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IEEE Electron Device Letters, ISSN 0741-3106, 2013, Volume 34, Issue 7, pp. 831 - 833
Journal Article
Photonics Research, ISSN 2327-9125, 2014, Volume 2, Issue 3, pp. A8 - A13
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 10/2011, Volume 58, Issue 10, pp. 3407 - 3415
While there have been many demonstrations on n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) in III-V semiconductors showing excellent... 
III-V p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) | gallium antimonide | hole mobility | Atomic layer deposition (ALD) | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 2012, Volume 33, Issue 11, pp. 1541 - 1543
Journal Article
Optics Letters, ISSN 0146-9592, 05/2006, Volume 31, Issue 10, pp. 1519 - 1521
We present a C-shaped nanoaperture-enhanced Ge photodetector that shows 2-5 times the photocurrent enhancement over that from a square aperture of the same... 
APERTURE | TRANSMISSION | ANTENNAS | EXCITATION | OPTICS | LIGHT
Journal Article
by Kim, SG and Kim, SH and Park, J and Kim, GS and Park, JH and Saraswat, KC and Kim, J and Yu, HY
ACS NANO, ISSN 1936-0851, 09/2019, Volume 13, Issue 9, pp. 10294 - 10300
Layered two-dimensional (2D) materials have entered the spotlight as promising channel materials for future optoelectronic devices owing to their excellent... 
optic-neural synapse | HETEROSTRUCTURES | MATERIALS SCIENCE, MULTIDISCIPLINARY | MoS2 phototransistor | wide detection range | LAYER MOS2 | GRAPHENE | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | two-dimensional materials | germanium gate | CHEMISTRY, MULTIDISCIPLINARY
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 2009, Volume 106, Issue 12
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 04/2018, Volume 123, Issue 14, p. 143101
This work presents titanium oxide (TiOx) and nickel oxide (NiOx) as promising carrier-selective interlayer materials for metal-interlayer–semiconductor... 
SURFACE-STATES | PHYSICS, APPLIED | EFFICIENCY | PERFORMANCE
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 08/2002, Volume 23, Issue 8, pp. 473 - 475
For the first time, we have successfully demonstrated the feasibility of integrating a high-permittivity (/kappa/) gate dielectric material zirconium oxide... 
High-permittivity dielectric | Germanium | Zirconium oxide | Surface passivation | MOS devices | Metal oxide semiconductors | Equivalence | Capacitors | Zirconium oxides | Oxides | Dielectrics | Devices | Gates
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2014, Volume 105, Issue 18
We report the experimental demonstration of Fermi level depinning using nickel oxide (NiO) as the insulator material in metal-insulator-semiconductor (M-I-S)... 
Nickel oxides | Solar cells | Conduction bands | Fermi level | Photovoltaic cells | Platinum | Barriers | Insulators | Silicon | Electron transport | Valence band | Photonics
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2017, Volume 110, Issue 9
We study the effect of surface passivation on pseudomorphic multiple-quantum-well Ge0.97Sn0.03/Ge p-i-n photodetectors. A combination of ozone oxidation to... 
Temperature dependence | Bias | Quantum wells | Photometers | Ozone | Passivity | Aluminum oxide | Atomic layer deposition | Dark current | Organic light emitting diodes | Oxidation | Germanium oxides | Activation energy
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 07/2006, Volume 53, Issue 7, pp. 1509 - 1516
In this paper, atomic layer deposition (ALD) and ultraviolet ozone oxidation (UVO) of zirconium and hafnium oxides are investigated for high-k dielectric... 
High-permittivity dielectric | Germanium | Hafnium oxide | Zirconium oxide | Surface passivation | MOS devices | HFO2 | surface passivation | PHYSICS, APPLIED | DEPOSITION | high-permittivity dielectric | ELECTRICAL-PROPERTIES | hafnium oxide | ULTRAVIOLET OZONE OXIDATION | germanium | ENGINEERING, ELECTRICAL & ELECTRONIC | GE SUBSTRATE | ZRO2 | GROWTH | DEVICES | zirconium oxide
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2004, Volume 85, Issue 14, pp. 2902 - 2904
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 02/2013, Volume 113, Issue 7, p. 73707
GeSn is predicted to exhibit an indirect to direct band gap transition at alloy Sn composition of 6.5% and biaxial strain effects are investigated in order to... 
ELECTRONIC-PROPERTIES | PHYSICS, APPLIED | FILMS | SEMICONDUCTORS | Thermal properties | Tin alloys | Usage | Analysis | Crystals | Mechanical properties | Germanium | Structure | Mathematical optimization | Alloy development | Band structure of solids | Disorders | Electronics | Alloying | Mathematical models | Strain | Tin base alloys
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 04/2002, Volume 49, Issue 4, pp. 590 - 597
Journal Article
Nano Letters, ISSN 1530-6984, 06/2016, Volume 16, Issue 6, pp. 3824 - 3830
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2013, Volume 103, Issue 24
GeSn is quickly emerging as a potential candidate for high performance Si-compatible transistor technology. Fabrication of high-ĸ gate stacks on GeSn with good... 
PASSIVATION | PERFORMANCE | MATERIALS SCIENCE | DENSITY | FIELD EFFECT TRANSISTORS | GERMANIUM | SURFACE TREATMENTS | ALLOYS | INTERFACES | TIN | FABRICATION | ALUMINIUM OXIDES | SURFACES
Journal Article
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