X
Search Filters
Format Format
Subjects Subjects
Subjects Subjects
X
Sort by Item Count (A-Z)
Filter by Count
electricity (105) 105
basic electric elements (101) 101
electric solid state devices not otherwise provided for (99) 99
semiconductor devices (99) 99
chemistry (92) 92
metallurgy (92) 92
crystal growth (90) 90
after-treatment of single crystals or a homogeneouspolycrystalline material with defined structure (88) 88
apparatus therefor (88) 88
production of a homogeneous polycrystalline material withdefined structure (88) 88
refining by zone-melting of material (88) 88
single crystals or homogeneous polycrystalline material withdefined structure (88) 88
single-crystal-growth (88) 88
unidirectional solidification of eutectic material orunidirectional demixing of eutectoid material (88) 88
chemical surface treatment (59) 59
coating by vacuum evaporation, by sputtering, by ion implantationor by chemical vapour deposition, in general (59) 59
coating by vacuum evaporation, by sputtering, by ionimplantation or by chemical vapour deposition, in general (59) 59
coating material with metallic material (59) 59
coating metallic material (59) 59
diffusion treatment of metallic material (59) 59
inhibiting corrosion of metallic material or incrustation ingeneral (59) 59
surface treatment of metallic material by diffusion into thesurface, by chemical conversion or substitution (59) 59
physics (19) 19
calculating (16) 16
computing (16) 16
counting (16) 16
electric digital data processing (15) 15
blasting (14) 14
electric heating (14) 14
electric lighting not otherwise provided for (14) 14
electric techniques not otherwise provided for (14) 14
functional features or details of lighting devices or systemsthereof (14) 14
heating (14) 14
indexing scheme associated with subclasses f21k, f21l, f21sand f21v, relating to theform or the kind of the light sources or of the colour of thelight emitted (14) 14
lighting (14) 14
mechanical engineering (14) 14
structural combinations of lighting devices with otherarticles, not otherwise provided for (14) 14
weapons (14) 14
3c-sic (13) 13
humans (13) 13
female (11) 11
male (10) 10
performing operations (10) 10
transporting (10) 10
general tagging of cross-sectional technologies spanning over several sections of the ipc (8) 8
general tagging of new technological developments (8) 8
middle aged (8) 8
silicon carbide (8) 8
stacking fault (8) 8
technical subjects covered by former uspc (8) 8
technical subjects covered by former uspc cross-reference art collections [xracs] and digests (8) 8
technical subjects covered by former uspc cross-reference artcollections [xracs] and digests (8) 8
advertising (7) 7
aged (7) 7
arrangements or circuits for control of indicating devicesusing static means to present variable information (7) 7
cryptography (7) 7
display (7) 7
education (7) 7
materials science, multidisciplinary (7) 7
non-portable lighting devices (7) 7
seals (7) 7
systems thereof (7) 7
vehicle lighting devices specially adapted for vehicleexteriors (7) 7
brain neoplasms - surgery (6) 6
index medicus (6) 6
adult (5) 5
clinical neurology (5) 5
compounds thereof (5) 5
generation (5) 5
inorganic chemistry (5) 5
leakage current (5) 5
non-metallic elements (5) 5
stapelfehler (5) 5
anti-phase boundary (4) 4
chemistry, physical (4) 4
conversion or distribution of electric power (4) 4
dti (4) 4
dynamo-electric machines (4) 4
electrochemical stability (4) 4
electrochemistry (4) 4
elektrolyt (4) 4
energy & fuels (4) 4
epitaxy (4) 4
fmri (4) 4
physics, condensed matter (4) 4
positive elektrode (4) 4
progress (4) 4
sic (4) 4
stacking faults (4) 4
tetrahydrofuran (4) 4
aged, 80 and over (3) 3
alternating pulsed electrolysis (3) 3
animals (3) 3
awake surgery (3) 3
brain neoplasms - complications (3) 3
brain neoplasms - physiopathology (3) 3
brain tumor (3) 3
deposition (3) 3
devices using stimulated emission (3) 3
diffusion (3) 3
more...
