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Science, ISSN 0036-8075, 10/2014, Volume 346, Issue 6206, pp. 256 - 259
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2017, Volume 110, Issue 17, p. 172102
We investigate the carrier relaxation and charge transfer dynamics in type-II ZnO-SnO heterojunction thin films using wavelength-dependent femtosecond... 
TRANSISTORS | STATES | PHYSICS, APPLIED | CHARGE-TRANSFER DYNAMICS | FABRICATION | TRANSIENT ABSORPTION | SEPARATION | MOS2/WS2 HETEROSTRUCTURES | SHELL QUANTUM DOTS | Current carriers | Thin films | Femtosecond | Tin oxides | Absorption | Heterojunctions | Electron transfer | Zinc oxide | Excitation | Charge transfer | Heterostructures
Journal Article
Proceedings of the National Academy of Sciences of the United States of America, ISSN 0027-8424, 10/2014, Volume 111, Issue 43, pp. 15544 - 15549
Journal Article
Journal Article
by Sodergren, Erica and Weinstock, George M and Davidson, Eric H and Cameron, R. Andrew and Gibbs, Richard A and Angerer, Robert C and Angerer, Lynne M and Arnone, Maria Ina and Burgess, David R and Burke, Robert D and Coffman, James A and Dean, Michael and Elphick, Maurice R and Ettensohn, Charles A and Foltz, Kathy R and Hamdoun, Amro and Hynes, Richard O and Klein, William H and Marzluff, William and McClay, David R and Morris, Robert L and Mushegian, Arcady and Rast, Jonathan P and Smith, L. Courtney and Thorndyke, Michael C and Vacquier, Victor D and Wessel, Gary M and Wray, Greg and Zhang, Lan and Elsik, Christine G and Ermolaeva, Olga and Hlavina, Wratko and Hofmann, Gretchen and Kitts, Paul and Landrum, Melissa J and Mackey, Aaron J and Maglott, Donna and Panopoulou, Georgia and Poustka, Albert J and Pruitt, Kim and Sapojnikov, Victor and Song, Xingzhi and Souvorov, Alexandre and Solovyev, Victor and Wei, Zheng and Whittaker, Charles A and Worley, Kim and Durbin, K. James and Shen, Yufeng and Fedrigo, Olivier and Garfield, David and Haygood, Ralph and Primus, Alexander and Satija, Rahul and Severson, Tonya and Gonzalez-Garay, Manuel L and Jackson, Andrew R and Milosavljevic, Aleksandar and Tong, Mark and Killian, Christopher E and Livingston, Brian T and Wilt, Fred H and Adams, Nikki and Bellé, Robert and Carbonneau, Seth and Cheung, Rocky and Cormier, Patrick and Cosson, Bertrand and Croce, Jenifer and Fernandez-Guerra, Antonio and Genevière, Anne-Marie and Goel, Manisha and Kelkar, Hemant and Morales, Julia and Mulner-Lorillon, Odile and Robertson, Anthony J and Goldstone, Jared V and Cole, Bryan and Epel, David and Gold, Bert and Hahn, Mark E and Howard-Ashby, Meredith and Scally, Mark and Stegeman, John J and Allgood, Erin L and Cool, Jonah and Judkins, Kyle M and McCafferty, Shawn S and Musante, Ashlan M and Obar, Robert A and Rawson, Amanda P and Rossetti, Blair J and Gibbons, Ian R and Hoffman, Matthew P and Leone, Andrew and Istrail, Sorin and Materna, Stefan C and Samanta, Manoj P and Stolc, Viktor and Tongprasit, Waraporn and ... and Sea Urchin Genome Sequencing Consortium and Medicinska fakulteten and Medicinska och farmaceutiska vetenskapsområdet and Medicinsk utvecklingsbiologi and Uppsala universitet and Institutionen för neurovetenskap
Science, ISSN 0036-8075, 11/2006, Volume 314, Issue 5801, pp. 941 - 952
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 06/2019, Volume 125, Issue 23, p. 235703
Transient absorption spectroscopy was utilized to monitor ultrafast carrier dynamics in conductive and semi-insulating 6H-SiC wafers. By tuning the excitation... 
PHYSICS, APPLIED | SILICON-CARBIDE | INAS | SPINS | DEFECT | Absorption spectroscopy | Energy gap | Spectrum analysis | Vanadium | Doping | Surface chemistry | Absorption spectra | Excitation | Time constant | Photonics
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2019, Volume 114, Issue 11, p. 112108
Femtosecond transient absorption (TA) as a probe of ultrafast carrier dynamics was conducted at near-infrared wavelengths in a series of GaN crystals. The TA... 
RECOMBINATION | PHYSICS, APPLIED | 1ST-PRINCIPLES CALCULATIONS | EFFECTIVE-MASS PARAMETERS | Femtosecond | Near infrared radiation | Crystal defects | Carrier recombination | Wavelengths | Carrier lifetime | Carrier injection | Excitation | Photon absorption | Carrier density | Dislocations
Journal Article
Nature Genetics, ISSN 1061-4036, 2014, Volume 46, Issue 4, pp. 376 - 379
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2018, Volume 112, Issue 20, p. 201904
Carrier recombination influences the performance of SiC-based optoelectronic devices, and carrier recombination via traps is one of the limiting factors of... 
PHYSICS, APPLIED | SIC POLYTYPES | SILICON-CARBIDE | SPECTRA | INAS | Carriers | Crystal defects | Trapping | Carrier recombination | Carrier lifetime | Vanadium | Optoelectronic devices | Nitrogen
Journal Article