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IEEE Electron Device Letters, ISSN 0741-3106, 03/2016, Volume 37, Issue 3, pp. 329 - 332
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 11/2016, Volume 37, Issue 11, pp. 1375 - 1378
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 11/2016, Volume 37, Issue 11, pp. 1375 - 1378
A compact balanced frequency doubler with more than 35 dB odd-harmonic rejection and fractional bandwidth of 73% is presented in this letter. Wide bandwidth... 
Coils | Couplings | transformer balun | SiGe | Impedance matching | Frequency doubler | Metals | Bandwidth | Harmonic analysis | Gain
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2016, Volume 37, Issue 3, p. 329
  An on-chip resonator is designed and fabricated using a standard 0.13-[Formula Omitted] SiGe technology for millimeter-wave applications. The designed... 
Electronics industry
Journal Article
Journal Article
IEEE Transactions on Microwave Theory and Techniques, ISSN 0018-9480, 10/2013, Volume 61, Issue 10, pp. 3625 - 3631
Carbon nanotube (CNT) yarns are novel CNT-based materials that extend the advantages of CNT from the nanoscale to macroscale applications. In this study, we... 
Microwave measurement | Wires | Transmission line measurements | Carbon nanotube (CNT) | CNT yarn model | Electrical resistance measurement | CNT yarn | Yarn | Immune system | CONDUCTIVITY | COMPOSITES | MODEL | SHEETS | ENGINEERING, ELECTRICAL & ELECTRONIC | Wireless sensor networks | Research | Analysis | Nanotubes | Ultra wideband technology
Journal Article
2016 IEEE MTT-S International Microwave Symposium (IMS), ISSN 0149-645X, 05/2016, Volume 2016-, pp. 1 - 4
An ultra-compact integrated resonator and bandpass filters (BPF), in silicon-based technology, are presented for millimetre-wave applications. The resonator... 
Band-pass filters | Resonant frequency | Metals | Broadside-coupled resonator | slow-wave structure | CMOS integrated circuits | millimeter-wave | Microwave filters | Silicon germanium | Equivalent circuits | Q factors | Equivalence | Attenuation | Bandpass filters | Resonators | Microwaves | Standards | Silicon germanides
Conference Proceeding
IEEE Electron Device Letters, ISSN 0741-3106, 03/2016, Volume 37, Issue 3, pp. 329 - 332
An on-chip resonator is designed and fabricated using a standard 0.13-μm SiGe technology for millimeter-wave applications. The designed resonator is based on a... 
Band-pass filters | Broadside-coupled | meander-line resonator | SiGe | Resonant frequency | CMOS technology | slow-wave structure | CMOS integrated circuits | System-on-chip | Yttrium | millimeter-wave | Silicon germanium
Journal Article
2015 IEEE International Symposium on Circuits and Systems (ISCAS), ISSN 0271-4302, 05/2015, Volume 2015-, pp. 2848 - 2851
A transformer-coupled frequency quadrupler with 50% bandwidth is designed in a 0.25μm SiGe process. The quadrupler covers an output frequency range from 36GHz... 
Marchand balun | transformer-coupled | quadrupler | SiGe | Impedance matching | Harmonic analysis | Wideband | Mixers | Power generation | Silicon germanium
Conference Proceeding
2007 IEEE/MTT-S International Microwave Symposium, ISSN 0149-645X, 06/2007, pp. 471 - 474
An all electronic 6 Gbps millimetre wave point-to-point link in the 85 GHz band has been developed. The complete link has been built including RF, IF and... 
modems | Phase modulation | Communication systems | Millimeter wave measurements | point-to-point links | Optical transmitters | Millimeter wave communication | radio communication | Radio frequency | Phase shift keying | Millimeter wave technology | Bandwidth | MMICs | Optical modulation | Point-to-point links | Modems | Radio communication
Conference Proceeding
IEEE Conferences, 05/2015, pp. 2848 - 2851
A transformer-coupled frequency quadrupler with 50% bandwidth is designed in a 0.25 mu m SiGe process. The quadrupler covers an output frequency range from... 
Harmonics | Electric potential | Baluns | Asymmetry | Voltage | Bandwidth | Wideband | Silicon germanides
Journal Article
2016 IEEE 2nd Australian Microwave Symposium (AMS), 02/2016, pp. 35 - 36
A compact transformer balun with less than 0.13 dB magnitude imbalance and 0.4° phase imbalance from 7 to 15 GHz is presented. The balun is suitable for use... 
Coils | Frequency modulation | SiGe | Impedance matching | balun | transformer | Harmonic analysis | frequency doubler | Frequency measurement | Gain | Silicon germanium
Conference Proceeding
IEEE Transactions on Microwave Theory and Techniques, ISSN 0018-9480, 10/1998, Volume 46, Issue 10, pp. 1572 - 1576
This paper describes the design and fabrication of fully monolithic VCO circuits using a combined GaAs HEMT and Schottky-varactor diode process. Three VCO... 
Journal Article
2013 22nd International Conference on Noise and Fluctuations (ICNF), 06/2013, pp. 1 - 4
Time-varying low-frequency noise is observed in InGaP/GaAs heterojunction bipolar transistors from two different foundries. Frequency-domain noise spectral... 
Phase noise | Voltage measurement | Density measurement | Heterojunction bipolar transistors | Frequency measurement | Noise measurement
Conference Proceeding
2013 22nd International Conference on Noise and Fluctuations (ICNF), 06/2013, pp. 1 - 4
Two-channel noise measurements are useful for obtaining all four noise parameters of a transistor for circuit simulation and for locating the noise sources... 
Resistors | Voltage measurement | Density measurement | Noise | Frequency measurement | Noise measurement | Equations
Conference Proceeding
Asia-Pacific Microwave Conference 2011, ISSN 2165-4727, 12/2011, pp. 1242 - 1245
Self heating in GaAs based heterojunction bipolar transistors affect the microwave performance and needs to be taken into account in circuit design. It can be... 
Impedance measurement | Heterojunction bipolar transistor | self heating | Current measurement | Thermal resistance | Fingers | thermal impedance | Heterojunction bipolar transistors | Frequency measurement | low frequency dispersion | Impedance | Bipolar transistors | Mathematical models | Design and construction | Impedance (Electricity)
Conference Proceeding
2011 21st International Conference on Noise and Fluctuations, 06/2011, pp. 275 - 278
Accurately measured low frequency noise and correlation of GaAs based Heterojunction Bipolar Transistors (HBTs) have been reported between 10 Hz and 100 kHz.... 
Resistors | Correlation | Voltage measurement | Low frequency noise | Noise | GaAs HBT | Heterojunction bipolar transistors | Frequency measurement | Noise measurement | noise correlation matrix
Conference Proceeding
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