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Semiconductors, ISSN 1063-7826, 9/2017, Volume 51, Issue 9, pp. 1133 - 1135
Journal Article
Semiconductors, ISSN 1063-7826, 02/2014, Volume 48, Issue 2, p. 199
The study is concerned with the effect of the additional implantation of Si samples with [C.sup.+], [O.sup.+], [B.sup.+], [P.sup.+], and [Ge.sup.+] impurity... 
Annealing | Photoluminescence | Silicon
Journal Article
Physics of the Solid State, ISSN 1063-7834, 12/2016, Volume 58, Issue 12, pp. 2499 - 2502
The photoluminescence properties of (113) defects formed in a silicon structure after the implantation by oxygen ions with an energy of 350 keV and doses of... 
Solid State Physics | Physics | LIGHT-EMITTING-DIODES | PHYSICS, CONDENSED MATTER | EVOLUTION | ROOM-TEMPERATURE ELECTROLUMINESCENCE | Annealing | Silicon | Analysis | Photoluminescence
Journal Article
Semiconductors, ISSN 1063-7826, 2/2016, Volume 50, Issue 2, pp. 240 - 243
Silicon-based light-emitting diodes (LEDs) fabricated by the Si-ion implantation and chemical-vapor deposition methods are studied. Room-temperature... 
Physics | Magnetism, Magnetic Materials | Physics, general | Light-emitting diodes | Optoelectronics industry
Journal Article
Technical Physics Letters, ISSN 1063-7850, 7/2018, Volume 44, Issue 7, pp. 574 - 576
Secondary-ion mass spectrometry and Rutherford proton backscattering have been used to measure the concentration profiles of nitrogen atoms and examine the... 
Classical and Continuum Physics | Physics | PHYSICS, APPLIED | Ion implantation | Point defects | Mathematical analysis | Amorphization | Backscattering | Nitrogen atoms | Secondary ion mass spectrometry | Surface layers
Journal Article
Technical Physics Letters, ISSN 1063-7850, 9/2018, Volume 44, Issue 9, pp. 817 - 819
Structural defects formed in epitaxial GaAs layers as a result of 250-keV N+ ion implantation to doses within 5 × 1014–5 × 1016 cm–2 have been studied by the... 
Classical and Continuum Physics | Physics | PHYSICS, APPLIED | NANOSTRUCTURES | Nitrogen | Gallium arsenide | Epitaxy | Ion implantation | Transmission electron microscopy | Nitrogen ions | Deformation | Amorphization | X-ray diffraction | Defects
Journal Article
Semiconductors, ISSN 1063-7826, 12/2015, Volume 49, Issue 12, pp. 1651 - 1654
Low-temperature photoluminescence in n-Cz-Si after the implantation of erbium ions at an elevated temperature and subsequent implantation of oxygen ions at... 
Physics | Magnetism, Magnetic Materials | Physics, general | PHYSICS, CONDENSED MATTER | INDUCED DEFECTS | MODEL | Silicon | Photoluminescence | PHOTOLUMINESCENCE | SILICON | MATERIALS SCIENCE | ERBIUM | OXYGEN | H CENTERS | N-TYPE CONDUCTORS | QUENCHING | TEMPERATURE DEPENDENCE | OXYGEN IONS | EMISSION SPECTRA | ION IMPLANTATION | ERBIUM IONS
Journal Article
Semiconductors, ISSN 1063-7826, 2/2016, Volume 50, Issue 2, pp. 252 - 256
The electroluminescence (EL) in n +–p–p + light-emitting-diode (LED) structures based on Si irradiated with electrons and annealed at high temperature is... 
