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materials science, multidisciplinary (11) 11
physics, applied (9) 9
single crystals (8) 8
czochralski method (6) 6
epitaxy (6) 6
crystallography (5) 5
doping (5) 5
gallium oxides (5) 5
sauerstoff (5) 5
absorptionskante (4) 4
beta-ga2o3 (4) 4
crystal growth (4) 4
free electrons (4) 4
optical properties (4) 4
scintillation (4) 4
single-crystals (4) 4
a2. czochralski method (3) 3
analysis (3) 3
beta-ga2o3 crystal (3) 3
cerium (3) 3
czochralski-verfahren (3) 3
dopants (3) 3
einkristall (3) 3
electron mobility (3) 3
elektronendichte (3) 3
entmischung (3) 3
freies elektron (3) 3
hall effect (3) 3
kristallwachstum (3) 3
oxid (3) 3
physics, condensed matter (3) 3
transmissionselektronenmikroskopie (3) 3
a1. annealing (2) 2
a1. characterization (2) 2
a1. doping (2) 2
absorption spectra (2) 2
aluminum (2) 2
annealing (2) 2
b1. β-ga (2) 2
b2. transparent semiconducting oxide (2) 2
carrier density (2) 2
cathodoluminescence (2) 2
charakterisierung (2) 2
crystal (2) 2
crystal structure (2) 2
crystals (2) 2
defects (2) 2
doped crystals (2) 2
electrical properties (2) 2
elektrische eigenschaft (2) 2
elektron (2) 2
elektronenbeweglichkeit (2) 2
epitaxial layers (2) 2
epitaxiale schicht (2) 2
epitaxiales wachstum (2) 2
ga2o3 (2) 2
gallium (2) 2
gallium oxide (2) 2
gasphase (2) 2
inkorporierung (2) 2
luminescence (2) 2
materials science (2) 2
metalldampf (2) 2
monokristall (2) 2
optical-properties (2) 2
optics (2) 2
optische eigenschaft (2) 2
oxide (2) 2
oxygen (2) 2
radioluminescence (2) 2
raumtemperatur (2) 2
sauerstoffatmosphäre (2) 2
segregation (2) 2
stacking faults (2) 2
stapelfehler (2) 2
structure (2) 2
transmission electron microscopy (2) 2
transparent semiconducting oxide (2) 2
transparent semiconducting oxides (2) 2
vapor phase epitaxy (2) 2
visible spectrum (2) 2
β-ga2o3 (2) 2
β-ga2o3 crystal (2) 2
530 physik (1) 1
a1. doping with cr, ce, al (1) 1
a1. optical properties (1) 1
a1. segregation (1) 1
absorption (1) 1
absorption cross sections (1) 1
absorption edge (1) 1
absorptionsbande (1) 1
absorptionsquerschnitt (1) 1
adsorption (1) 1
adsorptionsverfahren (1) 1
al2o3 (1) 1
alpha-phase (1) 1
atmosphere (1) 1
atmospheres (1) 1
automated crystal growth (1) 1
b1. β-ga2o3 (1) 1
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Journal of crystal growth, ISSN 0022-0248, 2014, Volume 404, pp. 184 - 191
The growth of bulkx β-Ga2O3 single crystals by the Czochralski method is reported and discussed in terms of crucial growth conditions and correlated with basic... 
A1. Doping | B2. Transparent semiconducting oxide | A1. Characterization | A1. Annealing | A2. Czochralski method | B1. β-Ga2O3 | Annealing | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | Doping | ELECTRICAL-PROPERTIES | Czochralski method | FLUX | CRYSTALLOGRAPHY | Characterization | TRANSPORT | BETA-GALLIUM OXIDE | TRANSPARENT | beta-Ga2O3 | Transparent semiconducting oxide
Journal Article
physica status solidi (a), ISSN 1862-6300, 01/2014, Volume 211, Issue 1, pp. 27 - 33
Epitaxial β‐Ga2O3 layers have been grown on β‐Ga2O3 (100) substrates using metal‐organic vapor phase epitaxy. Trimethylgallium and pure oxygen or water were... 
