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Applied Physics Letters, ISSN 0003-6951, 02/2017, Volume 110, Issue 9, p. 91109
We study the effect of surface passivation on pseudomorphic multiple-quantum-well Ge0.97Sn0.03/Ge p-i-n photodetectors. A combination of ozone oxidation to... 
PHYSICS, APPLIED | Temperature dependence | Bias | Quantum wells | Photometers | Ozone | Passivity | Aluminum oxide | Atomic layer deposition | Dark current | Organic light emitting diodes | Oxidation | Germanium oxides | Activation energy
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2011, Volume 99, Issue 14, pp. 142108 - 142108-3
High hole mobility enhancement of strained SiGe-on-insulator (sSGOI) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) has been achieved... 
MOSFET | DEFECTS | PHYSICS, APPLIED | silicon-on-insulator | ULTRATHIN | MOBILITY | ALLOYS | Ge-Si alloys | hole mobility | condensation | hole density | LAYERS
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 06/2015, Volume 54, Issue 6, p. 6
CMOS utilizing high-mobility III-V/Ge channels on Si substrates is expected to be one of the promising devices for high-performance and low power advanced LSIs... 
CARRIER-TRANSPORT | SELECTIVE-AREA GROWTH | PHYSICS, APPLIED | THIN-BODY | ELECTRICAL-PROPERTIES | INTERFACE TRAPS | INVERSION-LAYER MOBILITY | GE-ON-INSULATOR | FIELD-EFFECT TRANSISTORS | N-MOSFETS
Journal Article
Nanotechnology, ISSN 0957-4484, 10/2017, Volume 28, Issue 44, pp. 445201 - 445201
The manipulation of matter at the nanoscale enables the generation of properties in a material that would otherwise be challenging or impossible to realize in... 
memory devices | zirconia | atomic layer deposition | THIN-FILMS | NANOPARTICLES | PHYSICS, APPLIED | OXIDE | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | NANOSCIENCE & NANOTECHNOLOGY | METAMATERIALS
Journal Article
Solid State Electronics, ISSN 0038-1101, 03/2016, Volume 117, pp. 77 - 87
This paper discusses the effects of additional oxidation after Ge condensation on electrical characteristics of fully depleted germanium-on-insulator (FDGOI)... 
CARRIER-TRANSPORT | CMOS | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | INTERFACE | MOBILITY | SUBSTRATE | GROWTH | DEEPLY SCALED NMOS | TECHNOLOGY | LAYERS | ENGINEERING, ELECTRICAL & ELECTRONIC | Metal oxide semiconductor field effect transistors | Oxidation-reduction reaction | Oxides | Analysis | Electric properties | Electrical engineering
Journal Article
ACS Applied Materials and Interfaces, ISSN 1944-8244, 05/2017, Volume 9, Issue 20, pp. 17201 - 17207
Drastic reduction in nickel oxide (NiOx) film resistivity and ionization potential is observed when subjected to tiltraYiolet (UV)/ozone (O-3) treatment. X-ray... 
nickel oxide | UV/ozone treatment | XPS | barrier height | ionization potential | CONTACT | SOLAR-CELLS | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | OXYGEN | TRANSPORT | METAL | SURFACES
Journal Article
11/2018
In this paper, we develop a complete pipeline for stain normalization, segmentation, and classification of nuclei in hematoxylin and eosin (H&E) stained breast... 
Journal Article
69th Device Research Conference, ISSN 1548-3770, 06/2011, pp. 235 - 236
Much attention has recently been paid to MOS channel materials with high mobility and resulting high injection velocity that can increase ION and reduce delay.... 
MOSFET circuits | Educational institutions | Facsimile | Aluminum | Strain
Conference Proceeding
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