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Materials science forum, ISSN 0255-5476, 05/2016, Volume 858, pp. 544 - 548
The warpage structure of 4°-off-axis (0001) 4H-SiC samples after implantation and annealing processes was investigated using white light interferometry (WLI)... 
Implantation and annealing | Silicon carbide | Warpage structure | Annealing | Energy use | White light interferometry | Mathematical analysis | X-rays | Warpage | Implantation
Journal Article
Materials science forum, ISSN 0255-5476, 02/2014, Volume 778-780, pp. 449 - 452
We examined the warpage structure in epitaxial 4H-SiC wafers subjected to phosphorus-ion (P+) implantation and post-annealing with varying implantation and... 
Raman spectroscopy | X-ray topography | Warpage structure
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 02/2011, Volume 26, Issue 2, p. 025009
... Ohtani 1 , Seiji Kawado 1 , Yasuharu Hirai 1 and Shinji Nagamachi 2 1 Kyushu Synchrotron Light Research Center, 8-7 Yayoigaoka, Tosu, Saga 841-0005, Japan 2 Ion... 
PHYSICS, CONDENSED MATTER | CARBIDE | MATERIALS SCIENCE, MULTIDISCIPLINARY | ION-IMPLANTATION | GROWTH | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Japanese Journal of Applied Physics, ISSN 1347-4065, 2017, Volume 56, Issue 10, p. 106601
We performed X-ray topography using the asymmetric 1128 back-reflection by changing the incident X-ray energy (E) in order to evaluate the observable depth... 
CRYSTALS | PHYSICS, APPLIED | EPITAXIAL LAYER | GROWTH
Journal Article
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, ISSN 0021-4922, 1999, Volume 38, Issue S1, pp. 520 - 525
The present paper reviews recent synchrotron x-ray topographic studies on minute fluctuations of impurity- and point-defect concentration in CZ and FZ silicon... 
SYSTEM | PHYSICS, APPLIED | ELECTRON-MICROSCOPE OBSERVATION | IMAGING-PLATE | STRIATIONS | lattice imperfections | OXYGEN | SINGLE-CRYSTALS | silicon | IN DEFECTS | x-ray diffraction topography | CZOCHRALSKI-GROWN SILICON | MINUTE STRAIN FIELDS | synchrotron radiation | LATTICE DISTORTION
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 12/2004, Volume 96, Issue 11, pp. 6259 - 6261
Surface roughness and undulation of unpatterned silicon wafers are serious issues for ultralarge-scale-integrated circuit devices, even after fine... 
RADIATION | PHYSICS, APPLIED | Silicon | Research | Observations | Synchrotron radiation
Journal Article
physica status solidi (a), ISSN 1862-6300, 11/2011, Volume 208, Issue 11, pp. 2516 - 2521
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 10/2017, Volume 56, Issue 10, p. 106601
We performed X-ray topography using the asymmetric 1128 back-reflection by changing the incident X-ray energy (E) in order to evaluate the observable depth (t... 
X ray reflection | X rays | Topography | Linearity | Basal plane | X ray topography | Visibility | Dislocations
Journal Article
AIP Conference Proceedings, ISSN 0094-243X, 2007, Volume 879, Issue 1, pp. 1545 - 1549
We have examined the neck of a large-diameter [001]-oriented Czochralski silicon crystal by synchrotron white X-ray topography combined with a topo-tomographic... 
Crystal growth | Czochralski method | Silicon | Dislocation elimination | X-ray topography | X RADIATION | DISLOCATIONS | CRYSTAL GROWTH | SILICON | CRYSTALS | INTERFACES | SYNCHROTRON RADIATION | TOPOGRAPHY | MATERIALS SCIENCE
Conference Proceeding
Nihon Kessho Gakkaishi/Journal of the Crystallographic Society of Japan, ISSN 0369-4585, 01/2012, Volume 54, Issue 1, pp. 2 - 11
After a short history of X-ray diffraction topography, from the early stage of laboratory X-ray topography to recent synchrotron-radiation applications, is... 
Diffraction | Synchrotrons | Topography | X-rays | Industrial applications | Trends | Crystallography | X-ray topography
Journal Article
Journal of Synchrotron Radiation, ISSN 1600-5775, 05/2002, Volume 9, Issue 3, pp. 169 - 173
Plane‐wave X‐ray topography experiments were carried out at a 200 m‐long beamline, BL20B2, at SPring‐8. Relatively high‐energy X‐rays of 30 keV with an angular... 
