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Journal Article
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2016, Volume 37, Issue 2, pp. 212 - 215
Depletion-mode field-plated Ga 2 O 3 metal-oxide-semiconductor field-effect transistors were demonstrated for the first time. Substantial enhancement in... 
Logic gates | MOSFET | Electric breakdown | Dielectrics | Object recognition | Electric fields | FILMS | field plate | current collapse | BETA-GA2O3 | breakdown | Ga2O3 | power device | dispersion | high temperature | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
1994, Astrophysics and space science library, ISBN 0792322940, Volume 181., 213
Book
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 01/2012, Volume 100, Issue 1, p. 13504
We report a demonstration of single-crystal gallium oxide (Ga2O3) metal-semiconductor field-effect transistors (MESFETs). A Sn-doped Ga2O3 layer was grown on a... 
GAN | PHYSICS, APPLIED | GROWTH
Journal Article
physica status solidi (a), ISSN 1862-6300, 01/2014, Volume 211, Issue 1, pp. 21 - 26
Gallium oxide (Ga2O3) is a strong contender for power electronic devices. The material possesses excellent properties such as a large bandgap of 4.7-4.9eV for... 
field‐effect transistors | molecular beam epitaxy | Schottky barrier diodes | MESFET | power devices | field-effect transistors | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | Ga2O3 | GAN | GROWTH | BETA-GA2O3 SINGLE-CRYSTALS | EDGE | Single crystals | Gallium oxides | Electronic devices | Semiconductors | Epitaxy | Breakdown | Molecular beam epitaxy | MESFETs
Journal Article
Proceedings of the Royal Society of London. Series B: Biological Sciences, ISSN 0962-8452, 12/2004, Volume 271, Issue Suppl 6, pp. S468 - S470
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2017, Volume 110, Issue 10, p. 103506
Ga2O3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n(-)-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped... 
ALGAN/GAN HEMTS | VOLTAGE | PHYSICS, APPLIED
Journal Article
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, ISSN 0002-7863, 12/2012, Volume 134, Issue 50, pp. 20242 - 20245
The 1,3-dipolar cycloaddition of an azomethine ylide (Prato reaction) with M3N@I-h-C-80 (denoted as M3N@C-80; M = Sc, Lu, Y, Gd) was carried out to obtain... 
FULLERENES | SC3N-AT-C-80 | C-60 | RELAXIVITY | CLUSTER | PYRAMIDALIZATION | DERIVATIVES | CHEMISTRY, MULTIDISCIPLINARY | GD3N-AT-C-80 | MRI CONTRAST AGENTS | ENDOHEDRAL METALLOFULLERENES
Journal Article
Journal Article