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Journal of Obstetrics and Gynaecology Research, ISSN 1341-8076, 11/2012, Volume 38, Issue 11, pp. 1315 - 1320
Journal Article
2009 Digest of Technical Papers International Conference on Consumer Electronics, ISSN 2158-3994, 01/2009, pp. 1 - 2
In this paper, robust noise reduction method is proposed to stably reduce the noise by applying the adaptive temporal IIR filter using the hierarchical motion... 
PSNR | Motion estimation | Gaussian noise | Noise reduction | Motion compensation | Noise robustness | Image sequences | Noise generators | Equations | Signal to noise ratio
Conference Proceeding
2008 Symposium on VLSI Technology, ISSN 0743-1562, 06/2008, pp. 120 - 121
Multi-bit vertical structure NAND (VsNAND) flash memories with 32-paired FinFET cell string have been successfully integrated for the first time. Its array... 
Silicon compounds | Flash memory | Computer architecture | Logic gates | FinFETs | Arrays | Periodic structures
Conference Proceeding
05/2019
A semiconductor device includes a substrate having first and second active regions with a field insulating layer therebetween that contacts the first and... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
10/2016
Provided is a semiconductor device with a field effect transistor. The semiconductor device includes a substrate, an active pattern on the substrate, a gate... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
01/2017
Provided is a semiconductor device with a field effect transistor. The semiconductor device includes a substrate, an active pattern on the substrate, a gate... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
기술혁신학회지, ISSN 1598-2912, 2012, Volume 15, Issue 2, pp. 323 - 344
We investigate and analyze the effect of population density on digital divide in Africa by applying the panel data analysis therein. From the estimation... 
기술정책
Journal Article
12/2012
The invention provides a memory device which includes a lower interconnection in a semiconductor substrate, the lower interconnection being made of a material... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
03/2010
Provided is a non-volatile memory device having a stacked structure that is easily highly integrated and a method of economically fabricating the non-volatile... 
INFORMATION STORAGE | SEMICONDUCTOR DEVICES | PRESENTATION OF DATA | HANDLING RECORD CARRIERS | COMPUTING | COUNTING | STATIC STORES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | PHYSICS | ELECTRIC DIGITAL DATA PROCESSING | ELECTRICITY | CALCULATING | RECORD CARRIERS | RECOGNITION OF DATA
Patent
01/2010
A nonvolatile memory device is provided that includes; a first semiconductor layer extending in a first direction, a second semiconductor layer extending in... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
12/2009
Provided are a non-volatile memory device which can be extended in a stack structure and thus can be highly integrated, and a method of manufacturing the... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
Journal Article
11/2013
A phase change memory device includes a vertically-stacked capacitor structure having large capacitance and small area. The phase change memory device includes... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
12/2012
A phase change memory device includes a vertically-stacked capacitor structure having large capacitance and small area. The phase change memory device includes... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
12/2012
PURPOSE: A phase change memory device including a stack capacitor is provided to stably apply current by changing the state of a phase change material and... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
07/2012
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to minimize a flat area of a unit memory cell including a diode and a variable... 
INFORMATION STORAGE | SEMICONDUCTOR DEVICES | STATIC STORES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | PHYSICS | ELECTRICITY
Patent
Journal of Obstetrics and Gynaecology Research, ISSN 1341-8076, 11/2012, Volume 38, Issue 11, pp. 1315 - 1320
Journal Article
12/2014
A memory device includes a lower interconnection in a semiconductor substrate, the lower interconnection being made of a material different from the... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
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