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CrystEngComm, ISSN 1466-8033, 2018, Volume 20, Issue 14, pp. 2053 - 2059
Asymmetric island sidewall growth (AISG) is employed to reduce the threading defect density and to modify the surface/interface properties of semipolar GaN templates and InGaN/GaN quantum wells (QWs... 
Correlation | Indium gallium nitrides | Gallium nitrides | Optical properties | Quantum wells | Surface properties | Variations | Indium | Density | Defects
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2009, Volume 95, Issue 25, pp. 251905 - 251905-3
...,In)GaN layers on free-standing semipolar ( 11 2 ¯ 2 ) GaN substrates. Cross-section transmission electron microscope images revealed MD arrays at alloy... 
Journal Article
physica status solidi (a), ISSN 1862-6300, 10/2015, Volume 212, Issue 10, pp. 2205 - 2212
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 02/2011, Volume 109, Issue 3, pp. 033505 - 033505-7
Semipolar GaN-based light emitting devices show great promise because of reduced polarization-related electric fields in the quantum wells and the potential for high indium uptake in In x Ga 1 − x N quantum wells... 
PHYSICS, APPLIED | Usage | Semiconductor lasers | Gallium nitrate | Transmission electron microscopes | Analysis | Structure | Electric properties
Journal Article
ISSN 2040-3364, 3/2018, Volume 1, Issue 13, pp. 5888 - 5896
.... However, it still remains challenging to synthesize horizontal NWs efficiently. Here we introduce a novel method towards controllable growth of horizontal GaN NWs using HVPE with an Au/Ni thin film as the catalyst... 
Journal Article
Applied physics letters, ISSN 1077-3118, 2010, Volume 96, Issue 23, pp. 231912 - 231912-3
Nonpolar GaN-based light emitting diodes (LEDs) and laser diodes (LDs) show great promise. However, long wavelength emitters... 
PHYSICS, APPLIED | A-PLANE | DIODES | NITRIDE | NONPOLAR | WURTZITE
Journal Article
Journal of applied physics, ISSN 1089-7550, 2003, Volume 93, Issue 12, pp. 10114 - 10118
The influence of AlGaN and GaN cap layer thickness on Hall sheet carrier density and mobility was investigated for Al0.32Ga0.68N/GaN and GaN... 
TRANSPORT | PHYSICS, APPLIED | ELECTRON-MOBILITY | ALN | HOLE GAS | GROWTH | SURFACE | HEMTS | CHARGE | Research | Gallium nitrate | Aluminum | Electric properties
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2006, Volume 89, Issue 4, p. 41116
The InGaN-GaN epitaxial films were grown by low-pressure metal-organic chemical vapor deposition on a sapphire substrate, and then the light-emitting diode (LED... 
OUTPUT POWER | PHYSICS, APPLIED | MQW LEDS | FILMS | BLUE | EFFICIENCY
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 05/2015, Volume 30, Issue 5, pp. 1 - 8
Since on-axis GaN-on-sapphire substrates with low threading dislocation density are not available in the N-face orientation, we explored the growth of InAlN on vicinal... 
Vicinal substrates | N-polar | InAlN | GaN | HEMT | N-face | VAPOR-PHASE EPITAXY | PHYSICS, CONDENSED MATTER | vicinal substrates | ALGAN/GAN HEMTS | MATERIALS SCIENCE, MULTIDISCIPLINARY | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
2013, Xianggang di 1 ban., ISBN 9789623360326, 245
Book
Applied physics letters, ISSN 1077-3118, 2013, Volume 103, Issue 2, p. 022102
In this letter, we report on unipolar vertical transport characteristics in c-plane GaN/AlGaN/GaN heterostructures... 
ELECTRON | PHYSICS, APPLIED | LEAKAGE
Journal Article
IEEE electron device letters, ISSN 1558-0563, 2015, Volume 36, Issue 3, pp. 232 - 234
For conventional GaN-based high electron mobility transistors (HEMTs), the work function of gate metal is critical to electrical parameters, such as OFF-state leakage current, forward operating current, and threshold voltage... 
enhancement mode | HEMT | threshold voltage | Logic gates | HEMTs | Nickel | MODFETs | Gallium nitride | Aluminum gallium nitride | GAN | HEMTS | FIELD-EFFECT TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Advanced materials (Weinheim), ISSN 0935-9648, 2015, Volume 27, Issue 48, pp. 8067 - 8074
Journal Article
2012, Xianggang di 1 ban, ISBN 9789623360265, 333
Book
Physical Chemistry Chemical Physics, ISSN 1463-9076, 2018, Volume 20, Issue 2, pp. 1261 - 1266
The dissociation of water molecules absorbed on a cleaved non-polar GaN(11[combining macron]00) surface was studied primarily with synchrotron-based photoemission spectra and density-functional-theory calculations... 
Water chemistry | Gallium nitrides | Hydrogen atoms | Energy of dissociation | Photoelectric emission | Hydrogen production | Hydroxyl groups
Journal Article
Nano Letters, ISSN 1530-6984, 10/2017, Volume 17, Issue 10, pp. 6345 - 6352
... only available for devices operating in a reflection fashion. Here, we demonstrate three individual GaN-based metalenses working in a transmission window with extremely high operation efficiency at visible light (87%, 91.6%, and 50.6... 
image sensor | metalens | GaN nanopillars | Pancharatnam-Berry phase method | Visible metasurfaces | DIELECTRIC METASURFACES | HOLOGRAMS | PHYSICS, CONDENSED MATTER | DESIGN | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | RESOLUTION | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | LENSES | CHEMISTRY, MULTIDISCIPLINARY | GRATINGS | PHASE | POLARIZATION | ACHROMATIC METASURFACES | AXIS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2015, Volume 107, Issue 10, p. 103505
... (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2 grown by chemical vapor deposition on sapphire substrates... 
MONOLAYER MOS2 | PHYSICS, APPLIED | CHEMICAL-VAPOR-DEPOSITION | DIELECTRICS | GROWTH | GRAPHENE | THIN-FILM TRANSISTORS | Physics - Materials Science
Journal Article
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