Physics | Magnetism, Magnetic Materials | Physics, general | Annealing | Light-emitting diodes | Optoelectronics industry | Analysis | Epitaxy | Electrons | CHEMICAL VAPOR DEPOSITION | PHOSPHORUS | BORON | ANNEALING | ELECTRONS | SILICON | LIGHT EMITTING DIODES | MATERIALS SCIENCE | CONCENTRATION RATIO | ELECTROLUMINESCENCE | P-TYPE CONDUCTORS | LAYERS | DIAGRAMS | IRRADIATION | DOPED MATERIALS | POLYCRYSTALS
Journal Article
Technical Physics Letters, ISSN 1063-7850, 1/2017, Volume 43, Issue 1, pp. 50 - 52
The implantation of 85-keV fluorine ions at a dose of 8.3 × 1014 cm–2 into single crystal Si does not lead to formation of an amorphous layer. Subsequent... 
Physics | Classical and Continuum Physics | LUMINESCENCE | PHYSICS, APPLIED | Annealing | Silicon | Fluorides | Photoluminescence | Single crystals
Journal Article
physica status solidi (c), ISSN 1862-6351, 01/2015, Volume 12, Issue 1‐2, pp. 84 - 88
The depth distribution of light‐emitting centers of the D1 dislocation‐related photoluminescence line (∼ 1.5 μm) in silicon implanted with Si + ions and... 
silicon | ion doping | ion implantation | dislocation‐related luminescence | Ion implantation | Silicon | Dislocation-related luminescence | Ion doping | Annealing | Boron | Atmospheres | Photoluminescence | Doping | Implantation | Dislocations
Journal Article
Conference Proceeding
Semiconductors, ISSN 1063-7826, 2/2013, Volume 47, Issue 2, pp. 289 - 291
The parameters of electrically active centers formed during the high-temperature diffusion of boron and aluminum into silicon in various media are studied by... 
Physics | Magnetism, Magnetic Materials | Physics, general | PHYSICS, CONDENSED MATTER | Silicon | Comparative analysis | Ionization | Electric properties | ALUMINIUM | P-N JUNCTIONS | BORON | SPECTROSCOPY | TEMPERATURE RANGE 0400-1000 K | SILICON | CHLORINE | DIFFUSION | MATERIALS SCIENCE | HALL EFFECT | IONIZATION
Journal Article
Semiconductors, ISSN 1063-7826, 10/2013, Volume 47, Issue 10, pp. 1333 - 1335
The photoluminescence spectra of light-emitting structures based on silicon doped with erbium during the course of molecular-beam epitaxy at a temperature of... 
Physics | Magnetism, Magnetic Materials | Physics, general | OXYGEN | PHYSICS, CONDENSED MATTER | SILICON | IMPURITIES | CENTERS | ERBIUM | LAYERS | Rare earth metals | Epitaxy | Photoluminescence | MOLECULAR BEAM EPITAXY | PHOTOLUMINESCENCE | ANNEALING | MATERIALS SCIENCE | DOPED MATERIALS
Journal Article
Semiconductors, ISSN 1063-7826, 2/2013, Volume 47, Issue 2, pp. 285 - 288
Electrically active centers have been firstly studied by the capacitance transient spectroscopy technique in p-Cz-Si implanted with oxygen ions and annealed in... 
Physics | Magnetism, Magnetic Materials | Physics, general | PHYSICS, CONDENSED MATTER | DISLOCATIONS | STATES | Emissions (Pollution) | Silicon
Journal Article
Solid State Phenomena, ISSN 1012-0394, 2009, Volume 156-158, pp. 573 - 578
Conference Proceeding
Solid State Phenomena, ISSN 1662-9779, 2016, Volume 242, pp. 368 - 373
  Defect structure, electrical properties and defect-related luminescence (DRL) of light emitting diodes (LED) with the active defect-rich region produced by... 
Defect-related luminescence | Silicon | Oxygen ion implantation | DLTS
Conference Proceeding
Semiconductors, ISSN 1063-7826, 2/2014, Volume 48, Issue 2, pp. 199 - 203
The study is concerned with the effect of the additional implantation of Si samples with C+, O+, B+, P+, and Ge+ impurity ions followed by annealing at 800°C... 
Physics | Magnetism, Magnetic Materials | Physics, general | PHYSICS, CONDENSED MATTER
Journal Article
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