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basic electric elements (15) 15
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Plant Cell, ISSN 1040-4651, 2014, Volume 26, Issue 2, pp. 636 - 649
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 02/2017, Volume 64, Issue 2, pp. 427 - 431
Magnetization switching is confirmed for sub-3-ns pulses below 100 μA in perpendicular magnetic tunnel junctions (MTJs) down to 16 nm in diameter. The... 
Resistance | Temperature measurement | Current measurement | Cache memory | perpendicular magnetic anisotropy | Spin transfer torque (STT) | Switches | magnetic memory | STT-MRAM | Transistors | magnetic switching | Magnetic tunneling | Magnetization | Tunnel junctions
Journal Article
The Plant Cell, ISSN 1040-4651, 2/2014, Volume 26, Issue 2, pp. 636 - 649
In the Brassicaceae, intraspecific non-self pollen (compatible pollen) can germinate and grow into stigmatic papilla cells, while self-pollen or interspecific... 
Calcium | Cell walls | RESEARCH ARTICLES | Pollen tubes | Fluorescence | Pollen | Cell membranes | Plants | Papillae | Pollination | Plant cells
Journal Article
09/2019
A magnetic memory according to an embodiment includes: an electrode including a lower face, an upper face opposed to the lower face, and a side face different... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
05/2018
According to one embodiment, a magnetoresistive effect element includes: a first magnetic layer; a nonmagnetic layer provided on the first magnetic layer; a... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 04/2017, pp. 1 - 2
Magnetization switching was confirmed for sub-3-ns pulses below 100 μA in pMTJs down to 16 nm in diameter. The MR ratio exceeded 150%, satisfying requirements... 
Resistance | Power demand | Cache memory | Random access memory | Switches | Magnetic tunneling | Switching circuits
Conference Proceeding
10/2018
A magnetoresistive element according to an embodiment includes: a multilayer structure including a first magnetic layer, a second magnetic layer disposed above... 
INFORMATION STORAGE | SEMICONDUCTOR DEVICES | STATIC STORES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | PHYSICS | ELECTRICITY
Patent
11/2016
A magnetoresistive effect element includes a recording layer having magnetic anisotropy and a variable magnetization direction, a reference layer having... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
2016 IEEE Symposium on VLSI Technology, 06/2016, pp. 1 - 2
A novel perpendicular magnetic tunnel junction (MTJ) is developed that can be switched using pulse widths of around 1 ns and currents of less than 100 μA. This... 
Integrated circuits | Power demand | Scalability | Random access memory | Switches | Arrays | Magnetic tunneling
Conference Proceeding
10/2017
A device manufacturing apparatus and manufacturing method of a magnetic device. The device manufacturing apparatus can include a substrate holding portion... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY | ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
Patent
01/2016
A magnetoresistive effect element includes a recording layer having magnetic anisotropy and a variable magnetization direction, a reference layer having... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
09/2016
A magnetoresistive element according to an embodiment includes: a multilayer structure including a first magnetic layer, a second magnetic layer disposed above... 
INFORMATION STORAGE | SEMICONDUCTOR DEVICES | STATIC STORES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | PHYSICS | ELECTRICITY
Patent
07/2016
According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including a first magnetic element; second magnetic layer; an... 
INFORMATION STORAGE | SEMICONDUCTOR DEVICES | STATIC STORES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | PHYSICS | ELECTRICITY
Patent
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