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basic electric elements (26) 26
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Physica Status Solidi - Rapid Research Letters, ISSN 1862-6254, 05/2012, Volume 6, Issue 5, pp. 190 - 192
Defect-band emission photoluminescence (PL) imaging with an indium-gallium-arsenide (InGaAs) camera was applied to multi-crystalline silicon (mc-Si) wafers,... 
Solar cells | Silicon | Photoluminescence imaging | Defects | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | silicon | photoluminescence imaging | MATERIALS SCIENCE, MULTIDISCIPLINARY | defects | solar cells | MULTICRYSTALLINE SILICON | Solid state physics | Scientific imaging | Silicon wafers
Journal Article
AIP Conference Proceedings, ISSN 0094-243X, 03/2012
Imaging techniques are applied to multi-crystalline silicon wafers and solar cells throughout the production process. Photoluminescence imaging, both... 
Bricks
Journal Article
2012 38th IEEE Photovoltaic Specialists Conference, ISSN 0160-8371, 06/2012, pp. 000406 - 000410
Imaging techniques can be applied to multicrystalline silicon solar cells throughout the production process, which includes as early as when the bricks are cut... 
photoconductivity | photovoltaic cells | Correlation | infrared imaging | Wavelength measurement | Imaging | impurities | Photoluminescence | charge-carrier lifetime | Silicon | Frequency measurement | Charge carrier lifetime | photoluminescence | silicon | imaging
Conference Proceeding
2012 38th IEEE Photovoltaic Specialists Conference, ISSN 0160-8371, 06/2012, pp. 002161 - 002166
Photoluminescence (PL) imaging techniques can be applied to multicrystalline silicon wafers throughout the manufacturing process. Both band-to-band PL and... 
photovoltaic cells | Correlation | Electric breakdown | infrared imaging | Heating | Green products | Imaging | impurities | Photoluminescence | Silicon | photoluminescence | silicon | imaging
Conference Proceeding
2012 38th IEEE Photovoltaic Specialists Conference, ISSN 0160-8371, 06/2012, pp. 002739 - 002743
We report on light-induced degradation (LID) of multicrystalline solar cells made of upgraded metallurgical-grade (UMG) silicon. Cells made of wafers from... 
Degradation | Temperature measurement | Upgraded metallurgical-grade silicon | performance | Photovoltaic cells | Impurities | light-induced degradation | Lighting | reliability | Silicon | Pollution measurement | solar cells
Conference Proceeding
Conference Record of the IEEE Photovoltaic Specialists Conference, ISSN 0160-8371, 2011, pp. 002231 - 002235
Conference Proceeding
2011 37th IEEE Photovoltaic Specialists Conference, ISSN 0160-8371, 06/2011, pp. 002885 - 002890
Imaging techniques are applied to multi-crystalline silicon bricks, wafers at various process steps, and finished solar cells. Photoluminescence (PL) imaging... 
Cameras | Correlation | Silicon | Impurities | Surface treatment
Conference Proceeding
2012 38th IEEE Photovoltaic Specialists Conference, ISSN 0160-8371, 06/2012, pp. 002359 - 002361
The industry is becoming critically sensitive to solar energy delivered in kilowatt-hours rather than in kilowatt at illumination peak intensity. This is... 
Resistance | solar modules | shunt resistance | Photovoltaic cells | Lighting | Silicon | performance ratio | Mathematical model | Electrical resistance measurement | emitter | Standards | low light | photovoltaic cells | silicon
Conference Proceeding
2011 37th IEEE Photovoltaic Specialists Conference, ISSN 0160-8371, 06/2011, pp. 000069 - 000074
Photoluminescence (PL) imaging is used to detect areas in multi-crystalline silicon that appear dark in band-to-band imaging due to high recombination.... 
Temperature measurement | Temperature dependence | Silicon | Photovoltaic cells | Imaging | Photoluminescence
Conference Proceeding
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