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CrystEngComm, 4/2018, Volume 2, Issue 14, pp. 253 - 259
Asymmetric island sidewall growth (AISG) is employed to reduce the threading defect density and to modify the surface/interface properties of semipolar GaN... 
Correlation | Indium gallium nitrides | Gallium nitrides | Optical properties | Quantum wells | Surface properties | Variations | Indium | Density | Defects
Journal Article
CrystEngComm, ISSN 1466-8033, 2018, Volume 20, Issue 14, pp. 2053 - 2059
Journal Article
2013, Chu ban., Wen shi zhe xue ji cheng, ISBN 9789863140962, Volume 636
Book
IEEE Electron Device Letters, ISSN 0741-3106, 12/2017, Volume 38, Issue 12, pp. 1696 - 1699
In this letter, we analyzed the gate capacitance characteristics in p-GaN gate/AlGaN/GaN heterostructures by using a two-junction capacitor model. First, we... 
p-GaN/AlGaN/GaN heterostructure | Capacitance-voltage characteristics | Capacitors | C-V characteristics | Logic gates | Wide band gap semiconductors | Aluminum gallium nitride | HEMTS | METAL | GAN | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 07/2012, Volume 33, Issue 7, pp. 988 - 990
We report 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs) with a record current gain cutoff frequency ( fT ) of 370 GHz. The... 
molecular beam epitaxy (MBE) | cutoff frequency | f_{T} | AlN | InAlN | MODFETs | Gallium nitride | Delay | high-electron-mobility transistor (HEMT) | regrown ohmic contacts | GaN | HEMTs | Logic gates | Ohmic contacts | transistor | INALN/GAN HEMTS | f(T) | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Electronics Letters, ISSN 0013-5194, 3/2018, Volume 54, Issue 5, pp. 313 - 315
GaN-based FinFET with double-channel AlGaN/GaN heterostructure is proposed. The current and transconductance characteristics of the device are simulated by... 
Semiconductor technology | MOSFET | gallium compounds | enhancement-mode device | Sentaurus software | FinFET | saturation current | GaN-AlGaN-GaN | ENGINEERING, ELECTRICAL & ELECTRONIC | aluminium compounds | double-channel heterostructure | wide band gap semiconductors | transconductance characteristics | III-V semiconductors
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 10/2015, Volume 36, Issue 10, pp. 1001 - 1003
In this letter, we studied the forward bias gate breakdown mechanism on enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors. To the best... 
AlGaN/GaN HEMTs | Electric breakdown | Logic gates | HEMTs | p-GaN | Wide band gap semiconductors | Forward bias gate breakdown | Gallium nitride | MODFETs | Aluminum gallium nitride | avalanche breakdown | forward bias gate breakdown | VOLTAGE | IMPACT | TEMPERATURE-DEPENDENCE | HEMTS | METAL | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Semiconductors, ISSN 1674-4926, 11/2016, Volume 37, Issue 11, p. 111001
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 04/2019, Volume 780, pp. 476 - 481
Journal Article
Medical Physics, ISSN 0094-2405, 05/2019, Volume 46, Issue 5, pp. 2157 - 2168
Purpose Accurate and timely organs-at-risk (OARs) segmentation is key to efficient and high-quality radiation therapy planning. The purpose of this work is to... 
chest segmentation | deep learning | PROSTATE | VARIABILITY | DEFINITION | CT | LUNG-CANCER | HEAD | ORGANS | STATISTICS | VOLUME DELINEATION | RADIOLOGY, NUCLEAR MEDICINE & MEDICAL IMAGING
Journal Article
1989, Di 1 ban., 2, 30, 606
Book
physica status solidi (b), ISSN 0370-1972, 09/2016, Volume 253, Issue 9, pp. 1715 - 1720
We report the structural and electronic characterization of GaN on magnesium aluminate (MgAl2O4) (111) substrates using first-principles calculations. Atomic... 
termination | MgAl | GaN | surface energy | density functional theory | growth | polarity | BUFFER LAYER | PHYSICS, CONDENSED MATTER | SPINEL | FILMS | MgAl2O4 | DIODES | Nitrogen | Liquors | Chemical properties
Journal Article
Scientific Reports, ISSN 2045-2322, 04/2014, Volume 4, Issue 1, p. 4179
GaN crystals without cracks were successfully grown on a MOCVD-GaN/6H-SiC (MGS) substrate with a low V/III ratio of 20 at initial growth. With a high V/III... 
6H-SIC | VAPOR-PHASE EPITAXY | V/III-RATIO | TEMPERATURE | ALN BUFFER | MULTIDISCIPLINARY SCIENCES | MOLECULAR-BEAM EPITAXY | TEMPLATE | DIODES | STRAIN | LAYERS | Films | Crystals
Journal Article
Journal of Materials Chemistry C, ISSN 2050-7526, 1/2018, Volume 6, Issue 2, pp. 299 - 33
High-performances deep-ultraviolet (DUV) photodetectors (PDs) are highly desired due to their great importance in numerous fields. In this study, self-powered... 
NEAR-INFRARED PHOTODETECTORS | LIGHT-EMITTING-DIODES | HOMOTYPE HETEROJUNCTION | PHYSICS, APPLIED | PHOTORESPONSE | VISIBLE-BLIND | GAN | MATERIALS SCIENCE, MULTIDISCIPLINARY | HIGH-DETECTIVITY | FABRICATION | NANOFLAKES | HIGH-SPEED | Molybdenum disulfide | Sensitivity analysis | Power supplies | Light | Photometers | Heterojunctions | Frequency stability | P-n junctions
Journal Article
Journal of Materials Chemistry C, ISSN 2050-7526, 2018, Volume 6, Issue 2, pp. 299 - 303
Journal Article
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