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Applied Physics Letters, ISSN 0003-6951, 01/2016, Volume 108, Issue 1, p. 13508
Journal Article
physica status solidi (a), ISSN 1862-6300, 04/2018, Volume 215, Issue 7, pp. 1700787 - n/a
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 05/2013, Volume 113, Issue 17, p. 174503
We present a detailed analysis of trap states in InAlN/AlN/GaN double-channel high electron mobility transistors grown by pulsed metal organic chemical vapor... 
DENSITY | HEMTS | N-TYPE GAN | PHYSICS, APPLIED | Measurement | Thermal properties | High-electron-mobility transistors | Electrical conductivity | Optical properties | Innovations | Aluminum compounds | Research | Chemical vapor deposition | Methods
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 07/2012, Volume 112, Issue 2, p. 23707
The AlGaN/GaN/AlGaN double heterostructure (DH) with high electron mobility of 1862 cm(2)/Vs at room temperature and 478 cm(2)/Vs at 573K high temperature was... 
QUANTUM-WELL | DENSITY | PHYSICS, APPLIED | GAN POWER-HEMT | CONFINEMENT | CHANNEL HEMTS | SCATTERING | Thermal properties | Measurement | Usage | Semiconductors | Optical properties | Aluminum compounds | Electron mobility | Surface roughness | Chemical vapor deposition | Gallium compounds | Methods | Buffer layers | Gallium nitrides | Scattering | Aluminum gallium nitrides | Transport | Channels | Heterostructures
Journal Article
Materials Research Bulletin, ISSN 0025-5408, 05/2017, Volume 89, pp. 193 - 196
[Display omitted] •GaN films grown on sapphire substrate using a sputtered AlN nucleation layer is investigated.•Crystal quality of GaN films is improved that... 
A. Nitrides | C. TEM | B. Sputtering | D. Defects | B. Epitaxial growth | Aluminum compounds | Liquors | Nitrides | Transmission electron microscopes | Chemical vapor deposition | Epitaxy
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 06/2012, Volume 111, Issue 11, p. 114513
In our previous work [J. S. Xue et al., Appl. Phys. Lett. 100, 013507 (2012)], superior electron-transport properties are obtained in InAlN/GaN/InAlN/GaN... 
HEMTS | PHYSICS, APPLIED | HETEROSTRUCTURES | Thermal properties | Usage | Semiconductors | Optical properties | Innovations | Aluminum compounds | Transistors | Chemical vapor deposition | Gallium compounds | Methods
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2017, Volume 110, Issue 25, p. 252102
In this work, frequency-dependent capacitances and conductance measurements are adopted to investigate high temperature characteristics of trap states in... 
GAN | PHYSICS, APPLIED | FIELD-EFFECT TRANSISTORS
Journal Article
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2014, Volume 105, Issue 22, p. 223511
InAlN/InGaN/AlGaN double heterostructures were grown and characterized. Temperature-dependent Hall measurements show that the two-dimensional electron gas has... 
SAPPHIRE | PHYSICS, APPLIED | ELECTRON-MOBILITY | ALGAN/GAN HEMTS | ALLOYS | CHEMICAL VAPOR DEPOSITION | ORGANOMETALLIC COMPOUNDS | ELECTRON MOBILITY | ALUMINIUM NITRIDES | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | HALL EFFECT | TEMPERATURE RANGE 0273-0400 K | ELECTRON GAS | INDIUM COMPOUNDS | GALLIUM NITRIDES
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 07/2017, Volume 710, pp. 756 - 761
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2012, Volume 100, Issue 1, pp. 013507 - 013507-3
High quality, nearly lattice-matched InAlN/GaN/InAlN/GaN double-channel heterostructures were grown on sapphire by... 
HEMTS | PHYSICS, APPLIED
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2011, Volume 98, Issue 11, pp. 113504 - 113504-3
We report on a growth of nearly lattice-matched InAlN/GaN heterostructures on 4H-SiC substrates by pulsed metal organic chemical vapor deposition, and an... 
HEMTS | PHYSICS, APPLIED | NITRIDE | INDIUM
Journal Article
Jpn J Appl Phys, ISSN 0021-4922, 8/2013, Volume 52, Issue 8, pp. 08JB04 - 08JB04-4
The authors report the effects of growth temperature on the structural and electrical properties of InAlN/GaN heterostructures, which were grown on $c$-plane... 
PHYSICS, APPLIED | TERNARY | MOBILITY | INDIUM | LAYERS | Atomic force microscopy | Metal organic chemical vapor deposition | Electrical properties | Sapphire | Gallium nitrides | Barriers | Electron mobility | Indium | Heterostructures
Journal Article
中国科学通报:英文版, ISSN 1001-6538, 2014, Issue 12, pp. 1228 - 1234
As a promising group III-nitride semiconductor material, InAlN ternary alloy has been attracted increasing interest and widespread research efforts for... 
电子器件 | 高电子迁移率晶体管 | 化学气相沉积 | 电子应用 | 有机金属 | 异质结构 | 脉冲 | 西安电子科技大学
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2011, Volume 99, Issue 16, pp. 162105 - 162105-3
AlGaN/GaN superlattices (SLs) with and without Si doping exhibit very different properties. Because of the difference between the dielectric constants of AlGaN... 
semiconductor doping | gallium compounds | permittivity | PHYSICS, APPLIED | aluminium compounds | silicon | ground states | excited states | WAVELENGTH | semiconductor superlattices | wide band gap semiconductors | III-V semiconductors
Journal Article
Journal of Semiconductors, ISSN 1674-4926, 01/2012, Volume 33, Issue 1, pp. 014002 - 1-5
We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer, which leads to a higher... 
AlGaN/GaN/AlGaN double heterojunctions | breakdown voltage | carrier confinement | Electric potential | Semiconductors | Semiconductor devices | Gallium nitrides | Voltage | Heterojunctions | High electron mobility transistors | Aluminum gallium nitrides
Journal Article
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