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Progress in Photovoltaics: Research and Applications, ISSN 1062-7995, 08/2016, Volume 24, Issue 8, pp. 1142 - 1148
The electronic band alignment of the Zn(O,S)/Cu(In,Ga)Se 2 interface in high‐efficiency thin‐film solar cells was derived using X‐ray photoelectron... 
chalcopyrite thin‐film solar cell | X‐ray spectroscopy | Zn(O,S) | inverse photoemission | band alignment | alternative buffer layers | X-ray spectroscopy | chalcopyrite thin-film solar cell | MATERIALS SCIENCE | SOLAR ENERGY | x-ray spectroscopy
Journal Article
PROGRESS IN PHOTOVOLTAICS, ISSN 1062-7995, 08/2016, Volume 24, Issue 8, pp. 1142 - 1148
The electronic band alignment of the Zn(O,S)/Cu(In,Ga)Se-2 interface in high-efficiency thin-film solar cells was derived using X-ray photoelectron... 
HETEROJUNCTION | PHYSICS, APPLIED | ENERGY & FUELS | MATERIALS SCIENCE, MULTIDISCIPLINARY | ZINC-OXIDE | inverse photoemission | X-ray spectroscopy | chalcopyrite thin-film solar cell | Zn(O | JUNCTION FORMATION | IMPACT | S | alternative buffer layers | GAP | CHEMICAL BATH DEPOSITION | band alignment
Journal Article
ACS APPLIED MATERIALS & INTERFACES, ISSN 1944-8244, 12/2016, Volume 8, Issue 48, pp. 33256 - 33263
Journal Article
Progress in Photovoltaics, ISSN 1062-7995, 08/2016, Volume 24, Issue 8, pp. 1142 - 1148
The electronic band alignment of the Zn(O,S)/Cu(In,Ga)Se sub(2) interface in high-efficiency thin-film solar cells was derived using X-ray photoelectron... 
Solar cells | Thin films | Alignment | Photovoltaic cells | Electronics | Devices | Conduction band | Photoelectron spectroscopy
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2009, Volume 95, Issue 12, pp. 122104 - 122104-3
The formation of the interface between a magnetron sputtered ( Zn 1 − x , Mg x ) O buffer layer and a CuIn ( S , Se ) 2 absorber in thin film solar cells has... 
Journal Article
Journal Article
Chemical Physics Letters, ISSN 0009-2614, 12/2006, Volume 433, Issue 1-3, pp. 71 - 74
Recently, Cd-free wide-gap CuInS -based 'CIS' thin film solar cells with a [Zn(S,O)/ZnS] bi-layer instead of a CdS buffer were developed, which (after... 
BAND ALIGNMENT | CHEMISTRY, PHYSICAL | FILM SOLAR-CELLS | CUINS THIN-FILMS | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | LAYERS
Journal Article
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 05/2013, Volume 113, Issue 19
Spatial variations in the chemical composition of the (Zn,Mg)O/CuIn(S,Se)(2) thin-film solar cell interface were studied by photoemission electron microscopy... 
PHYSICS, APPLIED | MODULES | CDS | PERFORMANCE | MGXZN1-XO | MOLECULAR-BEAM EPITAXY | XPEEM | CU(IN,GA)SE-2 | CHALCOPYRITE
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 05/2013, Volume 113, Issue 19, p. 193709
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 09/2005, Volume 98, Issue 5, pp. 053702 - 053702-8
Zn(O,OH) layers deposited by the ion layer gas reaction (ILGAR) technique have the potential to replace the conventionally used CdS buffer layer in Cu ( In ( 1... 
CBD-CDS BUFFER | PHYSICS, APPLIED | SPECTROSCOPY | ALIGNMENT | DEPOSITION | OXIDES | SPECTRA | Solar cells | Zinc compounds | Usage | Chalcopyrite | Solar batteries | Design and construction | Photoelectron spectroscopy | Electric properties
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 09/2009, Volume 95, Issue 12
The formation of the interface between a magnetron sputtered (Zn1-x, Mg-x)O buffer layer and a CuIn(S, Se)(2) absorber in thin film solar cells has been... 
PHYSICS, APPLIED | PERFORMANCE
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 07/2006, Volume 100, Issue 2, pp. 024907 - 024907-4
KCN etching of the Cu x S surface layer formed during the production process of Cu ( In , Ga ) S 2 thin film solar cell absorbers as well as subsequent H 2 O 2... 
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2009, Volume 94, Issue 1, pp. 012110 - 012110-3
The chemical and electronic surface structure of Zn O : Zn 3 N 2 (ZnO:N) thin films with different N contents was investigated by soft x-ray emission... 
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 10/2014, Volume 9177, pp. 91770E - 91770E-3
Hydrogenated microcrystalline silicon oxide (μc-SiOx:H) layers are one alternative approach to ensure sufficient interlayer charge transport while maintaining... 
Conference Proceeding
Chemical Physics Letters, ISSN 0009-2614, 2006, Volume 433, Issue 1, pp. 71 - 74
Characterization of [Zn(S,O)/ZnS]/CuInS structures by X-ray and UV photoelectron spectroscopy reveals that induced by a heat-treatment the band bending in the... 
Journal Article
Advanced Materials Interfaces, ISSN 2196-7350, 11/2016, Volume 3, Issue 22, pp. 1600418 - n/a
By combining X‐ray and ultraviolet photoelectron spectroscopy, X‐ray excited Auger electron spectroscopy, and inverse photoemission spectroscopy, a detailed... 
interfaces | (Zn,Mg)O | band alignment | CdTe | transparent conductive oxides | PHOTOIONIZATION CROSS-SECTIONS | FILMS | MATERIALS SCIENCE, MULTIDISCIPLINARY | ZN1-XMGXO | LAYER | CHEMISTRY, MULTIDISCIPLINARY | CU(IN,GA)SE-2 SOLAR-CELLS | Electronic structure | Alignment | Cadmium tellurides | Electronics | Oxides | Electron transport | Conduction band | Offsets
Journal Article
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