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Solid State Electronics, ISSN 0038-1101, 09/2019, Volume 159, p. 63
The formation of a multi-crystalline HfO.sub.2 film, containing the ferroelectric phase OII (Pmn2.sub.1) after a high-temperature annealing at 1100 [degrees]C,... 
Circuit components | Metal oxide semiconductor field effect transistors | Annealing | Analysis | Silicon
Journal Article
Nature Nanotechnology, ISSN 1748-3387, 01/2014, Volume 9, Issue 10, pp. 808 - 813
Recent developments in the technology of van der Waals heterostructures(1,2) made from two-dimensional atomic crystals(3,4) have already led to the observation... 
TRANSISTOR | TRANSITION | FILMS | DIRAC FERMIONS | SPECTROSCOPY | SUPERLATTICES | DOUBLE-LAYER GRAPHENE | MATERIALS SCIENCE, MULTIDISCIPLINARY | BARRIER | NANOSCIENCE & NANOTECHNOLOGY | HEXAGONAL BORON-NITRIDE | ELECTRONICS | Tunnelling | Semiconductor devices | Graphene | Boron nitride | Transistors | Orientation | Devices | Heterostructures | Physics - Mesoscale and Nanoscale Physics
Journal Article
Thin Solid Films, ISSN 0040-6090, 03/2015, Volume 579, p. 131
The properties of thin Si and SiGe layers grown on SiO.sub.2 by chemical vapor deposition (CVD) were studied using transmission electron and atomic force... 
Optical properties | Analysis | Photoluminescence | Chemical vapor deposition
Journal Article
Journal of Geophysical Research: Oceans, ISSN 0148-0227, 2012, Volume 117, Issue 6
The laboratory experiments on investigation of aerodynamic resistance of the waved water surface under severe wind conditions (up to U-10 approximate to 40 m... 
FLOW SEPARATION | WAVE GENERATION | HURRICANE WINDS | OCEANOGRAPHY | SURFACE-WAVES | DYNAMICS | ATMOSPHERIC BOUNDARY-LAYER | DRAG COEFFICIENT | SPRAY | TROPICAL CYCLONES | STRESS | Physical oceanography | Oceanography
Journal Article
Thin Solid Films, ISSN 0040-6090, 03/2015, Volume 579, pp. 131 - 135
Journal Article
Nature Physics, ISSN 1745-2473, 12/2015, Volume 11, Issue 12, pp. 1057 - 1062
A class of multilayered functional materials has recently emerged in which the component atomic layers are held together by weak van der Waals forces that... 
PHYSICS, MULTIDISCIPLINARY | Atomic physics | Electronics | Crystal lattices | Physical properties | Physics - Mesoscale and Nanoscale Physics
Journal Article
Physical Chemistry Chemical Physics, ISSN 1463-9076, 5/2015, Volume 17, Issue 2, pp. 13257 - 13266
In the present study, we have examined the interaction between a suspension of graphene in dimethylformamide and an aqueous solution of hydrofluoric acid,... 
OXIDE | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | CHEMISTRY, PHYSICAL | HIGH-PERMITTIVITY | MONOLAYER | FEW-LAYER GRAPHENE | CARBON NANOTUBES | FLUOROGRAPHENE | Field strength | Electric potential | Graphene | Roughness | Nanostructure | Flakes | Devices | Fluorination | Density
Journal Article
Solid State Electronics, ISSN 0038-1101, 09/2019, Volume 159, pp. 63 - 70
The formation of a multi-crystalline HfO film, containing the ferroelectric phase OII ( ) after a high-temperature annealing at 1100 °C, was experimentally... 
Silicon-on-sapphire pseudo-MOSFETs | Hafnium oxide interlayer | Ferroelectric phase | Polarization mechanism | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | QUALITY | FILMS | ION-IMPLANTATION | SILICON | MICROSTRUCTURE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Nanotechnology, ISSN 0957-4484, 04/2016, Volume 27, Issue 20, pp. 205601 - 205601
Journal Article
Journal of Materials Science, ISSN 0022-2461, 09/2017, Volume 52, Issue 18, pp. 10993 - 11003
Journal Article
Semiconductors, ISSN 1063-7826, 10/2018, Volume 52, Issue 10, pp. 1341 - 1348
The continuous transfer of (001)Si layers 0.2–1.7 μm thick by implanted hydrogen to the c-sapphire surface during direct bonding at high temperatures of... 