Language Language
Publication Date Publication Date
Click on a bar to filter by decade
Slide to change publication date range


Journal of Crystal Growth, ISSN 0022-0248, 12/2018, Volume 503, pp. 64 - 64
Journal Article
J. Mater. Chem. A, ISSN 2050-7488, 2014, Volume 2, Issue 4, pp. 1144 - 1149
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2019, Volume 114, Issue 3
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2019, Volume 114, Issue 3
A single-crystal β-Ga2O3 substrate was directly attached to a polycrystalline SiC (poly-SiC) substrate using a surface-activated-bonding method to enhance heat... 
Single crystals | Gallium oxides | Heat treatment | Electrical resistivity | Polycrystals | Bonding strength | Thermal conductivity | Current voltage characteristics | Substrates
Journal Article
Journal of Materials Chemistry A, ISSN 2050-7488, 01/2014, Volume 2, Issue 4, pp. 1144 - 1149
In this work, we propose and examine a battery system with a new design concept. The battery consists of a non-noble polyvalent metal (such as Ca, Mg, Al)... 
CATHODE | ELECTRODE MATERIALS | ENERGY & FUELS | RECHARGEABLE MAGNESIUM BATTERIES | MATERIALS SCIENCE, MULTIDISCIPLINARY | ELECTROCHEMICAL STABILITY | PROGRESS | CHEMISTRY, PHYSICAL | CHALLENGES
Journal Article
Journal Article
physica status solidi (b), ISSN 0370-1972, 06/2012, Volume 249, Issue 6, pp. 1229 - 1234
Stacking faults (SFs) in the cubic polytype of silicon carbide (3C‐SiC) can bring about the leakage current in devices or cause warping of wafers. Along with... 
cubic silicon carbide | ab initio calculations | stacking faults | mechanical properties | Mechanical properties | Stacking faults | Ab initio calculations | Cubic silicon carbide | PHYSICS, CONDENSED MATTER | ELECTRON-GAS | REDUCING PLANAR DEFECTS
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 03/2014, Volume 389, pp. 108 - 111
The distribution of stacking faults (SFs) generated in 3C-SiC heteroepitaxially grown on Si substrates is analyzed. Misfit dislocations at the interface... 
A1. Growth models | B2. Semiconductor silicon compounds | A1. Planar defects | A1. Crystal morphology
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 03/2014, Volume 389, pp. R1 - R1
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 03/2014, Volume 389, p. R1
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 03/2014, Volume 389, pp. 108 - 111
Available online 16 December 2013 This article has been retracted: please see Elsevier Policy on Article Withdrawal... 
Silicon carbide
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2019, Volume 114, Issue 3, p. 32103
A single-crystal β-Ga2O3 substrate was directly attached to a polycrystalline SiC (poly-SiC) substrate using a surface-activated-bonding method to enhance heat... 
