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Applied Surface Science, ISSN 0169-4332, 10/2015, Volume 351, pp. 704 - 708
The Cu-doped and undoped HfO films were fabricated and the effect of Cu doping concentration on resistive switching (RS) of HfO film was demonstrated. The... 
HfO | Cu film | Doping concentration | Mechanism | Resistive switching
Journal Article
Journal of Materials Science, ISSN 0022-2461, 11/2015, Volume 50, Issue 21, pp. 7043 - 7047
The Cu-doped and undoped HfO2 films were fabricated by magnetron sputtering. The effect of Cu doping on resistive switching (RS) of HfO2 film was demonstrated.... 
Polymer Sciences | Materials Science, general | Mechanics | Characterization and Evaluation of Materials | Material Science | Continuum Mechanics and Mechanics of Materials | Crystallography | THIN-FILMS | MECHANISM | MATERIALS SCIENCE, MULTIDISCIPLINARY | BEHAVIORS | High resistance | Hafnium oxide | Magnetron sputtering | Low resistance | Switching | Data storage
Journal Article
Journal of Materials Science, ISSN 0022-2461, 07/2015, Volume 50, Issue 21, pp. 7043 - 7047
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 02/2016, Volume 49, Issue 4, p. 45103
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 02/2016, Volume 49, Issue 4, pp. 45103 - 45108
The effect of Ti doping concentration on the resistive switching (RS) properties of Ti-doped HfO sub(2) samples was investigated. An x-ray photoelectron... 
Electric potential | Oxygen | Vacancies | Voltage | Doping | Titanium | Hafnium oxide | Switching
Journal Article
Journal of Materials Science, ISSN 0022-2461, 11/2015, Volume 50, Issue 21, p. 7043
Journal Article
Journal of Materials Science, ISSN 0022-2461, 11/2015, Volume 50, Issue 21, pp. 7043 - 7047
The Cu-doped and undoped HfO sub(2) films were fabricated by magnetron sputtering. The effect of Cu doping on resistive switching (RS) of HfO sub(2) film was... 
Vacancies | Multilevel | Data storage | High resistance | Hafnium oxide | Silicon | Copper | Switching
Journal Article
Applied Surface Science, ISSN 0169-4332, 10/2015, Volume 351, p. 704
Journal Article
Journal of Materials Science: Materials in Electronics, ISSN 0957-4522, 1/2019, Volume 30, Issue 1, pp. 457 - 462
Journal Article
Applied Physics A: Materials Science and Processing, ISSN 0947-8396, 07/2015, Volume 120, Issue 1, pp. 121 - 125
Journal Article
Applied Physics A: Materials Science & Processing, ISSN 0947-8396, 07/2015, Volume 120, Issue 1, p. 121
The HfO.sub.x films grown on Pt substrates were deposited at different temperatures by RF magnetron sputtering. The crystal quality of HfO.sub.x film increased... 
Bipolar disorder
Journal Article
Applied Physics A, ISSN 0947-8396, 7/2015, Volume 120, Issue 1, pp. 121 - 125
The HfO x films grown on Pt substrates were deposited at different temperatures by RF magnetron sputtering. The crystal quality of HfO x film increased with... 
Condensed Matter Physics | Operating Procedures, Materials Treatment | Optical and Electronic Materials | Characterization and Evaluation of Materials | Surfaces and Interfaces, Thin Films | Physics | Nanotechnology
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 06/2017, Volume 708, p. 23
To access, purchase, authenticate, or subscribe to the full-text of this article, please visit this link: http://dx.doi.org/10.1016/j.jallcom.2017.02.286 
Analysis | X-ray spectroscopy
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 10/2014, Volume 610, pp. 388 - 391
In this paper, first principles calculation is performed to investigate the impact of Au doping on the properties of oxygen vacancy in HfO sub(2), including... 
Gold | Vacancies | Data storage | Doping | Durability | Hafnium oxide | Formations | Devices
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 10/2014, Volume 610, p. 388
Display Omitted 
Journal Article
Journal of Materials Science: Materials in Electronics, ISSN 0957-4522, 01/2019, Volume 30, Issue 1, pp. 457 - 462
Journal Article
Journal of Materials Science: Materials in Electronics, ISSN 0957-4522, 01/2019, Volume 30, Issue 1, p. 457
The switching characteristics of rare element Ce-doped HfO.sub.x films were investigated. The effect of Ce doping on oxygen defects was analyzed by X-ray... 
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 11/2016, Volume 686, p. 669
The effect of Al doping concentration on resistive switching characteristics of Pt/Al-doped HfO.sub.x/Cu structures was investigated. According to the X-ray... 
Analysis | X-ray spectroscopy
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 11/2016, Volume 686, pp. 669 - 674
Journal Article
Materials Science in Semiconductor Processing, ISSN 1369-8001, 11/2016, Volume 54, p. 65
In this work, Ce:HfO.sub.x films were fabricated and the resistive switching characteristics were investigated. The chemical bonding states of the films were... 
Annealing | X-ray spectroscopy
Journal Article
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