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by Ogihara, Toshio and Saruta, Takao and Rakugi, Hiromi and Saito, Ikuo and Shimamoto, Kazuaki and Imaizumi, Tsutomu and Higaki, Jitsuo and Katayama, Shigehiro and Umemura, Satoshi and Hayashi, Koichi and Odawara, Masato and Tanahashi, Norio and Morita, Satoshi and Teramukai, Satoshi and Arima, N and Bando, Y and Fukuda, M and Fukuda, S and Futamura, Y and Hirakawa, Y and Imamura, A and Ito, O and Iwa, T and Izumi, J and Kanematsu, K and Kato, Y and Kawata, Y and Kuwabara, S and Kuzuya, M and Mitsuguchi, F and Murohara, T and Narita, T and Negi, K and Okuma, K and Ozaki, N and Sato, K and Sawada, T and Suezawa, M and Suzuki, Y and Takahashi, R and Tanaka, N and Watanuki, H and Yamada, K and Yoshikane, M and Goto, M and Ishida, Y and Takahashi, K and Yashima, N and Abe, Y and Higashino, H and Kaizuka, M and Minami, O and Ogiu, Y and Sasaki, T and Sato, A and Takahashi, H and Tanabe, K and Inoya, H and Iyo, T and Sano, M and Shishikura, T and Takahara, H and Takano, M and Takemura, T and Yamamoto, S and Yonemitsu, Y and Igase, M and Kimoto, S and Kohno, K and Oonishi, T and Saeki, H and Sunayama, T and Watanabe, H and Watanabe, K and Lau, Alan H. C and Eguchi, H and Fujino, M and Fukui, J and Gondo, T and Hirooka, Y and Inou, T and Jinnouchi, T and Kadokami, T and Kai, H and Kameo, H and Kaneyuki, M and Kishikawa, H and Maeda, S and Matsumoto, T and Matsuo, S and Miki, S and Miyagi, J and Miyauchi, T and Nagashima, M and Nagata, S and Nakamura, R and Noda, K and Nohara, M and Ohta, Y and Saku, K and ...
Journal of Hypertension, ISSN 0263-6352, 10/2014, Volume 32, Issue 10, pp. 2054 - 2063
Journal Article
Journal of Physics Condensed Matter, ISSN 0953-8984, 09/2016, Volume 28, Issue 44, p. 444001
Potassium-doped picene (K(3.0)picene) with a superconducting transition temperature (TC) as high as 14 K at ambient pressure has been prepared using an... 
hydrocarbon | superconductivity | picene | PRESSURE | PHYSICS, CONDENSED MATTER | FIELD-EFFECT TRANSISTORS
Journal Article
The New England Journal of Medicine, ISSN 0028-4793, 05/2017, Volume 376, Issue 18, pp. 1713 - 1722
Journal Article
Diamond & Related Materials, ISSN 0925-9635, 2008, Volume 17, Issue 4, pp. 628 - 632
The integration of low dielectric constant (low- K) interlayers and Cu wiring is necessary to produce next-generation LSI devices. Low- K films of porous type... 
Water | Dielectric constant | TDS | BCN | Moisture | Low- K | Low-K | ELECTRON-AFFINITY | BORON | low-K | MATERIALS SCIENCE, MULTIDISCIPLINARY | CARBON NITRIDE FILM | moisture | water | dielectric constant
Journal Article
Diamond & Related Materials, ISSN 0925-9635, 2009, Volume 18, Issue 5, pp. 1048 - 1051
Low dielectric constant ( k) materials for the ULSI interconnect insulator are required to meet the fast development of high-speed devices. We have... 
Young modulus | Boron nitride | BCN | Methyl | Interconnection | Low- k | Low-k | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | DIELECTRIC-CONSTANT | MATERIALS SCIENCE, MULTIDISCIPLINARY | MECHANICAL-PROPERTIES | MATERIALS SCIENCE, COATINGS & FILMS | Plasma physics
Journal Article
Diamond and Related Materials, ISSN 0925-9635, 05/2010, Volume 19, Issue 5-6, pp. 507 - 509
Methyl-BCN is an attractive low-k material for the fabrication of next generation LSI device system. This paper describes dry etching of methyl-BCN film in... 
