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材料科学前沿:英文版, ISSN 2095-025X, 2017, Volume 11, Issue 4, pp. 344 - 352
Ga2O3 was doped into 0.95(K0.48Na0.52)NbO3-0.05LiTaO3 (KNN-LT) cera- mics and its influences on the sintering behavior, phase structure and electrical... 
Ga 2 O 3 | Materials Science, general | lead-free piezoceramics | Material Science | piezoelectric properties | sintering behavior | phase structure | FREE PIEZOELECTRIC CERAMICS | (K0.5NA0.5)NBO3 CERAMICS | BEHAVIOR | MATERIALS SCIENCE, MULTIDISCIPLINARY | ELECTRICAL-PROPERTIES | Ga2O3 | PZT | MICROSTRUCTURE
Journal Article
Journal of Southeast University (English Edition), ISSN 1003-7985, 12/2018, Volume 34, Issue 4, pp. 444 - 450
Journal Article
Zhonghua Shiyan Yanke Zazhi/Chinese Journal of Experimental Ophthalmology, ISSN 2095-0160, 07/2018, Volume 36, Issue 7, pp. 564 - 569
Journal Article
Frontiers of Materials Science, ISSN 2095-025X, 12/2017, Volume 11, Issue 4, p. 344
To access, purchase, authenticate, or subscribe to the full-text of this article, please visit this link: http://dx.doi.org/10.1007/s11706-017-0403-y... 
Sintering | Ceramics | Ceramic materials | Electric properties
Journal Article
IOP Conference Series: Materials Science and Engineering, ISSN 1757-899X, 04/2019, Volume 504, p. 12020
Journal Article
Microwave and Optical Technology Letters, ISSN 0895-2477, 10/2000, Volume 27, Issue 1, pp. 61 - 66
This paper describes a quasianalytical model for the calculation of the current–voltage characteristics of LT–GaAs and LT–Al 0.3 Ga 0.7 As MISFET devices. The... 
molecular beam epitaxy (MBE) | low‐temperature (LT)‐grown GaAs and Al | quasianalytical model | MISFETs | 0.7 | 0.3 | VOLTAGE | INSULATOR | FIELD | MESFETS | LOW-TEMPERATURE | LAYERS | ENGINEERING, ELECTRICAL & ELECTRONIC | ELECTRON-DRIFT VELOCITY | low-temperature (LT)-grown GaAs and Al0.3Ga0.7As | OPTICS
Journal Article
Nonlinear Analysis, Theory, Methods & Applications, ISSN 0362-546X, 12/2011, Volume 74, Issue 18, pp. 6981 - 6987
This paper gives an affirmative answer to Tingley's problem in the spaces L super(p)( mu ) where 0 Proving | Nonlinearity | Banach space | Subspaces
Journal Article
Physica B: Physics of Condensed Matter, ISSN 0921-4526, 2002, Volume 319, Issue 1, pp. 17 - 20
The values of the d-sublattice magnetic moment (M ) and the Gd-Fe exchange coupling parameter (A ) were derived for the R(Fe Ti ) , R(Fe Ti ) and RFe V (R =... 
Rare earth–transition metal compounds | Hybridization effects | Exchange interactions | Rare earth-transition metal compounds | exchange interactions | PHYSICS, CONDENSED MATTER | METAL COMPOUNDS | hybridization effects | rare earth-transition metal compounds
Journal Article
ACS Nano, ISSN 1936-0851, 03/2016, Volume 10, Issue 3, pp. 3198 - 3205
Low-temperature scanning tunneling microscope investigations reveal that hexabromobenzene (HBB) molecules arrange in either hexagonally closely packed (hcp)... 
Au-22×√3 | LT-STM | molecular arrangement | halogen bonding | DFT calculations | ULTRATHIN FILMS | BENZENE | RECOGNITION | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | COORDINATION NETWORKS | CHEMISTRY, MULTIDISCIPLINARY | MOLECULES | HALOGEN INTERACTIONS | GROWTH | BOND | Au-22x root 3 | SURFACES
Journal Article
Physica B: Condensed Matter (Netherlands), ISSN 0921-4526, 07/2002, Volume 319, Issue 1-4, pp. 17 - 20
The values of the d-sublattice magnetic moment (M sub d ) and the Gd-Fe exchange coupling parameter (A sub GdFe ) were derived for the R(Fe sub 1-x Ti sub x ,... 
Journal Article
dil Sanat ve Dil Dergisi, ISSN 2146-9903, 2018, Volume 7, Issue 41, pp. 79 - 89
Obuan?n k?kleri, eski Yunan M?s?r ve Orta Do?u?ya dayanmaktad?r. Obuan?n atalar? say?lan bir ?ok nefesli enstr?man, Orta Asya?da ?Zurna?, M?s?r?da ?Zamr?,... 
E?itim Bilimleri | T?rk Dili | K?lt?r & Sanat
Journal Article
Journal of Clinical Investigation, ISSN 0021-9738, 09/1998, Volume 102, Issue 6, pp. 1142 - 1151
Journal Article
ELECTRONICS LETTERS, ISSN 0013-5194, 10/1998, Volume 34, Issue 21, pp. 2066 - 2067
Noise spectroscopy has been used to assess the quality of the active layers of LT-GaAs and LT-Al-0.3,Ga-0.7,As MISFET devices using transmission line model... 
ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Proceedings of 2018 IEEE International Conference on Mechatronics and Automation, ICMA 2018, 10/2018, pp. 293 - 297
Conference Proceeding
Electronics Letters, ISSN 0013-5194, 10/1998, Volume 34, Issue 21, pp. 2066 - 2067
Journal Article
Microwave and Optical Technology Letters, ISSN 0895-2477, 10/2000, Volume 27, Issue 1, pp. 61 - 66
Journal Article
Microwave and Optical Technology Letters, ISSN 0895-2477, 10/2000, Volume 27, Issue 1, pp. 61 - 66
This paper describes a quasianalytical model for the calculation of the current voltage characteristics of L.T GaAs and L.T. Al sub(0.3)Ga sub(0.7)As MISFET... 
Journal Article
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