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Journal Article
JAMA Neurology, ISSN 2168-6149, 02/2017, Volume 74, Issue 2, p. 163
  Importance Parkinson disease (PD) is a highly prevalent and incurable neurodegenerative disease associated with the accumulation of misfolded a-synuclein... 
Proteins | Correlation analysis | Parkinsons disease | Medical diagnosis | Alzheimers disease
Journal Article
JAMA Neurology, ISSN 2168-6149, 02/2017, Volume 74, Issue 2, pp. 163 - 163
Importance Parkinson disease (PD) is a highly prevalent and incurable neurodegenerative disease associated with the accumulation of misfolded a-synuclein... 
Journal Article
Neurologia medico-chirurgica, ISSN 0470-8105, 2012, Volume 52, Issue 11, pp. 775 - 809
Journal Article
JAPANESE JOURNAL OF APPLIED PHYSICS, ISSN 0021-4922, 10/2019, Volume 58, Issue 10, p. 106503
Influence of etching depth on the interface properties in Al2O3/n-GaN MOS diodes has been investigated. The n-GaN surface was etched by inductively coupled... 
HIGH-THRESHOLD-VOLTAGE | PHYSICS, APPLIED | ALGAN/GAN HEMTS | CONDUCTIVITY | MODE | N-TYPE GAN | METAL | DAMAGE | Depth indicators | Electric potential | Gallium nitrides | Etching | Interfacial properties | Density | Ammonium hydroxide | Aluminum oxide | Resistance | Reactive ion etching | Voltage | Organic light emitting diodes | Leakage current
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 10/2017, Volume 56, Issue 10, p. 104101
We present an analytical expression of sub-threshold swing (SS) in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs), and... 
Semiconductor devices | Mathematical analysis | Gallium nitrides | Aluminum gallium nitrides | High electron mobility transistors | Transistors
Journal Article
Journal of Clinical Investigation, ISSN 0021-9738, 12/2012, Volume 122, Issue 12, pp. 4505 - 4518
Journal Article
SCIENTIFIC REPORTS, ISSN 2045-2322, 04/2019, Volume 9, Issue 1, pp. 6275 - 7
Study of arsenic (As) provides guidelines for the development of next-generation materials. We clarify the unique structure of the third crystalline polymorph... 
PRESSURE | TOTAL-ENERGY | SUPERCONDUCTIVITY | MULTIDISCIPLINARY SCIENCES | BLACK PHOSPHORUS | CRYSTAL | ANTIMONY | Arsenic | Computer applications | Crystal structure
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 07/2018, Volume 57, Issue 7, p. 71001
Electron concentration in highly resistive GaN substrates with intentional iron (Fe) dopants as well as unintentionally incorporated silicon (Si) and carbon... 
EPITAXY | TRANSISTORS | PHYSICS, APPLIED | CARBON | CHEMICAL-VAPOR-DEPOSITION | ALGAN/GAN HEMTS | GROWTH | BUFFER | Temperature dependence | Secondary ion mass spectroscopy | Gallium nitrides | Silicon substrates | Dopants | Iron | Activation energy | Electrons
Journal Article
Journal Article
BMC Cancer, ISSN 1471-2407, 10/2013, Volume 13, Issue 1, pp. 468 - 468
Journal Article
PLoS ONE, ISSN 1932-6203, 03/2012, Volume 7, Issue 3, p. e33389
Journal Article