Dry etching | Low-k | Methyl-BCN | MATERIALS SCIENCE, MULTIDISCIPLINARY | CARBON NITRIDE FILM | C4F8 | EMISSION
Journal Article
by Taniguchi, Y and Takahashi, Y and Toba, T and Yamada, S and Yokoi, K and Kobayashi, S and Okajima, S and Shimane, A and Kawai, H and Yasaka, Y and Smanio, P and Oliveira, M. A and Machado, L and Cestari, P and Medeiros, E and Fukuzawa, S and Okino, S and Ikeda, A and Maekawa, J and Ichikawa, S and Kuroiwa, N and Yamanaka, K and Igarashi, A and Inagaki, M and Patel, K and Mahan, M and Ananthasubramaniam, K and Mouden, M and Yokota, S and Ottervanger, J and Knollema, S and Timmer, J and Jager, P and Padron, K and Peix, A and Cabrera, L and Pena Bofill, V and Valera, D and Rodriguez Nande, L and Carrillo Hernandez, R and Mena Esnard, E and Fernandez Columbie, Y and Bertella, E and Baggiano, A and Mushtaq, S and Segurini, C and Loguercio, M and Conte, E and Beltrama, V and Petulla', M and Andreini, D and Pontone, G and Guzic Salobir, B and Dolenc Novak, M and Jug, B and Kacjan, B and Novak, Z and Vrtovec, M and Volpato, V and Formenti, A and Pepi, M and Ajanovic, R and Husic-Selimovic, A and Zujovic-Ajanovic, A and Mlynarski, R and Mlynarska, A and Golba, K and Sosnowski, M and Ameta, D and Goyal, M and Kumar, D and Chandra, S and Sethi, R and Puri, A and Dwivedi, S. K and Narain, V. S and Saran, R. K and Nekolla, S and Rischpler, C and Nicolosi, S and Langwieser, N and Dirschinger, R and Laugwitz, K and Schwaiger, M and Goral, J. L and Napoli, J and Forcada, P and Zucchiatti, N and Damico, A and Olivieri, D and Lavorato, M and Dubesarsky, E and Montana, O and Salgado, C and Jimenez-Heffernan, A and Ramos-Font, C and Lopez-Martin, J and Sanchez De Mora, E and Lopez-Aguilar, R and Manovel, A and ...
European Heart Journal - Cardiovascular Imaging, ISSN 2047-2404, 05/2015, Volume 16, Issue suppl 1, pp. i11 - i28
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 04/2008, Volume 47, Issue 4, pp. 2492 - 2495
Low-dielectric-constant (k) materials for large-scale integration (LSI) interconnect insulators are required to meet the fast development of high-speed... 
Young modulus | Low-k | Bcn film | Methyl boron nitride | Copper | ELECTRON-AFFINITY | PHYSICS, APPLIED | methyl boron nitride | low-k | copper | BCN film | young modulus
Journal Article
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, ISSN 0021-4922, 04/2007, Volume 46, Issue 4 B, pp. 2006 - 2010
The diffusion of Ag and Cu in low-k films (BCN and SiOC) was investigated for future interconnections. From the depth profiles obtained by glow discharge... 
Silver diffusion | Low-k | Interconnection | GDS | BCN film | Copper | SiOC | PHYSICS, APPLIED | low-k | interconnection | copper | ULSI | silver diffusion | ELECTROMIGRATION RESISTANCE | NITRIDE
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 04/2008, Volume 47, Issue 4, pp. 2425 - 2427
Achieving high-performance and low-stand-by-power applications requires the integration of new metal gate materials and high-k dielectrics into LSI devices... 
Galvanic corrosion | Wet process | IPA | High-k | Metal gate | high-k | PHYSICS, APPLIED | HIF | MECHANISM | SILICON | wet process | galvanic corrosion | metal gate
Journal Article
Journal of the American College of Cardiology, ISSN 0735-1097, 09/2019, Volume 74, Issue 9, pp. 1177 - 1186
Journal Article
Journal of the American College of Cardiology, ISSN 0735-1097, 01/2020, Volume 75, Issue 2, pp. 133 - 144
Journal Article
Circulation Journal, ISSN 1346-9843, 2019, Volume 83, Issue 4, pp. 727 - 735
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2007, Volume 91, Issue 13, pp. 132904 - 132904-3
The effects of lanthanum incorporation into Hf O 2 dielectrics were studied using first-principles total energy calculations. The author's computational result... 
Journal Article
NATURE COMMUNICATIONS, ISSN 2041-1723, 10/2017, Volume 8, Issue 1, pp. 1 - 6
Topological nodal line semimetals, a novel quantum state of materials, possess topologically nontrivial valence and conduction bands that touch at a line near... 
SEMIMETAL | SURFACE ALLOY | MULTIDISCIPLINARY SCIENCES | DISCOVERY | Conduction bands | Conduction | Spectroscopy | Metalloids | Band structure of solids | Fermions | Monolayers | Reflection | Experimental research | Photoelectric emission | Physical properties | Symmetry | MATERIALS SCIENCE
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 04/2009, Volume 48, Issue 4, p. 4
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2007, Volume 91, Issue 13, p. 132904
The effects of lanthanum incorporation into HfO2 dielectrics were studied using first-principles total energy calculations. The author's computational result... 
1ST-PRINCIPLES | PHYSICS, APPLIED | OXIDE
Journal Article