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Journal of Alloys and Compounds, ISSN 0925-8388, 12/2017, Volume 728, pp. 1235 - 1238
The dual-phase AlCoCrFeNi alloy exhibits excellent specific strength in the 773–873 K temperature range. However, the phase transformation taking place above... 
High-entropy alloys | Mechanical properties | Casting | Microscopy and microanalysis techniques | Phase transformations | BEHAVIOR | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | EXPLORATION | CHEMISTRY, PHYSICAL | MECHANICAL-PROPERTIES | MICROSTRUCTURE | Building materials | Alloys
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 11/2018, Volume 39, Issue 11, pp. 1636 - 1639
This letter reports high-quality plasma-assisted atomic-layer-deposited HfO x N y by using isopropyl alcohol (IPA) oxidant and cyclic N 2 plasma treatment... 
IPA oxidant | Capacitance-voltage characteristics | inversion | Logic gates | Oxidation | InGaAs MOS | Hafnium compounds | Plasmas | Hafnium oxintride | Nitrogen | nitridation | Surface treatment | Isopropyl alcohol | Plasma | Nitrogen plasma | Dielectric strength | Oxygen
Journal Article
Advances in Mechanical Engineering, ISSN 1687-8132, 6/2019, Volume 11, Issue 6, p. 168781401985978
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 04/2009, Volume 19, Issue 4, pp. 200 - 202
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 07/2018, Volume 39, Issue 7, pp. 995 - 998
This letter reports the excellent radio frequency output characteristics of AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuits... 
power amplifier | dual MIS | AlGaN/GaN-on-Si | Gallium nitride | Ka-band | Radio frequency | high-k | gate recess | Logic gates | HEMTs | Wide band gap semiconductors | Aluminum gallium nitride | Power generation | MMIC | Integrated circuits | Gallium nitrides | Power amplifiers | MMIC (circuits) | Power efficiency | Aluminum gallium nitrides | Continuous radiation
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2013, Volume 34, Issue 2, pp. 214 - 216
A novel AlGaN/GaN-on-Si rectifier with a gated ohmic anode has been proposed to reduce the turn-on voltage without breakdown-voltage degradation. The... 
gated ohmic anode | Breakdown voltage | Schottky barriers | AlGaN/GaN-on-Si | rectifier | Logic gates | HEMTs | turn-on voltage | Anodes | Gallium nitride | Aluminum gallium nitride | breakdown voltage | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
International Journal of Control, Automation and Systems, ISSN 1598-6446, 6/2018, Volume 16, Issue 3, pp. 1226 - 1238
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 12/2016, Volume 37, Issue 12, pp. 1613 - 1616
Journal Article
Scientific Reports, ISSN 2045-2322, 12/2018, Volume 8, Issue 1, pp. 17743 - 10
Utilization of biodegradable metals in biomedical fields is emerging because it avoids high-risk and uneconomic secondary surgeries for removing implantable... 
RESPONSES | METALS | ALLOYS | IN-VITRO DEGRADATION | AMINO-ACIDS | BEHAVIOR | MULTIDISCIPLINARY SCIENCES | SURFACE | MECHANISMS | IMPLANTS | NADPH | Biodegradation | Calcium | Risk groups | Biodegradability | Metals | Adenine | Oxides | Cell adhesion & migration | NAD | NADH | Corrosion | Cell adhesion | Biocompatibility | Nicotinamide | Magnesium
Journal Article
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 04/2008, Volume 18, Issue 4, pp. 287 - 289
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 10/2014, Volume 35, Issue 10, pp. 995 - 997
A 29.4-W X-band high-power amplifier has been substantialized using GaN on high-resistive silicon substrate. The developed GaN high electron mobility... 
power density | PAE | AlGaN/GaN-on-Si | HEMTs | X-band | Silicon | amplifier | MODFETs | Gallium nitride | Substrates | Aluminum gallium nitride | Power generation | Power density | Amplifier | Algan/gan-on-si | Pae | ELECTRON-MOBILITY TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Physics Express, ISSN 1882-0778, 6/2012, Volume 5, Issue 6, pp. 066502 - 066502-3
We have demonstrated state-of-the-art characteristics of AlGaN/GaN-on-Si heterojunction field effect transistors (HFETs) employing dual field plates. Both gate... 
BREAKDOWN VOLTAGE | CONTACTS | DESIGN | PHYSICS, APPLIED | GAN | ENHANCEMENT | HEMTS
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2014, Volume 35, Issue 2, pp. 175 - 177
To fabricate gate recessed normally-off AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors, we have employed a novel SiNx/HfO2 dual... 
hafnium oxide | Insulators | Dielectrics | Leakage currents | Gallium nitride | plasma enhanced atomic layer deposition (PEALD) | metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) | silicon nitride | GaN | RF-sputtering | Logic gates | Hafnium compounds | Dual gate insulator | Aluminum gallium nitride | Transistors
Journal Article
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