Physics | Magnetism, Magnetic Materials | Physics, general | EPITAXY | PHYSICS, CONDENSED MATTER | QUALITY | FILMS | SUBSTRATE | ION-IMPLANTATION | GROWTH | ON-SAPPHIRE | Hydrogen | Silicon | Interlayers | Sapphire | Silicon oxides | Bonding | Heterostructures | Silicon dioxide | Aluminum oxide | OXIDATION | HOLE MOBILITY | TEMPERATURE RANGE 0400-1000 K | HEAT TREATMENTS | MATERIALS SCIENCE | SILICA | ALUMINIUM OXIDES | THICKNESS | SILICON OXIDES
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2003, Volume 83, Issue 8, pp. 1575 - 1577
Au and Ag Schottky contacts on the epiready (0001)Zn surface of bulk n-ZnO crystals show Schottky barrier heights of 0.65-0.70 eV from capacitance-voltage... 
PERSISTENT PHOTOCONDUCTIVITY | ROOM-TEMPERATURE | SAPPHIRE | PHYSICS, APPLIED | FILMS | DEEP LEVELS | SURFACE BARRIERS | ZINC-OXIDE | DEVICES | DIODE
Journal Article
Patologicheskaia fiziologiia i èksperimental'naia terapiia, ISSN 0031-2991, 2014, Issue 1, pp. 24 - 27
Journal Article
Chaos: An Interdisciplinary Journal of Nonlinear Science, ISSN 1054-1500, 12/2007, Volume 17, Issue 4, pp. 043109 - 043109-13
We propose a discrete time dynamical system (a map) as a phenomenological model of excitable and spiking-bursting neurons. The model is a discontinuous... 
NEURONS | MATHEMATICS, APPLIED | 2-DIMENSIONAL MAP | REGULARIZATION | PHYSICS, MATHEMATICAL | Models, Theoretical | Neurons - pathology | Algorithms | Computer Simulation | Humans | Nerve Net | Models, Neurological | Models, Statistical | Oscillometry - methods | Biophysics - methods | Nonlinear Dynamics | Index Medicus
Journal Article
Superlattices and Microstructures, ISSN 0749-6036, 2009, Volume 45, Issue 4, pp. 177 - 181
Medium-energy ion scattering and transmission electron microscopy have been used to study the structural perfection of a Si single crystal implanted with 100... 
Ion implantation | Silicon | Transmission electron microscopy | Rutherford backscattering spectrometry | Defects | PHYSICS, CONDENSED MATTER
Journal Article
Refractories and Industrial Ceramics, ISSN 1083-4877, 11/2017, Volume 58, Issue 4, pp. 349 - 353
Equipment installed in the pouring chambers of the tundish of continuous section casters is considered. Improvements made to the equipment assure efficient... 
tundish | Materials Science | continuous casting machine | Materials Science, general | metal stream | Characterization and Evaluation of Materials | mathematical simulation | Ceramics, Glass, Composites, Natural Materials | STEEL | CBCM | CHAMBER | STREAM | MATERIALS SCIENCE, CERAMICS | Degassing of metals | Metals | Casters
Journal Article
Technical Physics Letters, ISSN 1063-7850, 9/2018, Volume 44, Issue 9, pp. 817 - 819
Structural defects formed in epitaxial GaAs layers as a result of 250-keV N+ ion implantation to doses within 5 × 1014–5 × 1016 cm–2 have been studied by the... 
Classical and Continuum Physics | Physics | PHYSICS, APPLIED | NANOSTRUCTURES | Nitrogen | Gallium arsenide | Epitaxy | Ion implantation | Transmission electron microscopy | Nitrogen ions | Deformation | Amorphization | X-ray diffraction | Defects
Journal Article
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