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Nanoscale, ISSN 2040-3364, 05/2019, Volume 11, Issue 18, pp. 8699 - 8705
Structural analogue between pure carbonic nanostructures and their boron nitride counterparts provides possibilities for the fabrication of BCN... 
Journal Article
ISSN 2040-3364, 5/2019, Volume 11, Issue 18, pp. 8699 - 875
Structural analogue between pure carbonic nanostructures and their boron nitride counterparts provides possibilities for the fabrication of BCN... 
Journal Article
IEEE Transactions on Vehicular Technology, ISSN 0018-9545, 12/2018, Volume 67, Issue 12, pp. 12394 - 12397
Journal Article
Nanoscale, ISSN 2040-3364, 01/2019, Volume 11, Issue 18, pp. 8699 - 8705
Structural analogue between pure carbonic nanostructures and their boron nitride counterparts provides possibilities for the fabrication of BCN... 
Domains | Stoichiometry | First principles | Morphology | Boron nitride | Conductivity | Nanomaterials | Transport | Potential barriers
Journal Article
Acta Materialia, ISSN 1359-6454, 01/2018, Volume 143, pp. 102 - 106
Phase-change memory (PCM) material is the promising material system for nonvolatile-memory technology. Performance optimization of PCM device urgently requires... 
First-principles calculations | Atom chain | Amorphous alloy | Phase-change memory | Structure-property relation | Optical properties | Alloys
Journal Article
Acta Materialia, ISSN 1359-6454, 01/2018, Volume 143, Issue C
Journal Article
Journal of Inorganic Biochemistry, ISSN 0162-0134, 07/2018, Volume 184, p. 8
To access, purchase, authenticate, or subscribe to the full-text of this article, please visit this link: http://dx.doi.org/10.1016/j.jinorgbio.2018.04.008... 
Crystals | Density functionals | Beta lactamases | Phylogeny | Structure
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2016, Volume 109, Issue 20, p. 203113
As the first-principles calculations using the supercell approximation give widely scattered results in a two-dimensional charged system, making the evaluation... 
TRANSISTORS | PHYSICS, APPLIED | FILMS | SILICON | GRAPHITE OXIDE | DIFFUSION | CARBON NANOTUBES | BAND-GAP | Pictures | Boron | First principles | Electronic properties | Nitrogen defects | Graphene | Ionization | Conductivity | Chains | Excitation | Nitrogen | Carbon
Journal Article
ISSN 1359-7345, 6/2016, Volume 52, Issue 53, pp. 8317 - 832
Hierarchical networks, constructed by non-covalent bond stabilized cross-junctions of covalent one-dimensional molecular wires, are synergistically formed at... 
Journal Article
Chemical Physics Letters, ISSN 0009-2614, 04/2015, Volume 625, pp. 64 - 68
Electronic spectra, and the nonlinear optical (NLO) properties of five isomers of C were investigated using density functional theory and semi-empirical... 
Journal Article
Chemical Physics Letters, ISSN 0009-2614, 04/2015, Volume 625, p. 64
Journal Article
International Journal of Quantum Chemistry, ISSN 0020-7608, 11/2015, Volume 115, Issue 21, pp. 1553 - 1560
Possible isomers of buckybowl with various N contents (5–15%) were systematically searched with density functional theory (DFT) calculations. N doped... 
the second hyperpolarizability | heterobuckybowl | DFT | QUANTUM SCIENCE & TECHNOLOGY | BORON | C48N12 | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | CHEMISTRY, PHYSICAL | CARBON NANOTUBES | FAMILY | AROMATICITY | MATHEMATICS, INTERDISCIPLINARY APPLICATIONS | ISOMERS | MAGNETIC-PROPERTIES | C-60 | Density functionals | Nitrogen | Specific gravity | Analysis
Journal Article
IEEE Transactions on Nanotechnology, ISSN 1536-125X, 05/2018, Volume 17, Issue 3, pp. 614 - 614
Journal Article
IEEE Transactions on Nanotechnology, ISSN 1536-125X, 05/2018, Volume 17, Issue 3, pp. 614 - 614
Presents corrections to the paper, “Metal–insulator transition ofGe–Sb–Te superlattice: An electron counting model study,” (Chen, N.-K.), IEEE Trans.... 
Metal-insulator transition | Superlattices | Wide band gap semiconductors | Phase change memories
Journal Article
Journal of Chemical Physics, ISSN 0021-9606, 08/2012, Volume 137, Issue 8
Journal Article
Physical Chemistry Chemical Physics, ISSN 1463-9076, 02/2015, Volume 17, Issue 5, pp. 3653 - 3658
This work is focused on achieving high performance multilayer InSe field-effect transistors by a systematic experiment study on metal contacts. The high... 
RAMAN-SCATTERING | PHOTODETECTORS | INTEGRATED-CIRCUITS | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | CRYSTALS | GAS | CHEMISTRY, PHYSICAL | SINGLE-LAYER MOS2 | GRAPHENE TRANSISTORS | NANOSHEETS | FIELD-EFFECT TRANSISTORS | Multilayers | Semiconductor devices | Aluminum | Titanium | Chromium | Nanostructure | Devices
Journal Article
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