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IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, 11/2017, Volume 23, Issue 6, pp. 1 - 7
The device characteristics of semiconductor lasers have been improved with progress in active layer structures. Carrier confinement dimension plays an... 
quantum dots | silicon-photonics | InAs | high-temperature operation | quantum dot lasers | PHYSICS, APPLIED | PHOTOLUMINESCENCE | WELL | OPTICAL-PROPERTIES | GAAS | ENGINEERING, ELECTRICAL & ELECTRONIC | 1.3 MU-M | GROWTH | THRESHOLD CURRENT-DENSITY | OPTICS | EMISSION
Journal Article
Optics Express, ISSN 1094-4087, 08/2016, Volume 24, Issue 16, pp. 18428 - 18435
We demonstrate direct modulation of an InAs/GaAs quantum dot (QD) laser on Si. A Fabry-Pérot QD laser was integrated on Si by an ultraviolet-activated direct... 
Journal Article
physica status solidi (a), ISSN 1862-6300, 04/2016, Volume 213, Issue 4, pp. 958 - 964
The strain‐compensation (SC) technique to reduce the accumulation of strain is a promising approach to increase the design flexibility as well as the... 
molecular beam epitaxy | quantum dots | semiconductor lasers | strain compensation | Lasers | Epitaxy | Analysis | Molecular beam epitaxy | Quantum dots | Gallium arsenide | Modulation | Materials science | Design analysis | Indium arsenides | Strain
Journal Article
PLoS ONE, ISSN 1932-6203, 12/2013, Volume 8, Issue 12, p. e83629
Journal Article
IEEE Photonics Technology Letters, ISSN 1041-1135, 03/2019, Volume 31, Issue 6, pp. 419 - 422
Journal Article
IEEE Photonics Technology Letters, ISSN 1041-1135, 01/2019, Volume 31, Issue 6, p. 419
Opportunities for the monolithic integration of a novel common quantum dot (QD)-active electroabsorption modulated laser are explored. An electric-field and... 
Temperature dependence | Chirp | Quantum dots | Lasers | Modulation | Electric fields
Journal Article
International Journal of Cancer, ISSN 0020-7136, 03/2007, Volume 120, Issue 6, pp. 1355 - 1363
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2013, Volume 378, pp. 627 - 630
We have progressed the growth procedure for high-density highly-uniform In(Ga)As/GaAs quantum dots (QDs) by using molecular beam epitaxy and have demonstrated... 
Quantum dots | Semiconducting gallium arsenide | Molecular beam epitaxy | Laser diodes | Arsenides | Low dimensional structures
Journal Article
IEEE Photonics Technology Letters, ISSN 1041-1135, 03/2019, Volume 31, Issue 6, pp. 419 - 422
Opportunities for the monolithic integration of a novel common quantum dot (QD)-active electroabsorption modulated laser are explored. An electric-field and... 
electroabsorption modulated laser | negative chirp | Quantum dot lasers | Absorption | Chirp | Quantum dots | Modulation | blue chirp | Distributed feedback devices | distributed feedback laser | Erbium | PHYSICS, APPLIED | 1.3 MU-M | OPTICS | SPECTRA | GAIN | DEPENDENCE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2013, Volume 378, pp. 627 - 630
We have progressed the growth procedure for high-density highly-uniform In(Ga)As/GaAs quantum dots (QDs) by using molecular beam epitaxy and have demonstrated... 
Crystal growth | Gallium arsenides | Indium gallium arsenides | Quantum dots | Gallium arsenide | Lasers | High gain | Indium arsenides
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2013, Volume 378, pp. 627 - 630
We have progressed the growth procedure for high-density highly-uniform In(Ga)As/GaAs quantum dots (QDs) by using molecular beam epitaxy and have demonstrated... 
B2. Semiconducting gallium arsenide | B1. Arsenides | A3. Molecular beam epitaxy | B3. Laser diodes | A1. Low dimensional structures | A3. Quantum dots
Journal Article
Applied Physics Express, ISSN 1882-0778, 09/2016, Volume 9, Issue 9, p. 92102
We report the first demonstration of a hybrid silicon quantum dot (QD) laser, evanescently coupled to a silicon waveguide. InAs/GaAs QD laser structures with... 
OPERATION | THRESHOLD | PHYSICS, APPLIED
Journal Article
Annals of Surgical Oncology, ISSN 1068-9265, 12/2010, Volume 17, Issue 12, pp. 3145 - 3154
Journal Article
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