X
Search Filters
Format Format
Subjects Subjects
Subjects Subjects
X
Sort by Item Count (A-Z)
Filter by Count
diffusion (30) 30
silicon (28) 28
computer simulation (23) 23
chemistry, physical (22) 22
physics, applied (16) 16
physics, atomic, molecular & chemical (15) 15
materials science, multidisciplinary (14) 14
dynamics (12) 12
index medicus (12) 12
physics, condensed matter (12) 12
czochralski silicon (11) 11
simulation (10) 10
systems (10) 10
computer-simulation (9) 9
kinetics (9) 9
molecular dynamics (9) 9
monte carlo method (9) 9
thermodynamics (9) 9
crystallization (8) 8
defects (8) 8
germanium (8) 8
molecular-dynamics (8) 8
physics, multidisciplinary (8) 8
analysis (7) 7
configurational entropy (7) 7
crystals (7) 7
evolution (7) 7
growth (7) 7
nucleation (7) 7
point defects (7) 7
voids (7) 7
clusters (6) 6
crystalline silicon (6) 6
extended defects (6) 6
intrinsic point-defects (6) 6
mathematical models (6) 6
model (6) 6
oxygen precipitation (6) 6
polymer science (6) 6
substrates (6) 6
usage (6) 6
algorithms (5) 5
axial temperature-gradient (5) 5
colloids (5) 5
crystal-growth (5) 5
czochralski-grown silicon (5) 5
deposition (5) 5
dna (5) 5
dna - chemistry (5) 5
flow (5) 5
humans (5) 5
microdefect formation (5) 5
models (5) 5
monte carlo methods (5) 5
point-defects (5) 5
annealing (4) 4
blood-coagulation (4) 4
carbon (4) 4
coagulation (4) 4
colloids - chemistry (4) 4
dependence (4) 4
energetics (4) 4
molecular dynamics simulation (4) 4
multicrystalline silicon (4) 4
multiresolution analysis (4) 4
nanoscience & nanotechnology (4) 4
particles (4) 4
quantum dots (4) 4
statistical-mechanics (4) 4
stresses (4) 4
thrombin (4) 4
transformations (4) 4
111 dislocation loops (3) 3
adsorption (3) 3
anisotropy (3) 3
arrays (3) 3
article (3) 3
atomic deposition (3) 3
blood (3) 3
building-blocks (3) 3
classical and quantum mechanics, general physics (3) 3
colloidal clusters (3) 3
complex structures (3) 3
computer science, interdisciplinary applications (3) 3
computerized simulation (3) 3
configurations (3) 3
directional solidification (3) 3
dislocation loops (3) 3
electrochemistry (3) 3
elementhalbleiter (3) 3
empirical analysis (3) 3
entropy (3) 3
fragmentation (3) 3
free energy (3) 3
grain boundaries (3) 3
hemostasis (3) 3
hydrodynamics (3) 3
impurities (3) 3
interstitial oxygen (3) 3
interstitials (3) 3
more...
Language Language
Publication Date Publication Date
Click on a bar to filter by decade
Slide to change publication date range


Journal of Applied Physics, ISSN 0021-8979, 09/2015, Volume 118, Issue 9
The segregation behavior of carbon and oxygen atoms at various silicon grain boundaries was studied using a combination of atomistic simulation and analytical... 
Grain boundaries | Stress concentration | Computer simulation | Mechanical properties | Regression analysis | Carbon | Free energy | Multilayers | Oxygen atoms | Langmuir-Blodgett films | Flux density | Impurities | Stress distribution | Isotherms | Correlation analysis | Binding energy | Silicon
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 04/2019, Volume 125, Issue 16
A quantitative continuum model for oxide precipitation in silicon is presented that accounts for vacancy absorption and shape change as mechanisms of... 
Annealing | Electronic structure | Global optimization | Silicon wafers | Nucleation | Parameters | Continuum modeling | Benchmarks | Mathematical models | Regression analysis | Free energy | Silicon dioxide
Journal Article
The Journal of Chemical Physics, ISSN 0021-9606, 12/2016, Volume 145, Issue 23, p. 234104
The lattice kinetic Monte Carlo (LKMC) method is studied in the context of Brownian particles subjected to drift forces, here principally represented by... 
GEL-ELECTROPHORESIS | PARTICLES | CRYSTAL-GROWTH | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | DYNAMICS | CHEMISTRY, PHYSICAL | COMPUTER-SIMULATION | DIFFUSION | FLOW | Monte Carlo method | Error analysis | Computational fluid dynamics | Computer simulation | Fluid flow | Drift | Error correction | Computing time | Brownian movements | Monte Carlo simulation
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 12/2017, Volume 122, Issue 22
The diffusivity of carbon atoms in liquid silicon and their equilibrium distribution between the silicon melt and crystal phases are key, but unfortunately not... 
