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Nature, ISSN 0028-0836, 10/2015, Volume 526, Issue 7571, pp. 51 - 52
Because it is not easy to make gate stacks from 2D MoS2 materials, the authors use a solid polymer electrolyte as the device's gate electrode. 
Properties | Field-effect transistors | Integrated circuits | Semiconductors | Transistors
Journal Article
Nature, ISSN 0028-0836, 09/2015, Volume 526, Issue 7571, pp. 51 - 52
Journal Article
Nature, ISSN 0028-0836, 08/2012, Volume 488, Issue 7410, pp. 189 - 192
Silicon transistors are expected to have new gate architectures, channel materials and switching mechanisms in ten years' time(1-4). The trend in transistor... 
MULTIDISCIPLINARY SCIENCES | FIELD-EFFECT TRANSISTORS | GROWTH | Silicon | Dielectrics | Research | Transistors | Misfit dislocations | Nanowires | Field programmable gate arrays | Crystal structure | Indium gallium arsenides | Nanocomposites | Semiconductor devices | Nanomaterials | Nanostructure | Channels | Gates
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 10/2018, Volume 500, p. 58
III-V compound semiconductors are promising channel materials for the future low-power and high-performance transistor because of their high electron/hole... 
Semiconductors | Semiconductor devices | Vapor phases | Doping | Hole mobility | Metalorganic vapor phase epitaxy | Indium arsenides | Vapor phase epitaxy | Leakage current | Nanowires | Transistors | Nanostructured materials | Electrostatics | Transconductance | Group III-V semiconductors
Journal Article
ECS Transactions, ISSN 1938-6737, 2017, Volume 80, Issue 1, pp. 43 - 52
Conference Proceeding
Applied Physics Letters, ISSN 0003-6951, 02/2011, Volume 98, Issue 8, pp. 083114 - 083114-3
We report on fabrication of tunnel field-effect transistor with III-V nanowire (NW)/Si heterojunction and surrounding-gate structure. The device fabricated by... 
IMPACT | PHYSICS, APPLIED | FETS | SILICON
Journal Article
Nano Letters, ISSN 1530-6984, 10/2008, Volume 8, Issue 10, pp. 3475 - 3480
We report on control of growth directions of InAs nanowires on Si substrate. We achieved to integrate vertical InAs nanowires on Si by modifying initial... 
SELECTIVE-AREA MOVPE | ARSENIDE NANOWIRES | EPITAXIAL-GROWTH | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | NANOSCIENCE & NANOTECHNOLOGY | III-V NANOWIRES | GAAS | CHEMISTRY, MULTIDISCIPLINARY
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 10/2014, Volume 47, Issue 39, pp. 394001 - 13
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2014, Volume 104, Issue 7, p. 73507
We report on a fabrication of tunnel field-effect transistors using InGaAs nanowire/Si heterojunctions and the characterization of scaling of channel lengths.... 
PHYSICS, APPLIED | SILICON | Indium gallium arsenides | Semiconductor devices | Field effect transistors | Silicon substrates | Heterojunctions | Scaling | Nanowires | Transistors
Journal Article
ECS Transactions, ISSN 1938-6737, 07/2019, Volume 92, Issue 4, pp. 71 - 78
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 10/2018, Volume 500, pp. 58 - 62
Journal Article
AIP Advances, ISSN 2158-3226, 12/2017, Volume 7, Issue 12, pp. 125304 - 125304-5
Composition controllability of vertical InGaAs nanowires (NWs) on Si integrated by selective area growth was characterized for Si photonics in the optical... 
PHYSICS, APPLIED | LASER | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | GAAS NANOWIRES | CATALYST-FREE GROWTH | NANOSCIENCE & NANOTECHNOLOGY | MOVPE | Composition | Gallium base alloys | Stability | Morphology | Controllability | Nanowires | Photonics | Solid phases
Journal Article
Nano Letters, ISSN 1530-6984, 03/2017, Volume 17, Issue 3, pp. 1350 - 1355
We demonstrated the formation of all-wurtzite (WZ) InP/AlInP core–multishell (CMS) nanowires (NWs) by selective-area growth with the crystal structure transfer... 
selective-area growth | wurtzite | MOVPE | III−V | nanowire | Stacking faults | Transmission electron microscopy | Wurtzite | Nanostructure | Nanowires | Arrays | X ray diffraction | Crystal structure
Journal Article
Nanotechnology, ISSN 0957-4484, 03/2019, Volume 30, Issue 13, p. 134002
We report a systematic study on the current injection and radiative carrier recombination in InP nanowire (NW) light-emitting diodes (LEDs). The InP NWs with... 
selective-area growth | InP | light-emitting diode | radiative tunneling | metal-organic vapor-phase epitaxy | nanowire | RECOMBINATION | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | PHOTONS | GRAPHENE | NANOSCIENCE & NANOTECHNOLOGY | GAAS | QUANTUM DOTS | INP NANOWIRES | LUMINESCENCE | INJECTION | EMISSION | EFFICIENCY
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 04/2017, Volume 464, p. 75
We report the growth of InGaAs nanowires (NWs) on Ge(111) substrates using selective-area metal-organic vapor-phase epitaxy (SA-MOVPE) for novel InGaAs/Ge... 
Heat treatment | Semiconductors | Energy dispersive | Gallium arsenide | Lattice parameters | Substrates | Dislocations | Metal oxides | CMOS | Spectrometry | Vapor phase epitaxy | Partial pressure | Transmission electron microscopy | Germanium | Nanowires | Epitaxial growth
Journal Article
Nano Letters, ISSN 1530-6984, 11/2015, Volume 15, Issue 11, pp. 7253 - 7257
Journal Article
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