Ga2O3 | transparent semiconducting oxides | metal‐organic vapor phase epitaxy | structure | thin films | metal-organic vapor phase epitaxy | SURFACE-MORPHOLOGY | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | DEPOSITION | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOLECULAR-BEAM EPITAXY | ADSORPTION | GAAS | HYDROGEN | OXIDE THIN-FILMS
Journal Article
physica status solidi (a), ISSN 1862-6300, 07/2015, Volume 212, Issue 7, pp. 1455 - 1460
Bulk MgGa2O4 single crystals with inverse spinel structure were grown from the melt by different methods. The degree of inversion could be changed by suitable... 
melt growth | optical properties | thermodynamic properties | MgGa2O4 | single crystals | electrical properties | MgGa | Melt growth | Single crystals | Electrical properties | Thermodynamic properties | Optical properties | GALLIUM OXIDE | PHYSICS, CONDENSED MATTER | SPINEL | PHYSICS, APPLIED | BETA-GA2O3 | MATERIALS SCIENCE, MULTIDISCIPLINARY | Epitaxy | Analysis
Journal Article
Journal of crystal growth, ISSN 0022-0248, 2018, Volume 486, pp. 82 - 90
•Bulk β-Ga2O3 crystals grown the Czochralski method are doped with Cr, Ce, and Al.•Segregation phenomena of the dopants are analyzed.•Effective segregation... 
A1. Segregation | A1. Doping with Cr, Ce, Al | A1. Optical properties | A2. Czochralski method | B1. β-Ga2O3 crystal | B1. β-Ga | crystal | PHYSICS, APPLIED | OXIDE | Segregation | SCANDIUM GALLIUM GARNET | MATERIALS SCIENCE, MULTIDISCIPLINARY | Czochralski method | CRYSTALLOGRAPHY | IMPURITIES | ATMOSPHERE | Optical properties | Doping with Cr, Ce, Al | beta-Ga2O3 crystal | DOPED BETA-GA2O3
Journal Article
physica status solidi (a), ISSN 1862-6300, 01/2014, Volume 211, Issue 1, pp. 66 - 73
SnO2 is a semiconductor with a wide optical bandgap (3.5 eV), which makes it an attractive transparent semiconducting oxide (TSO) for electronic and... 
SnO2 | transparent semiconducting oxides | crystal growth | single crystals | physical vapor transport | SnO | SYSTEM | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | STANNIC OXIDE CRYSTALS | FILMS | TIN OXIDE | ABSORPTION EDGE | VAPOR-PHASE | Epitaxy | Analysis
Journal Article
Radiation measurements, ISSN 1350-4487, 2019, Volume 121, pp. 49 - 53
β-Ga2O3 and β-Ga2O3:Ce crystals have been grown by the Czochralski method and their scintillation properties have been studied by means of pulse height,... 
β-Ga2O3 crystal | Scintillation | Scintillation decay | Ce-doped β-Ga2O3 crystal | Radioluminescence | Ce-doped β-Ga | β-Ga | crystal | SINGLE-CRYSTALS | LUMINESCENCE | YIELD | NUCLEAR SCIENCE & TECHNOLOGY | ULTRA-FAST SCINTILLATION | Ce-doped beta-Ga2O3 crystal | beta-Ga2O3 crystal
Journal Article
APPLIED PHYSICS EXPRESS, ISSN 1882-0778, 01/2015, Volume 8, Issue 1
Heteroepitaxial Ga2O3 was grown on c-plane sapphire by molecular beam epitaxy, pulsed-laser deposition, and metalorganic Chemical vapor deposition.... 
PHASE | PHYSICS, APPLIED | AL2O3 | THIN-FILM | BETA-GA2O3 | GROWTH
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2014, Volume 404, pp. 184 - 191
The growth of bulkx β-Ga O single crystals by the Czochralski method is reported and discussed in terms of crucial growth conditions and correlated with basic... 
