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Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 06/2011, Volume 83, Issue 24
The homoepitaxial growth of m-plane (1100) GaN was investigated by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions. The surface... 
CRYSTAL GROWTH | SUBSTRATES | DIFFUSION BARRIERS | MATERIALS SCIENCE | NONMETALS | ANISOTROPY | LAYERS | ELEMENTS | EPITAXY | MOLECULAR BEAM EPITAXY | PLASMA | GALLIUM COMPOUNDS | NITROGEN | NITROGEN COMPOUNDS | NITRIDES | CRYSTAL GROWTH METHODS | PNICTIDES | GALLIUM NITRIDES | SURFACES
Journal Article
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, ISSN 2166-2746, 2013, Volume 31, Issue 3
The growth of N-polar (In, Ga)N structures by plasma-assisted molecular beam epitaxy is studied. (In, Ga)N multiple quantum well samples with atomically smooth... 
PHYSICS, APPLIED | GAN | GROWTH | NANOSCIENCE & NANOTECHNOLOGY | FACE | DEPENDENCE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Physics Express, ISSN 1882-0778, 07/2019, Volume 12, Issue 7, p. 72003
Journal Article
PHYSICAL REVIEW B, ISSN 1098-0121, 06/2011, Volume 83, Issue 24
The homoepitaxial growth of m-plane (1 (1) over bar 00) GaN was investigated by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions. The... 
MBE | PHYSICS, CONDENSED MATTER | SURFACE RECONSTRUCTIONS | DIODES | ELECTROSTATIC FIELDS | MORPHOLOGY | NITRIDE SEMICONDUCTORS FREE
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 01/2018, Volume 482, p. 56
Doping of Ga(Al)N layers by plasma-assisted molecular beam epitaxy in Ga-rich conditions on c-plane bulk GaN substrates was studied. Ga(Al)N samples, doped... 
Studies | Rates | Gallium nitrides | Aluminum | Doping | Molecular beam epitaxy | Silicon | Magnesium | Substrates | Mercury cadmium telluride epitaxy
Journal Article
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, ISSN 1071-1023, 05/2011, Volume 29, Issue 3, pp. 03C135 - 03C135-5
Homoepitaxial growth of m -plane GaN ( 1 1 ¯ 00 ) as a function of substrate miscut and temperature was studied by plasma assisted molecular beam epitaxy... 
NANOSCIENCE & NANOTECHNOLOGY | PHYSICS, APPLIED | SURFACES | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal Article
Applied Physics Express, ISSN 1882-0778, 09/2016, Volume 9, Issue 9, p. 92103
A novel design consisting of a thick InGaN waveguide is proposed to fully eliminate leakage to the GaN substrate in nitride laser diodes. The design is based... 
SEMICONDUCTOR-LASERS | PHYSICS, APPLIED | ALGAN
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 01/2018, Volume 482, pp. 56 - 60
Doping of Ga(Al)N layers by plasma-assisted molecular beam epitaxy in Ga-rich conditions on c-plane bulk GaN substrates was studied. Ga(Al)N samples, doped... 
A1. Doping | A3. Molecular beam epitaxy | B1. Nitrides | B1. Gallium nitride | Nitrides | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | Doping | Molecular beam epitaxy | CRYSTALLOGRAPHY | Gallium nitride | Liquors | Gallium nitrate | Epitaxy
Journal Article
Applied Surface Science, ISSN 0169-4332, 08/2019, Volume 484, pp. 771 - 780
The stability of the Nitrogen-polar (000-1) surface of single-crystal bulk GaN substrates is studied for layers grown by plasma-assisted molecular beam epitaxy... 
Molecular beam epitaxy | Nitrides | Step meandering | Ehrlich-Schwoebel barrier | Crystal morphology | Crystal growth modeling | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | STABILITY | CHEMISTRY, PHYSICAL | GROWTH | EQUILIBRIUM | MATERIALS SCIENCE, COATINGS & FILMS | Monte Carlo method | Liquors | Analysis | Epitaxy
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 09/2016, Volume 120, Issue 12, p. 125307
We investigate designed InN/GaN superlattices (SLs) grown by plasma-assisted molecular beam epitaxy on c-plane GaN templates in situ by line-of-sight... 
LIGHT-EMITTING-DIODES | INDIUM INCORPORATION | PHYSICS, APPLIED | INGAN | MOLECULAR-BEAM EPITAXY | GROWTH | SURFACE | INN/GAN QUANTUM-WELLS | X-RAY-SCATTERING | DIFFRACTION | STRAIN | Usage | Diffraction | Transmission electron microscopes | X-rays | Research | Superlattices as materials | Mass spectrometry
Journal Article
Applied Physics Express, ISSN 1882-0778, 03/2018, Volume 11, Issue 3, p. 34103
We demonstrate true-blue 450 nm tunnel junction (TJ) laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy (PAMBE). The absence of hydrogen during... 
ATOMIC-HYDROGEN | PHYSICS, APPLIED | GAN | GALLIUM
Journal Article
Applied Physics Express, ISSN 1882-0778, 03/2015, Volume 8, Issue 3, p. 32103
The influence of InxGa(1-x)N waveguide on the properties of blue (lambda = 450 nm) laser diodes grown by plasma-assisted molecular beam epitaxy was studied.... 
GAN | PHYSICS, APPLIED | GAIN
Journal Article
SUPERLATTICES AND MICROSTRUCTURES, ISSN 0749-6036, 09/2019, Volume 133, p. 106209
In this work we investigate InGaN/GaN short period superlattices (SPSLs) grown on (0001) GaN and on relaxed In0.2Ga0.8N buffers with varying degree of plastic... 
LIGHT-EMITTING-DIODES | Nitrides | PHYSICS, CONDENSED MATTER | Relaxed InGaN | GaN | Quantum wells | Lattice mismatch | Photoluminescence | Molecular beam epitaxy | InN/GaN superlattices
Journal Article
ACS PHOTONICS, ISSN 2330-4022, 08/2019, Volume 6, Issue 8, pp. 1963 - 1971
Blue and violet light-emitting devices based on III-nitrides caused an ongoing revolution in general lighting. One of the highly deliberated discussions in... 
PHYSICS, CONDENSED MATTER | green gap | PHYSICS, APPLIED | SINGLE | ELECTRIC-FIELD | INGAN | WELL | MATERIALS SCIENCE, MULTIDISCIPLINARY | quantum wells | NANOSCIENCE & NANOTECHNOLOGY | light-emitting diodes | photonic devices | LIFETIME | GAN | III-nitrides | piezoelectric polarization | DIODES | OPTICS | CRITICAL THICKNESS | EMISSION
Journal Article
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