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Endoscopy, ISSN 0013-726X, 2012, Volume 44, Issue 1, pp. 27 - 31
Journal Article
Endoscopy, ISSN 0013-726X, 01/2012, Volume 44, Issue 1, pp. 27 - 31
Background: Cold polypectomy techniques (without electrocautery) by means of biopsy forceps or snare are widely adopted for the removal of subcentimetric... 
Original article | SURGERY | ADVANCED NEOPLASIA | COLORECTAL-CANCER | SIZE | PREVENTION | CT COLONOGRAPHY | COMPLICATIONS | GASTROENTEROLOGY & HEPATOLOGY
Journal Article
Journal Article
Journal Article
Endoscopy, ISSN 0013-726X, 07/2010, Volume 42, Issue 7, pp. 532 - 535
Background and study aim: Endoscopic treatment of Zenker's diverticulum has been successfully reported over the last 10 years using different approaches. The... 
Original article | SURGERY | GASTROENTEROLOGY & HEPATOLOGY | MANAGEMENT | Zenker Diverticulum - complications | Prospective Studies | Humans | Middle Aged | Male | Treatment Outcome | Deglutition Disorders - therapy | Aged, 80 and over | Deglutition Disorders - etiology | Female | Aged | Esophagoscopy - methods | Zenker Diverticulum - therapy
Journal Article
IEEE Journal of the Electron Devices Society, ISSN 2168-6734, 2018, Volume 6, Issue 1, pp. 1033 - 1040
A half SRAM cell with strained Si nanowire complementary tunnel-FETs (TFETs) was fabricated and characterized to explore the feasibility and functionality of... 
TFETs | PIN photodiodes | Random access memory | Logic gates | Silicon | Inverters | tunnel FET | static noise margins | SRAM | LOGIC | FIELD-EFFECT TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC | Semiconductor devices | Computer simulation | Circuits | Field effect transistors | Bias | Stability analysis | Nanowires | Butterflies | Curves
Journal Article
Digestive and Liver Disease, ISSN 1590-8658, 2013, Volume 45, pp. S179 - S180
Journal Article
Solid State Electronics, ISSN 0038-1101, 01/2016, Volume 115, pp. 152 - 159
In this work, strained Si (sSi) nanowire array of n-TFETs with gates all around (GAA) yielding ON-currents of 5 μA/μm at a supply voltage = 0.5 V are... 
Inverter | Gate-all-around | C-TFET | Analog performance | Si nanowire TFET | Subthreshold slope | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | TUNNEL-FET | SILICON | FIELD-EFFECT TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal Article