X‐ray topography | lattice defects | silicon crystal | plane‐wave | Silicon crystal | Lattice defects | Plane-wave | X-ray topography | plane-wave | DEFECTS | PHYSICS, APPLIED | SYNCHROTRON-RADIATION | GROWN SILICON | INSTRUMENTS & INSTRUMENTATION | CZOCHRALSKI SILICON | CONSTRUCTION | MICRODEFECTS | MINUTE STRAIN FIELDS | OPTICS
Journal Article
Materials Science Forum, ISSN 0255-5476, 02/2014, Volume 778-780, pp. 449 - 452
We examined the warpage structure in epitaxial 4H-SiC wafers subjected to phosphorus-ion (P super(+)) implantation and post-annealing with varying implantation... 
Synchrotrons | Wafers | Lattices | Disorders | Warpage | Implantation | Recovery | X-ray topography
Journal Article
Japanese journal of applied physics. Pt. 2, Letters, ISSN 0021-4922, 12/2000, Volume 39, Issue 12 A, pp. L1252 - L1255
Wavelength-dispersive total reflection X-ray fluorescence(WD-TXRF)equipment supported by an energy-dispersive(ED)solid-state detector(SSD)has been developed... 
trace element | PHYSICS, APPLIED | undulator | XRF | TXRF | SPring-8 | contamination
Journal Article
Materials Science in Semiconductor Processing, ISSN 1369-8001, 2002, Volume 5, Issue 4, pp. 435 - 444
Journal Article
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, ISSN 0021-4922, 2000, Volume 39, Issue 3 A, pp. 1409 - 1413
From a theoretical understanding of rocking curves of extremely asymmetric X-ray diffraction from silicon crystals on which SiO2 films were thermally grown,... 
Thickness | Dynamical theory | Silicon oxide | SiO | Extremely asymmetric X-ray diffraction | film | Density | Synchrotron radiation | dynamical theory | PHYSICS, APPLIED | REFLECTIVITY | density | INTERFACE | thickness | extremely asymmetric X-ray diffraction | SiO2 film | silicon oxide | ANGLE | synchrotron radiation
Journal Article
Journal of the Electrochemical Society, ISSN 0013-4651, 1998, Volume 145, Issue 9, pp. 3063 - 3066
Amorphous layers of gallium arsenide (a-GaAs) formed by heavy implantation of silicon ions and crystalline gallium arsenide (c-GaAs) were irradiated with... 
ELECTROCHEMISTRY | PHOTOLUMINESCENCE | AUGER | LOW-TEMPERATURES | MATERIALS SCIENCE, COATINGS & FILMS | MOLECULAR-BEAM EPITAXY
Journal Article
physica status solidi (a), ISSN 1862-6300, 08/2007, Volume 204, Issue 8, pp. 2682 - 2687
...References [1] W. Ludwig , P. Cloetens , J. Härtwig , J. Baruchel , B. Hamelin , and P. Bastie , J. Appl. Cryst. 34 , 602 ( 2001 ). [2] S. Kawado , T. Taishi... 
61.72.Ff | 3-DIMENSIONAL STRUCTURE | TOPO-TOMOGRAPHIC TECHNIQUE | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON
Journal Article
Nihon Kessho Gakkaishi/Journal of the Crystallographic Society of Japan, ISSN 0369-4585, 01/2012, Volume 54, Issue 1, pp. 12 - 17
The lattice defects in bulky crystals have three-dimensional distribution. The evaluation technique should provide three-dimensional information of these... 
Lattice defects | Crystal defects | Synchrotrons | X-ray sources | X-ray topography | Light sources | Strain | Three dimensional
Journal Article
Japanese journal of applied physics. Pt. 2, Letters, ISSN 0021-4922, 06/1994, Volume 33, Issue 6 B, pp. L823 - L825
This letter reports that a novel analysis system has been developed to determine lattice distortion in silicon single crystals from plane-wave X-ray topographs... 
Plane-wave X-ray topography | Local lattice distortion | Synchrotron radiation | Analysis system | Imaging plate | LOCAL LATTICE DISTORTION | PHYSICS, APPLIED | IMAGING PLATE | PLANE-WAVE X-RAY TOPOGRAPHY | CRYSTALS | SYNCHROTRON RADIATION | ANALYSIS SYSTEM
Journal Article
Japanese journal of applied physics. Pt. 1, Regular papers & short notes, ISSN 0021-4922, 03/2000, Volume 39, pp. 1409 - 1413
From a theoretical understanding of rocking curves of extremely asymmetric X-ray diffraction from silicon crystals on which SiO_2 films were thermally grown,... 
Journal Article
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