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Applied Physics Letters, ISSN 0003-6951, 01/2012, Volume 100, Issue 1
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2016, Volume 37, Issue 2, pp. 212 - 215
Depletion-mode field-plated Ga 2 O 3 metal-oxide-semiconductor field-effect transistors were demonstrated for the first time. Substantial enhancement in... 
Logic gates | MOSFET | Electric breakdown | Dielectrics | Object recognition | Electric fields | FILMS | field plate | current collapse | BETA-GA2O3 | breakdown | Ga2O3 | power device | dispersion | high temperature | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 2013, Volume 34, Issue 4, pp. 493 - 495
Journal Article
physica status solidi (a), ISSN 1862-6300, 01/2014, Volume 211, Issue 1, pp. 21 - 26
Gallium oxide (Ga2O3) is a strong contender for power electronic devices. The material possesses excellent properties such as a large bandgap of 4.7-4.9eV for... 
field‐effect transistors | molecular beam epitaxy | Schottky barrier diodes | MESFET | power devices | field-effect transistors | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | Ga2O3 | GAN | GROWTH | BETA-GA2O3 SINGLE-CRYSTALS | EDGE | Single crystals | Gallium oxides | Electronic devices | Semiconductors | Epitaxy | Breakdown | Molecular beam epitaxy | MESFETs
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 01/2012, Volume 100, Issue 1, p. 13504
We report a demonstration of single-crystal gallium oxide (Ga2O3) metal-semiconductor field-effect transistors (MESFETs). A Sn-doped Ga2O3 layer was grown on a... 
GAN | PHYSICS, APPLIED | GROWTH
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2016, Volume 37, Issue 2, pp. 212 - 215
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2014, Volume 104, Issue 19, p. 192104
The band alignment of Al2O3/n-Ga2O3 was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of 6.8+/-0.2 eV measured for Al2O3, the... 
PHYSICS, APPLIED | FILMS | BORDER TRAPS | GROWTH | DEVICES | BETA-GA2O3 SINGLE-CRYSTALS | EDGE | Conduction bands | Electrical properties | Valence band | Hysteresis loops | Offsets | Aluminum oxide | Metal oxides | Gallium oxides | Alignment | Organic light emitting diodes | Heterojunctions | X ray photoelectron spectroscopy | X ray spectra | Electrons
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2017, Volume 110, Issue 10, p. 103506
Ga2O3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n(-)-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped... 
ALGAN/GAN HEMTS | VOLTAGE | PHYSICS, APPLIED
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2017, Volume 38, Issue 6, pp. 783 - 785
We developed β-Ga 2 O 3 trench MOS-type Schottky barrier diodes (MOSSBDs) for the first time. A Sidoped Ga 2 O 3 layer was grown via halide vapor phase epitaxy... 
Schottky diodes | Ga₂O | Trench MOS | Schottky barriers | Crystals | Leakage currents | Schottky barrier diode | Anodes | Substrates | TRANSISTORS | BETA-GA2O3 | CRYSTALS | Ga2O3 | DEVICES | EDGE | ENGINEERING, ELECTRICAL & ELECTRONIC | Single crystals | Vapor phase epitaxy | Gallium oxides | Barriers | Organic light emitting diodes | Hafnium oxide | Leakage current | Epitaxial growth | Photolithography | Crystal structure
Journal Article
Applied Physics Express, ISSN 1882-0778, 03/2012, Volume 5, Issue 3
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2015, Volume 106, Issue 3, p. 32105
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2013, Volume 378, pp. 591 - 595
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 04/2014, Volume 392, pp. 30 - 33
We investigated the growth temperature dependence of the structural and electrical properties of Sn-doped Ga O homoepitaxial films grown on single-crystal β-Ga... 
A3. Molecular beam epitaxy | A1. Doping | B2. Semiconducting gallium oxides | A1. Crystal morphology
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 01/2016, Volume 31, Issue 3
This is a review article on the current status and future prospects of the research and development on gallium oxide (Ga2O3) power devices. Ga2O3 possesses... 
gallium oxide | molecular beam epitaxy | edge-defined film-fed growth | power devices | halide vapor phase epitaxy | THIN-FILMS | PHYSICS, CONDENSED MATTER | CHEMICAL-VAPOR-DEPOSITION | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOLECULAR-BEAM EPITAXY | Ga2O3 | ENGINEERING, ELECTRICAL & ELECTRONIC | GAN | GROWTH | BETA-GA2O3 SINGLE-CRYSTALS | ABSORPTION | EDGE
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 12/2016, Volume 55, Issue 12
beta-Ga2O3 bulk crystals were grown by the edge-defined film-fed growth (EFG) process and the floating zone process. Semiconductor substrates containing no... 
THIN-FILMS | GALLIUM OXIDE | PHYSICS, APPLIED | CONDUCTIVITY | GA2O3 | SENSORS | TRANSPARENT
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2018, Volume 113, Issue 10, p. 102103
Deep acceptor doping of β-Ga2O3 with Mg and N was demonstrated by implantation of the impurity ions into n-type bulk substrates. Systematic physical and... 
PHOSPHORUS | SINGLE-CRYSTALS | PHYSICS, APPLIED | BORON | LUMINESCENCE | SILICON | DIFFUSION | GAAS | CODIFFUSION | BETA-GALLIUMSESQUIOXIDE | Electric potential | Gallium oxides | Ion implantation | Annealing | Impurities | Doping | Thermal diffusivity | Activation | Magnesium | High voltages | Substrates
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2013, Volume 103, Issue 12, p. 123511
Single-crystal gallium oxide (Ga2O3) metal-oxide-semiconductor field-effect transistors were fabricated on a semi-insulating beta-Ga2O3 (010) substrate. A... 
SINGLE-CRYSTALS | PHYSICS, APPLIED | EDGE | GROWTH
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2018, Volume 112, Issue 2, p. 23503
The effects of ionizing radiation on β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as... 
SINGLE-CRYSTALS | ELECTRON | PHYSICS, APPLIED | DISPLACEMENT THRESHOLD ENERGY | PERFORMANCE | GENERATION | DAMAGE | CHARGE | INDUCED LEAKAGE CURRENT | Radiation effects | Semiconductor devices | Field effect transistors | Current leakage | Hardness | Silicon dioxide | MOSFETs | Radiation dosage | Metal oxides | Gamma rays | Gallium oxides | Ionizing radiation | Threshold voltage | Transistors | Radiation damage | Gates
Journal Article
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