Impurities | Continuum modeling | Computer simulation | Melt temperature | Silicon | Diffusion | Coefficients | Carbon | Rangefinding | Solidification
Journal Article
The Journal of Chemical Physics, ISSN 0021-9606, 04/2019, Volume 150, Issue 14, p. 144503
Journal Article
AMERICAN JOURNAL OF PHYSIOLOGY-HEART AND CIRCULATORY PHYSIOLOGY, ISSN 0363-6135, 07/2019, Volume 317, Issue 1, pp. H73 - H86
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 02/2017, Volume 121, Issue 6
A recently demonstrated approach for creating structured compositional gradients in the near-surface region of SiGe substrates is studied parametrically using... 
Quantum confinement | Stresses | Parametric analysis | Computer simulation | Quantum dots | Indenters | Substrates | Compressive properties | Germanium | Arrays | Diffusion | Configurations | Monte Carlo simulation | Silicon germanides
Journal Article
Nature Communications, ISSN 2041-1723, 02/2017, Volume 8, Issue 1, p. 14173
Future optical materials promise to do for photonics what semiconductors did for electronics, but the challenge has long been in creating the structure they... 
PARTICLES | MULTIDISCIPLINARY SCIENCES | NANOPARTICLE SUPERLATTICES | DNA-COATED COLLOIDS | PHOTONIC CRYSTALS | LATTICE | TRANSFORMATIONS
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2007, Volume 303, Issue 1, pp. 5 - 11
A multiscale computational framework is presented for modeling and simulation of point-defect aggregation in crystalline silicon. Large-scale molecular... 
A1. Configurational entropy | A1. Multiscale simulation | A1. Point defects | B1. Silicon | A1. Voids | point defects | MICRODEFECT FORMATION | configurational entropy | ENERGETICS | CRYSTALLOGRAPHY | multiscale simulation | SIMULATION | voids | silicon | EVOLUTION | CLUSTERS | CZOCHRALSKI SILICON | CRYSTALS | DYNAMICS | SYSTEMS | DIFFUSION
Journal Article
Nature Communications, ISSN 2041-1723, 2012, Volume 3, Issue 1, p. 1209
Many crystals, such as those of metals, can transform from one symmetry into another having lower free energy via a diffusionless transformation. Here we... 
MULTIDISCIPLINARY SCIENCES | NANOPARTICLE SUPERLATTICES | MARTENSITIC TRANSITION | Colloids - chemistry | Optical Imaging | Thermodynamics | DNA - chemistry | Computer Simulation | Crystallography, X-Ray | Diffusion | Phase Transition | Crystallization - methods
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2015, Volume 107, Issue 7
While vertical stacking of quantum well and dot structures is well established in heteroepitaxial semiconductor materials, manipulation of quantum barriers in... 
Patterning | Annealing | Semiconductor materials | Computer simulation | Stress transfer | Quantum wells | Film thickness | Substrates | Quantum phenomena | Compressive properties | Mechanical presses | Barriers | Arrays | Nanoindenters | Silicon germanides
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 04/2015, Volume 117, Issue 13
We study computationally the formation of thermodynamics and morphology of silicon self-interstitial clusters using a suite of methods driven by a recent... 
Order-disorder transformations | Computer simulation | Morphology | Clusters | Silicon | Dislocation loops | Parameterization | Configurations | Empirical analysis
Journal Article
ISSN 1744-683X, 10/2017, Volume 13, Issue 39, pp. 798 - 715
Recent experimental and theoretical studies demonstrate that prefabricated micron-scale colloidal clusters functionalized with DNA oligomers offer a practical... 
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 04/2019, Volume 125, Issue 16, p. 165705
A quantitative continuum model for oxide precipitation in silicon is presented that accounts for vacancy absorption and shape change as mechanisms of... 
MICRODEFECT FORMATION | PHYSICS, APPLIED | OXIDE | KINETICS | SIZE | CZOCHRALSKI-GROWN SILICON | COMPUTER-SIMULATION | ELASTIC STRAIN-ENERGY | NUCLEATION | MORPHOLOGY
Journal Article
ACS Nano, ISSN 1936-0851, 11/2015, Volume 9, Issue 11, pp. 10817 - 10825
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2013, Volume 114, Issue 8, p. 83505
Although multicrystalline silicon (mc-Si) is currently the most widely used material for fabricating photovoltaic cells, its electrical properties remain... 
GRAIN-BOUNDARIES | MOLECULAR-DYNAMICS | PHYSICS, APPLIED | ELECTRICAL-PROPERTIES | POLYCRYSTALLINE SILICON | EXTENDED DEFECTS | COMPUTER-SIMULATION | TIGHT-BINDING | CRYSTALLINE SILICON | METAL IMPURITIES | MULTICRYSTALLINE SILICON | Grain boundaries | Silicon compounds | Thermal properties | Measurement | Usage | Analysis | Optical properties | Molecular dynamics | Surface energy
Journal Article
Nature Materials, ISSN 1476-1122, 01/2009, Volume 8, Issue 1, pp. 52 - 55
Journal Article
No results were found for your search.

Cannot display more than 1000 results, please narrow the terms of your search.