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Applied Physics Letters, ISSN 0003-6951, 03/2014, Volume 104, Issue 12, p. 122104
Journal Article
Scientific Reports, ISSN 2045-2322, 07/2016, Volume 6, Issue 1, p. 29448
As scaling of conventional silicon-based electronics is reaching its ultimate limit, considerable effort has been devoted to find new materials and new device... 
CONTACTS | TRANSITION-METAL DICHALCOGENIDES | MOBILITY | MULTIDISCIPLINARY SCIENCES | INTEGRATED-CIRCUITS | GRAPHENE | MOS2 TRANSISTORS | BILAYER MOS2 | MONOLAYER | FIELD-EFFECT TRANSISTORS | ELECTRONICS
Journal Article
Journal Article
Nanotechnology, ISSN 0957-4484, 08/2018, Volume 29, Issue 42, p. 425602
The rapid cadence of MOSFET scaling is stimulating the development of new technologies and accelerating the introduction of new semiconducting materials as... 
MoS | MO-CVD | 2D materials | thin films | MONOLAYER MOS2 | PHYSICS, APPLIED | CHEMICAL-VAPOR-DEPOSITION | MoS2 | MATERIALS SCIENCE, MULTIDISCIPLINARY | 2-DIMENSIONAL MATERIALS | NANOSCIENCE & NANOTECHNOLOGY | SURFACE | DEVICES | ELECTRONICS
Journal Article
Nanoscale, ISSN 2040-3364, 08/2017, Volume 9, Issue 30, pp. 10869 - 10879
Despite the fact that two-dimensional MoS2 films continue to be of interest for novel device concepts and beyond silicon technologies, there is still a lack of... 
TRANSITION | TRANSISTORS | CONTACT | PHYSICS, APPLIED | MOBILITY | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | FETS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2014, Volume 104, Issue 12
Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials... 
P-N JUNCTIONS | SEMICONDUCTOR DEVICES | THIN FILMS | MOLYBDENUM SULFIDES | SOLAR ENERGY | PHOTOVOLTAIC EFFECT
Journal Article
Solid State Electronics, ISSN 0038-1101, 2009, Volume 53, Issue 1, pp. 30 - 35
Journal Article
Nanoscale, 08/2017, Volume 9, Issue 30, p. 10869
Despite the fact that two-dimensional MoS films continue to be of interest for novel device concepts and beyond silicon technologies, there is still a lack of... 
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2019, Volume 114, Issue 21
Spin-on-diffussant (SoD) processing as a doping technique in two-dimensional semiconductors shows a general process compatibility with materials such as MoS2... 
Semiconductors | Doping | Atomic properties | Phosphorus | Chemical vapor deposition | MOSFETs | Organic chemistry | Electrical measurement | Molybdenum disulfide | Transition metal compounds | Correlation analysis | Oxidation | Leakage current | Diffusion | Carrier density
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2019, Volume 114, Issue 21, p. 212102
Spin-on-diffussant (SoD) processing as a doping technique in two-dimensional semiconductors shows a general process compatibility with materials such as MoS2... 
WSE2 | MONO LAYER | PHYSICS, APPLIED | FILMS | MECHANISM | MOS2 | ELECTRONICS
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 07/2017, Volume 64, Issue 7, pp. 2970 - 2976
Journal Article
Nanoscale, ISSN 2040-3364, 2017, Volume 9, Issue 30, pp. 10869 - 10879
Despite the fact that two-dimensional MoS2films continue to be of interest for novel device concepts and beyond silicon technologies, there is still a lack of... 
Journal Article
International Journal of High Speed Electronics and Systems, ISSN 0129-1564, 09/2004, Volume 14, Issue 3, pp. 640 - 645
Journal Article
ECS Transactions, ISSN 1938-6737, 05/2017, Volume 77, Issue 8, pp. 3 - 8
Journal Article
IEEE Transactions on Nanotechnology, ISSN 1536-125X, 11/2012, Volume 11, Issue 6, pp. 1067 - 1072
Journal Article
71st Device Research Conference, ISSN 1548-3770, 06/2013, pp. 149 - 150
The p-n junction is the building block for nearly all modern semiconductor devices, including transistors, Lasers, and LEDs. The absence of band gap in... 
Resistance | Logic gates | Dielectrics | Graphene | Doping | P-n junctions
Conference Proceeding
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