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Journal Article
Nanotechnology, ISSN 0957-4484, 04/2018, Volume 29, Issue 24, p. 245701
An a-SiN -based resistive random access memory (RRAM) device with a forming-free characteristic has significant potentials for the industrialization of the... 
Si dangling bonds | plasma treatment | SiN resistive switching memory
Journal Article
European Journal of Mechanics / A Solids, ISSN 0997-7538, 03/2019, Volume 74, pp. 160 - 175
Journal Article
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, ISSN 2166-2746, 07/2015, Volume 33, Issue 4
Nanocrystalline Si (nc-Si) with mean size of about 4 nm embedded in amorphous SiN film was prepared by annealing Si-rich amorphous SiN film. The film... 
RAMAN-SPECTRA | PHYSICS, APPLIED | SEMICONDUCTORS | SIZE | NANOSCIENCE & NANOTECHNOLOGY | CRYSTALLINE SILICON | ELECTROLUMINESCENCE | QUANTUM DOTS | ENGINEERING, ELECTRICAL & ELECTRONIC | CAPACITANCE-VOLTAGE | FILMS | MEMORY | CONFINEMENT
Journal Article
Sensors (Switzerland), ISSN 1424-8220, 11/2015, Volume 15, Issue 11, pp. 27930 - 27953
Analytic alignment is a type of self-alignment for a Strapdown inertial navigation system (SINS) that is based solely on two non-collinear vectors, which are... 
TRIAD | Self-alignment | Analytic alignment | Initial alignment | SINS | ELECTROCHEMISTRY | CHEMISTRY, ANALYTICAL | INSTRUMENTS & INSTRUMENTATION | analytic alignment | initial alignment | self-alignment | COARSE ALIGNMENT | Earth | Alignment | Algorithms | Mathematical analysis | Navigation systems | Self alignment | Strapdown inertial navigation | Vectors (mathematics)
Journal Article
Pacific-Basin Finance Journal, ISSN 0927-538X, 01/2013, Volume 21, Issue 1, pp. 899 - 913
Hong and Kacperczyk (2009) argue that social norms sin stocks influence investor behavior and corporate financial policies. This paper examines “sin” stocks in... 
Socially responsible investment | Corporate financial policy | Groupthink | Asset pricing | Behavioral finance | Social norms | RETURNS | RISK | CORRUPTION | CULTURE | BUSINESS, FINANCE | FINANCE | INVESTMENT | OWNERSHIP
Journal Article
Physical Review D, ISSN 1550-7998, 2005, Volume 71, Issue 11
We present a measurement of the time-dependent CP-violating asymmetries in decays of neutral B mesons to the final states D(*-/+)pi(+/-), using approximately... 
ASTRONOMY & ASTROPHYSICS | PHYSICS, PARTICLES & FIELDS | Physics - High Energy Physics - Experiment | Physics | High Energy Physics - Experiment
Journal Article
Journal Article
International Journal of Mechanics and Materials in Design, ISSN 1569-1713, 9/2019, Volume 15, Issue 3, pp. 647 - 669
Journal Article
Clinical immunology (Orlando, Fla.), ISSN 1521-6616, 3/2014, Volume 151, Issue 1, pp. 55 - 65
We used a DNA barcoding method to enable high-throughput sequencing of the cognate heavy- and light-chain pairs of expressed antibodies. We used this approach... 
Journal Article
by Xiong, ND and Jiang, SW and Li, YR and Tan, LF and Li, RG
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 12/2008, Volume 93, Issue 23, p. 232905
The Ba0.5Sr0.5TiO3(BST)/SiN bilayered thin films with a SiN layer serving as a buffer layer between the top electrode and the BST layer have been prepared onto... 
buffer layers | platinum | PHYSICS, APPLIED | thin film capacitors | silicon compounds | dielectric thin films | ELECTRODES | barium compounds | dielectric losses | FERROELECTRICS | strontium compounds | LAYERS
Journal Article
Journal of Physics: Conference Series, ISSN 1742-6588, 03/2019, Volume 1176, p. 52057
Journal Article
Arthuriana, ISSN 1078-6279, 10/2014, Volume 24, Issue 3, pp. 129 - 157
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2008, Volume 93, Issue 23
Journal Article
Journal of Information Display, ISSN 1598-0316, 07/2019, Volume 20, Issue 3, pp. 161 - 167
The mobility of pristine amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) is insufficient to meet the requirement of the future... 
dual gate | hydrogen doping | SiN | passivation | enhanced conductivity tuning | A-InGaZnO | SiNx passivation
Journal Article
Nanoscience and Nanotechnology Letters, ISSN 1941-4900, 03/2015, Volume 7, Issue 3, pp. 248 - 251
A stress modulation technology for strained 45 nm-gate CMOS is reported in this paper. In a conventional SiN strained CMOS, it has been known that the PMOS... 
SiN film | CMOS | Trench | Strained nano-device | SiN Film | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | Strained Nano-Device | NANOSCIENCE & NANOTECHNOLOGY | LAYER | Stresses | Compressive properties | Metal oxide semiconductors | Computer simulation | Modulation | Nanostructure | Channels
Journal Article
Beijing Hangkong Hangtian Daxue Xuebao/Journal of Beijing University of Aeronautics and Astronautics, ISSN 1001-5965, 09/2015, Volume 41, Issue 9, pp. 1645 - 1650
Journal Article
2000, 1st ed., ISBN 9780375409219, xxix, 359
Book
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