CRYSTALS | PHYSICS, APPLIED | DIFFUSIVITY | CONDUCTIVITY
Journal Article
Fusion Science and Technology, ISSN 1536-1055, 09/2015, Volume 68, Issue 2, pp. 303 - 307
Journal Article
by Nakamura, Minoru and Nishida, Nao and Kawashima, Minae and Aiba, Yoshihiro and Tanaka, Atsushi and Yasunami, Michio and Nakamura, Hitomi and Komori, Atsumasai and Nakamuta, Makoto and Zeniya, Mikio and Hashimoto, Etsuko and Ohira, Hiromasa and Yamamoto, Kazuhide and Onji, Morikazu and Kaneko, Shuichi and Honda, Masao and Yamagiwa, Satoshi and Nakao, Kazuhiko and Ichida, Takafumi and Takikawa, Hajime and Seike, Masataka and Umemura, Takeji and Ueno, Yoshiyuki and Sakisaka, Shotaro and Kikuchi, Kentaro and Ebinuma, Hirotoshi and Yamashiki, Noriyo and Tamura, Sumito and Sugawara, Yasuhiko and Mori, Akira and Yagi, Shintaro and Shirabe, Ken and Taketomi, Akinobu and Arai, Kuniaki and Monoe, Kyoko and Ichikawa, Tatsuki and Taniai, Makiko and Miyake, Yasuhiro and Kumagi, Teru and Abe, Masanori and Yoshizawa, Kaname and Joshita, Satoru and Shimoda, Shinji and Honda, Koichi and Takahashi, Hiroki and Hirano, Katsuji and Takeyama, Yasuaki and Harada, Kenichi and Migita, Kiyoshi and Ito, Masahiro and Yatsuhashi, Hiroshi and Fukushima, Nobuyoshi and Ota, Hajime and Komatsu, Tatsuji and Saoshiro, Takeo and Ishida, Jinya and Kouno, Hirotsugu and Kouno, Hirotaka and Yagura, Michiyasu and Kobayashi, Masakazu and Muro, Toyokichi and Masaki, Naohiko and Hirata, Keiichi and Watanabe, Yukio and Nakamura, Yoko and Shimada, Masaaki and Hirashima, Noboru and Komeda, Toshiki and Sugi, Kazuhiro and Koga, Michiaki and Ario, Keisuke and Takesaki, Eiichi and Maehara, Yoshihiko and Uemoto, Shinji and Kokudo, Norihiro and Tsubouchi, Hirohito and Mizokami, Masashi and Nakanuma, Yasuni and Tokunaga, Katsushi and Ishibashi, Hiromi
American Journal of Human Genetics, ISSN 0002-9297, 10/2012, Volume 91, Issue 4, pp. 721 - 728
Journal Article
physica status solidi (b), ISSN 0370-1972, 07/2008, Volume 245, Issue 7, pp. 1272 - 1280
The planar defect density of 3C‐SiC can be reduced by growing it on undulant‐Si substrates. However, specific stacking faults (SFs) remain, that expose the... 
81.10.Aj | 68.37.Lp | 68.37.Ps | 81.40.Lm | 61.72.−y | EPITAXY | PHYSICS, CONDENSED MATTER | DMOSFETS | HETEROEPITAXIAL GROWTH | SUBSTRATE
Journal Article
Materials Science Forum, ISSN 0255-5476, 05/2012, Volume 717-720, pp. 415 - 418
We carry out ab initio density functional theory calculations to investigate the fundamental mechanical properties of stacking faults in 3C-SiC, including the... 
Ab initio calculation | Density functional theory | Stacking fault | 3C-SiC | Stress
Journal Article
Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering, ISSN 0912-0289, 2017, Volume 83, Issue 9, pp. 833 - 836
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2002, Volume 237, Issue 1-4, pp. 1244 - 1249
A novel technique to eliminate planar defects in the 3C-SiC hetero-epitaxial layer on Si substrate was developed. Before growing 3C-SiC, countered slopes... 
A3. Chemical vapor deposition | A1. Growth models | A3. Vapor phase epitaxy | B2. Semiconducting silicon compounds | A1. Planar defects | A1. Crystal morphology | crystal morphology | VAPOR | chemical vapor deposition | vapor phase epitaxy | planar defects | semiconducting silicon compounds | CRYSTALLOGRAPHY | growth models
Journal Article
Electrochimica Acta, ISSN 0013-4686, 2007, Volume 52, Issue 19, pp. 6041 - 6051
Electrochemical Ni–Mo alloying of the surface of a nickel substrate was investigated using alternating pulsed electrolysis in an aqueous solution containing... 
Ni–Mo alloy | Alternating pulsed electrolysis | XPS | Induced codeposition | Molybdenum bath | Ni-Mo alloy | HYDROGEN EVOLUTION | ELECTROCHEMISTRY | AMORPHOUS/NANOCRYSTALLINE | CITRATE ELECTROLYTES | induced codeposition | COATINGS | alternating pulsed electrolysis | W AMORPHOUS-ALLOYS | ELECTRODEPOSITION | molybdenum bath | Molybdenum alloys | Molybdenum | Nickel
Journal Article
No results were found for your search.

Cannot display more than 1000 results, please narrow the terms of your search.