A1. Doping | B1. β-Ga | B2. Transparent semiconducting oxide | A1. Annealing | A1. Characterization | A2. Czochralski method
Journal Article
ECS Journal of Solid State Science and Technology, ISSN 2162-8769, 2017, Volume 6, Issue 2, pp. Q3040 - Q3044
We studied the growth of Si-and Sn-doped homoepitaxial beta-Ga2O3 layers on (010)-oriented substrates by metal organic vapor phase epitaxy (MOVPE). At optimal... 
SINGLE-CRYSTALS | PHYSICS, APPLIED | OXIDE | CHEMICAL-VAPOR-DEPOSITION | GAN | MATERIALS SCIENCE, MULTIDISCIPLINARY
Journal Article
Crystal research and technology (1979), ISSN 0232-1300, 02/2020, Volume 55, Issue 2, p. 1900097
Journal Article
In dieser Arbeit werden die grundlegenden Wachstumsprozesse von Ga2O3 , mittels Transmissionselektronenmikroskopie analysiert. Dazu gehört die Untersuchung des... 
Transmission electron microscopy | Epitaxy | UH 6302 | Ga2O3 | ddc:530 | Transmissionselektronenmikroskopie | Structure | Struckturbestimmung | 530 Physik
Dissertation
OPTICAL MATERIALS EXPRESS, ISSN 2159-3930, 09/2019, Volume 9, Issue 9, pp. 3738 - 3743
Measurements of pulse height spectra and scintillation time profiles performed on Czochralski-grown beta-Ga2O3, beta-Ga2O3:Ce, and beta-Ga2O3:Ce,Si crystals... 
SINGLE-CRYSTALS | MATERIALS SCIENCE, MULTIDISCIPLINARY | OPTICS | Pulse amplitude | Gallium oxides | Doped crystals | Scintillation counters | Free electrons | Cerium | Scintillation
Journal Article
Crystal research and technology (1979), ISSN 0232-1300, 2019, p. 1900097
Journal Article
Optical materials, ISSN 0925-3467, 07/2020, Volume 105, p. 109856
Our recent research on scintillation properties of β-Ga2O3 crystals, either pure or singly-, doubly-, and triply-doped, obtained with the Czochralski method at... 
Czochralski-growth | β-Ga2O3 crystal | Scintillation yield | Scintillation time profile | Doping | Thermoluminescence | SINGLE-CRYSTALS | LUMINESCENCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | OPTICS | beta-Ga2O3 crystal
Journal Article
APL Materials, ISSN 2166-532X, 02/2019, Volume 7, Issue 2, pp. 22512 - 022512-12
..., a) Steffen Ganschow, Robert Schewski, Klaus Irmscher, Detlef Klimm, Albert Kwasniewski, Mike Pietsch, Andreas Fiedler, Isabelle Schulze-Jonack, Martin Albrecht, Thomas... 
PHYSICS, APPLIED | PHOTOLUMINESCENCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | OPTICAL-PROPERTIES | CATHODOLUMINESCENCE | NANOSCIENCE & NANOTECHNOLOGY | LUMINESCENCE CHARACTERISTICS | PARAMETERS | FLUX GROWTH | PHOSPHOR THIN-FILMS | REDUCTION | ZINC ALUMINATE | SPINEL OXIDES
Journal Article
Crystal Research and Technology, ISSN 0232-1300, 02/2020, Volume 55, Issue 2, p. n/a
This contribution presents the growth of Si1−xGex crystals with constant gradient of composition for X‐ray or γ‐ray diffraction optics using automated control... 
SiGe gradient crystals | Czochralski technique | automated crystal growth | CRYSTALLOGRAPHY
Journal Article
Radiation measurements, ISSN 1350-4487, 02/2019, Volume 121, p. 49
[beta]-Ga.sub.2O.sub.3 and [beta]-Ga.sub.2O.sub.3:Ce crystals have been grown by the Czochralski method and their scintillation properties have been studied by... 
Journal Article
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