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Journal of applied crystallography, ISSN 1600-5767, 2015, Volume 48, Issue 3, pp. 679 - 689
Modeling of the X-ray diffractometer instrumental function for a given optics configuration is important both for planning experiments and for the analysis of... 
diffractometer instrumental function | high‐resolution X‐ray diffraction | ab initio simulation | high-resolution X-ray diffraction | CRYSTALLOGRAPHY | CHEMISTRY, MULTIDISCIPLINARY | Algorithms | Diffraction | Analysis | Detectors | X-rays | X rays | Simulation | Crystallography
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 09/2017, Volume 122, Issue 10, p. 105302
... Kaganer, 1 T atjana Ulyanenkova, 2 Andrei Benediktovitch, 3 Maksym Myronov, 4 and Alex Ulyanenkov 5 1 Paul-Drude-Institut f€ ur Festk€ orperelektronik... 
SURFACE-MORPHOLOGY | PHYSICS, APPLIED | DENSITIES | PATTERN | CROSS-HATCH | SILICON | LATTICE MISMATCH | STRAIN | GAAS | LAYERS | Silicon compounds | Monte Carlo method | Usage | Diffraction | X-rays | Electric properties
Journal Article
physica status solidi (c), ISSN 1862-6351, 03/2015, Volume 12, Issue 3, pp. 255 - 258
Highly boron doped epitaxial silicon, with boron concentrations well above 1x1020 cm‐3, is of great interest for applications in large variety of electronic... 
boron doped silicon | high resolution X‐ray diffraction | reciprocal space mapping | Reciprocal space mapping | Boron doped silicon | High resolution X-ray diffraction | High resolution | Boron | Solid solutions | Epitaxy | X-rays | Silicon substrates | Electronics | Silicon | Devices
Journal Article
Journal Article
Advanced materials research, ISSN 1022-6680, 08/2014, Volume 996, pp. 162 - 168
X-ray residual stress analysis is a widespread nondestructive technique to investigate the residual stress and residual stress gradient in thin films and... 
DWBA | Refraction and absorption | Residual stress depth profiles | Noncomplanar diffraction geometry
Journal Article
Journal of Applied Crystallography, ISSN 1600-5767, 06/2017, Volume 50, Issue 3, pp. 776 - 786
Journal Article
Materials science forum, ISSN 0255-5476, 09/2013, Volume 768-769, pp. 249 - 256
The Bragg peak position of a homogeneous solid solution epitaxial film is directly related to the solid solution concentration, film strain and, consequently,... 
Stress and composition depth profiles | Reciprocal space mapping | Misfit dislocations | High resolution X-ray diffraction | Stress and composition value | Thin films | High resolution | Reciprocal space | Maps | Solid solutions | Epitaxy | Case depth | Residual stress
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2004, Volume 5536, pp. 1 - 15
Conference Proceeding
Materials science forum, ISSN 0255-5476, 03/2011, Volume 681, pp. 387 - 392
In the presence of texture, the concept of X-ray elastic constants as well as Sin2ψ law is inapplicable and the X-ray stress factors (XSF) connecting average... 
X-ray stress factors | Texture spherical and fiber components | SO vector parameterzation
Journal Article
Materials science forum, ISSN 0255-5476, 03/2011, Volume 681, pp. 121 - 126
Roughness influence on the residual stress gradient evaluation in the case of a grazing incidence X-ray diffraction setup is considered. In this geometry the... 
GIXRD | Residual stress gradient | Roughness
Journal Article
Journal of applied physics, ISSN 0021-8979, 09/2017, Volume 122, Issue 10
The experimental x-ray diffraction patterns of a Si0.4Ge0.6/Si(001) epitaxial film with a low density of misfit dislocations are modeled by the Monte Carlo... 
Diffraction patterns | Dislocation density | Monte Carlo method | Misfit dislocations | Diffraction | Computer simulation | X-ray diffraction
Journal Article
Journal of Applied Crystallography, ISSN 1600-5767, 08/2014, Volume 47, Issue 4, pp. 1298 - 1303
A noncoplanar measurement geometry, achieved by using a diffractometer equipped with a detector arm possessing two degrees of freedom, is a promising technique... 
residual stress | noncoplanar geometry | X‐ray diffraction | anisotropic microstructure | X-ray diffraction | DEPTH | CHEMISTRY, MULTIDISCIPLINARY | CRYSTALLOGRAPHY | Measurement | Diffraction | Anisotropy | Analysis | Detectors | X-rays | Crystallography | Beams (radiation) | Degrees of freedom | Receiving | Mathematical analysis | Exact solutions | Slits | Residual stress
Journal Article
Journal of Applied Crystallography, ISSN 1600-5767, 12/2014, Volume 47, Issue 6, pp. 1931 - 1938
Journal Article
Physica status solidi. A, Applications and materials science, ISSN 1862-6300, 03/2018, Volume 215, Issue 5, p. 1700670
Journal Article
Journal of applied crystallography, ISSN 1600-5767, 06/2015, Volume 48, Issue 3, pp. 679 - 689
Modeling of the X-ray diffractometer instrumental function for a given optics configuration is important both for planning experiments and for the analysis of... 
Journal Article
Physica status solidi. C, ISSN 1862-6351, 03/2015, Volume 12, Issue 3, p. 255
Highly boron doped epitaxial silicon, with boron concentrations well above 1x10.sub.20 cm.sub.-3, is of great interest for applications in large variety of... 
Epitaxy | Analysis
Journal Article
Proceedings of SPIE, ISSN 0277-786X, 08/2004, Volume SPIE-5536, pp. 1 - 15
LEPTOS is a software package for analytical interpretation of data obtained in glancing-incidence X-ray reflectivity and high-resolution X-ray diffraction... 
Journal Article
06/2017
J. Appl. Phys. 122, 105302 (2017) The experimental x-ray diffraction patterns of a Si$_{0.4}$Ge$_{0.6}$/Si(001) epitaxial film with a low density of misfit... 
Physics - Materials Science
Journal Article
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