germanium | SOI | bit error rate | optical interconnects | photodetector | On-chip | Optical interconnects | Germanium | Bit error rate | Photodetector | MICROPROCESSORS | RIB WAVE-GUIDES | SILICON | INTERCONNECTS | OPTICS | MODULATOR
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2018, Volume 10624
Conference Proceeding
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2011, Volume 8185
SWIR image sensors based on p-i-n photodiodes arrays present a tremendous interest in applications often requiring a high intra-scene dynamics. This paper... 
InGaAs | VGA | SWIR | High dynamic range | VisGaAs | Indium gallium arsenides | Focal plane | Dynamics | Imaging | Images | Cameras | Arrays | Dynamical systems
Conference Proceeding
2008 20th International Conference on Indium Phosphide and Related Materials, ISSN 1092-8669, 05/2008, pp. 1 - 4
We demonstrate a planar junction AlInAs APD using Carbon as p-doping impurity of the charge layer allowing to achieve simultaneously a high primary sensitivity... 
Epitaxial layers | gain-bandwidth product | Indium phosphide | Substrates | ionization coefficients ratio | Absorption | Impurities | Ionization | APD | Avalanche photodiodes | Dark current | excess noise factor | Epitaxial growth | multiplication | AlInAs | Signal to noise ratio | AllnAs | Gain-bandwidth product | Multiplication | Ionization coefficients ratio | Component | Excess noise factor
Conference Proceeding
2006 European Conference on Optical Communications, ISSN 1550-381X, 09/2006, pp. 1 - 2
We demonstrate a back-illuminated planar AllnAs APD. We obtain a low excess noise factor of 4 at M=10 measured with an accurate noise characterization method... 
Absorption | Lighting | Avalanche photodiodes | Bandwidth | Dark current | Optical materials | Noise measurement | Optical noise | Indium phosphide | Assembly
Conference Proceeding
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2015, Volume 9451, Issue January
Conference Proceeding
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