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IEEE Transactions on Circuits and Systems I: Regular Papers, ISSN 1549-8328, 04/2014, Volume 61, Issue 4, pp. 1119 - 1132
Journal Article
IEEE Transactions on Circuits and Systems I: Regular Papers, ISSN 1549-8328, 03/2015, Volume 62, Issue 3, pp. 771 - 780
Journal Article
IEEE Transactions on Circuits and Systems I: Regular Papers, ISSN 1549-8328, 03/2015, Volume 62, Issue 3, pp. 844 - 853
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 10/2011, Volume 46, Issue 10, pp. 2406 - 2415
Journal Article
IEICE Transactions on Electronics, ISSN 0916-8524, 04/2016, Volume E99C, Issue 4, pp. 444 - 451
Storage-Class Memory (SCM) and NAND flash hybrid Solid-State Drive (SSD) has advantages of high performance and low power consumption compared with NAND flash... 
NAND flash memory | Solid-State Drive | Storage-Class Memory | Error correcting code | error correcting code | solid-state drive | storage-class memory | ENGINEERING, ELECTRICAL & ELECTRONIC | Data storage | Solid state devices | Error correction | Cost analysis | Cost engineering | Strength | Acceptability | Guidelines
Journal Article
Solid State Electronics, ISSN 0038-1101, 02/2014, Volume 92, pp. 63 - 69
•We analyze the effect of asymmetric coding in 2× to 4×nm NAND flash memories.•Proposed asymmetric coding strategy increases the population of the lowest VTH... 
NAND flash memory | Data-retention error | Reliability | Program disturb error | Asymmetric coding | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC | Flash memory | Asymmetry
Journal Article
Solid State Electronics, ISSN 0038-1101, 09/2015, Volume 111, pp. 129 - 140
•The effects of AEP-LDPC are investigated in a 2×nm TLC NAND Flash memory.•Compared with conventional BCH, data-retention time is extended by 12×.•AEP-LDPC can... 
Solid-state drive (SSD) | NAND Flash memory | Low-density-parity-check (LDPC) | Error-correcting code (ECC) | PHYSICS, CONDENSED MATTER | DESIGN | PHYSICS, APPLIED | CODES | FLASH | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEICE Transactions on Electronics, ISSN 0916-8524, 01/2015, Volume E98C, Issue 1, pp. 53 - 61
A design strategy (the required ECC strength and the judgment method of the dominant error mode) of error-prediction low-density parity-check (EP-LDPC)... 
LDPC | NAND flash memory | ECC | Error-correcting code | Low-density parity-check | low-density parity-check | CELL | ENGINEERING, ELECTRICAL & ELECTRONIC | Design engineering | Errors | Tables (data) | Interference | Strategy | Flash memory (computers) | Error correction | Acceptability
Journal Article
JAPANESE JOURNAL OF APPLIED PHYSICS, ISSN 0021-4922, 08/2016, Volume 55, Issue 8, p. 84201
NAND flash memory's reliability degrades with increasing endurance, retention-time and/or temperature. After a comprehensive evaluation of 1X nm triple-level... 
LDPC | PHYSICS, APPLIED
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 11/2013, Volume 48, Issue 11, pp. 2920 - 2933
Journal Article
IEICE Electronics Express, ISSN 1349-2543, 2012, Volume 9, Issue 8, pp. 779 - 794
SSDs and emerging storage class non-volatile semiconductor memories such as PCRAM, FeRAM, RRAM and MRAM have enabled innovations in various nano-scale VLSI... 
Signal processing | NAND flash memory | ECC | Storage class memory | SSD | storage class memory | signal processing | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEICE Transactions on Electronics, ISSN 0916-8524, 04/2012, Volume E95-C, Issue 4, pp. 564 - 571
Three types of electron injection scheme: both side injection scheme and self-repair one side injection scheme Type A (injection for once) and Type B... 
Disturb/write margin | 6T/8T-SRAM | Read speed | Asymmetric pass gate transistor | Local electron injection | disturb/write margin | read speed | local electron injection | asymmetric pass gate transistor | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 08/2016, Volume 51, Issue 8, pp. 1938 - 1951
A novel error correction scheme, called reset-checkreverse-flag (RCRF), is proposed to improve the reliability of storage class memories (SCMs). RCRF divides... 
memory controller | storage class memory | Bit error rate | reliability | emerging memory | Decoding | Carbon nanotube | Microprocessors | NRAM | error correcting code | non-volatile memory | solid-state drive | Error correction codes | Error correction | Arrays | DESIGN | RERAM | ENGINEERING, ELECTRICAL & ELECTRONIC | IMPROVEMENT | PROGRAM | Random access memory | Fatigue tests | Carbon nanotubes | Endurance | Flags | Parity
Journal Article
Materials Research Society Symposium Proceedings, ISSN 0272-9172, 2010, Volume 1250, pp. 133 - 144
This paper overview recent research results about ferroelectric FETs such as a Ferroelectric (Fe-) NAND flash memory for enterprise SSDs and a Ferroelectric... 
Electric potential | Electric power generation | Ferroelectricity | Ferroelectric materials | Voltage | Central processing units | Flash memory (computers) | Iron
Conference Proceeding
Jpn J Appl Phys, ISSN 0021-4922, 12/2010, Volume 49, Issue 12, pp. 121501 - 121501-8
A 0.5 V six-transistor static random access memory (6T-SRAM) with ferroelectric-gate field-effect-transistors (Fe-FETs) is proposed and experimentally... 
PHYSICS, APPLIED
Journal Article
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, ISSN 1063-8210, 06/2016, Volume 24, Issue 6, pp. 2208 - 2219
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 01/2012, Volume 47, Issue 1, pp. 85 - 96
Highly reliable and low power solid-state drive (SSD) is proposed. Through the analysis based on measured error rate in the SSDs with NAND flash memories, the... 
NAND flash memory | ECC | low-power coding | SSD | NAND controller | Encoding | Microprocessors | Measurement uncertainty | Computer architecture | Ash | error correcting code | solid-state drive | Error correction codes | Reliability | reliability | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Digest of Technical Papers - IEEE International Solid-State Circuits Conference, ISSN 0193-6530, 2012, Volume 55, pp. 424 - 425
Conference Proceeding
06/2017
A semiconductor storage device includes at least one memory from among a primary memory, a mirror memory storing data corresponding to data stored in the... 
INFORMATION STORAGE | STATIC STORES | COMPUTING | COUNTING | PHYSICS | ELECTRIC DIGITAL DATA PROCESSING | CALCULATING
Patent
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