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by Zhu, M and Ren, K and Song, ZT
MRS BULLETIN, ISSN 0883-7694, 09/2019, Volume 44, Issue 9, pp. 715 - 720
Journal Article
Nature Communications, ISSN 2041-1723, 07/2014, Volume 5, Issue 1, p. 4086
To date, slow Set operation speed and high Reset operation power remain to be important limitations for substituting dynamic random access memory by phase... 
SPEED | DYNAMICS | MEDIA | UNIVERSAL MEMORY | MULTIDISCIPLINARY SCIENCES
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2019, Volume 115, Issue 13
Phase change memory has high potential for next-generation nonvolatile memory technology. The effect of lower layer Sb2Te (ST) on the crystallization process... 
Computer memory | Nucleation | Crystallization | Phase transitions
Journal Article
Surface & Coatings Technology, ISSN 0257-8972, 11/2018, Volume 353, p. 309
Semiconductor manufacturing has reached sub-10-nm technology nodes, and nanoscale gap filling has become an emergency critical requirement for memory with high... 
Energy consumption | Power consumption | Process parameters | Atoms & subatomic particles | Physical vapor deposition | Etching | Overhang | Chemical vapor deposition | Sputtering | Nodes
Journal Article
AIP Advances, ISSN 2158-3226, 12/2014, Volume 4, Issue 12, pp. 127157 - 127157-6
The Er3+ doped Bi5TiNbWO15 ceramics have been synthesized using conventional solid-state reaction techniques. The crystal structure, ferroelectric properties,... 
Temperature sensors | Upconversion | Temperature | Ferroelectricity | Ferroelectric materials | Emission analysis | Fluorescence | Bismuth compounds | Ceramics | Tungstates | Chemical synthesis | Crystal structure
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2018, Volume 112, Issue 7
The nonlinear resistance change and small bit resolution of phase change memory (PCM) under identical operation pulses will limit its performance as a synaptic... 
Computer memory | Seeds | Neural networks | Phase change | Crystallization | Antimony | Phase transitions | Tellurium
Journal Article
Journal of Materials Science: Materials in Electronics, ISSN 0957-4522, 11/2019, Volume 30, Issue 22, pp. 20037 - 20042
Ovonic memory switching (OMS) and ovonic threshold switching (OTS) are the most attractive characteristics of the chalcogenides, where the former implements... 
Optical and Electronic Materials | Characterization and Evaluation of Materials | Materials Science | Nanotechnology | Computer storage devices | Green technology | Electric properties | Chalcogenides | Phase change materials | Thickness | Diffusion layers | Power consumption | Energy dissipation | Data storage | Power efficiency | Reliability | Carbon | Switching | Selectors
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2017, Volume 111, Issue 25
A memory cell composed of a selector device and a storage device is the basic unit of phase change memory. The threshold switching effect, main principle of... 
Chalcogenides | Computer memory | Electric potential | Ion implantation | Amorphous materials | Phase transitions | Selectors | Switching | Solid phases
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2014, Volume 104, Issue 5, p. 53119
Compared with pure Sb2Te3, Ti0.32Sb2Te3 (TST) phase change material has larger resistance ratio, higher crystallization temperature and better thermal... 
DEFECTS | PHYSICS, APPLIED | FILMS | Phase change materials | Computer memory | Memory devices | Crystallization | Endurance | Crystallinity | Phase transitions | Thermal stability | Crystal structure
Journal Article
NATURE COMMUNICATIONS, ISSN 2041-1723, 08/2019, Volume 10, Issue 1, pp. 3525 - 10
Doping is indispensable to tailor phase-change materials (PCM) in optical and electronic data storage. Very few experimental studies, however, have provided... 
DENSITY | MULTIDISCIPLINARY SCIENCES | CRYSTALLIZATION BEHAVIOR | DYNAMICS | TOTAL-ENERGY CALCULATIONS | COHP | PLANE-WAVE | TOOL | Grain boundaries | Crystallization | Doping | Data storage | Antimony | Electron microscopy | Thermal stability | Phase change materials | Organic chemistry | Recrystallization | Dopants | Chemical bonds | Diffusion
Journal Article
Nature Communications, ISSN 2041-1723, 11/2015, Volume 6, Issue 1, p. 10040
Phase-change memory based on Ti0.4Sb2Te3 material has one order of magnitude faster Set speed and as low as one-fifth of the Reset energy compared with the... 
THIN-FILMS | CRYSTALLIZATION | ORDER | TI-SB-TE | MULTIDISCIPLINARY SCIENCES | DYNAMICS | MEDIA | POWER | CHANGE MEMORY
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 03/2018, Volume 738, p. 145
The thermal properties of Sb-Ge superlattice-like thin films have been experimentally studied for phase change memory. The Sb-Ge superlattice-like thin films... 
Thin films | Phase change materials | Computer memory | Temperature dependence | Annealing | Superlattices | Crystallization | Interdiffusion | Superlattice structures | Threshold voltage | Thermodynamic properties | Thermal stability
Journal Article
Journal of Materials Science: Materials in Electronics, ISSN 0957-4522, 12/2019
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 05/2015, Volume 117, Issue 17
Journal Article
Journal of Materials Science: Materials in Electronics, ISSN 0957-4522, 12/2019
Journal Article
by Chen, X and Liu, XQ and Cheng, Y and Song, ZT
NPG ASIA MATERIALS, ISSN 1884-4049, 07/2019, Volume 11, Issue 1, pp. 1 - 8
Data retention ability and number of cycles are key properties of phase change materials in applications. Combining in situ heating transmission electron... 
DISORDER | METAL | COHP | MATERIALS SCIENCE, MULTIDISCIPLINARY | Phase change materials | Charge density | Transmission electron microscopy | Phases | Vacancies | Heating | Mathematical analysis | Antimony | Binary systems (materials) | Phase transitions | Thermal energy | Tellurium
Journal Article
Proceedings of the National Academy of Sciences, ISSN 0027-8424, 06/2011, Volume 108, Issue 26, pp. 10410 - 10414
Journal Article
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