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indexing scheme relating to hinges or other suspension devicesfor doors, windows or wings and devices for moving wings intoopen or closed position, checks for wings and wing fittings nototherwise provided for, concerned with the functioning of thewing (3) 3
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Scientific Reports, ISSN 2045-2322, 12/2018, Volume 8, Issue 1, pp. 1 - 11
We report the chemical phenomena involved in the reverse forming (negative bias on top electrode) and reset of a TaN/TiTe/Al2O3/Ta memory stack. Hard X-ray... 
COPPER | OXIDE | X-RAY PHOTOEMISSION | MULTIDISCIPLINARY SCIENCES | BIPOLAR | Electrodes | Interfaces | Oxygen | Bias | Migration | Electrolytes | Drift | Photoelectron spectroscopy | Aluminum oxide | Chemical Sciences
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 01/2020, Volume 35, Issue 1, p. 15015
Journal Article
Applied Surface Science, ISSN 0169-4332, 02/2018, Volume 432, pp. 34 - 40
We investigated origins of the resistivity change during the forming of ZrTe/Al O based conductive-bridge resistive random access memories. Non-destructive... 
CBRAM | RRAM | HAXPES | Oxygen scavenging | Interface chemistry | THERMAL-STABILITY | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | X-RAY PHOTOEMISSION | CHEMISTRY, PHYSICAL | MATERIALS SCIENCE, COATINGS & FILMS | Aluminum compounds | Zirconium | X-ray spectroscopy | Analysis | Electric properties | Physics
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 2017, Volume 32, Issue 10, p. 104003
We have compared co-flow and cyclic deposition/etch processes for the selective epitaxial growth of SiP layers. High growth rates, relatively low resistivities... 
Engineering Sciences
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2019, Volume 515, pp. 48 - 52
In this work we have studied the growth of AlN barriers on GaN channels by Metal-Organic Vapor Phase Epitaxy (MOVPE). We have shown that an SiN in-situ capping... 
SiN | AlN | MOVPE | GaN | Rsheet | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | CRYSTALLOGRAPHY | Aluminum compounds | Ammonia | Epitaxy | Thin films | Capping | Vapor phase epitaxy | Partial pressure | Barrier layers | Gallium nitrides | Vapor phases | Heterostructures | Aluminum nitride | Free surfaces | Engineering Sciences
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 08/2017, Volume 32, Issue 10, p. 104003
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 04/2016, Volume 119, Issue 15
The electrochemical capacitance voltage technique has been used on highly boron doped SiGe and Si layers. Although the boron concentration is constant over the... 
Electrical measurement | Electric potential | Boron | Secondary ion mass spectroscopy | Doping | Silicon base alloys | Space charge | Capacitance | Germanium base alloys | Mass spectrometry | Curvature
Journal Article
SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, ISSN 0584-8547, 10/2019, Volume 160
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2011, Volume 99, Issue 20, pp. 202107 - 202107-3
Journal Article
ACS APPLIED MATERIALS & INTERFACES, ISSN 1944-8244, 06/2017, Volume 9, Issue 23, pp. 20179 - 20187
Functionalization of Ge surfaces with the aim of incorporating specific dopant atoms to form high-quality junctions is of particular importance for the... 
PHOSPHORUS | antimony | OXIDE | PASSIVATION | SEMICONDUCTORS | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | NANOSCIENCE & NANOTECHNOLOGY | PHOTODETECTOR | germanitn | MOLECULAR MONOLAYERS | REDUCTION | monolcoier doping | shalloiv junction | CITRIC-ACID | dopant activation | PRECURSORS
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 10/2015, Volume 30, Issue 11
We have investigated the feasibility of selectively growing SiGe:B layers at 450 degrees C, 20 Ton in a 300 mm industrial reduced pressure chemical vapor... 
disilane and germane | reduced pressure-chemical vapour deposition | SiGe:B raised sources and drains | PHYSICS, CONDENSED MATTER | DESORPTION | RAISED SOURCES | KINETICS | MATERIALS SCIENCE, MULTIDISCIPLINARY | reduced pressure chemical vapour deposition | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
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