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Surface & Coatings Technology, ISSN 0257-8972, 06/2017, Volume 320, p. 293
Silicon dioxide (SiO.sub.2) has great potential to be used for thin-film encapsulation for flexible electronic devices, but it easily peels off with a large... 
Thin films | Usage | Polyethylene terephthalate | Silicon | Dielectric films | Silica | Chemical vapor deposition | Electrical engineering | Electric properties
Journal Article
Surface & Coatings Technology, ISSN 0257-8972, 06/2017, Volume 320, p. 293
Silicon dioxide (SiO2) has great potential to be used for thin-film encapsulation for flexible electronic devices, but it easily peels off with a large... 
Encapsulation | Electronic devices | Ion bombardment | Emission analysis | Refractivity | Polyethylene terephthalate | Chemical vapor deposition | Transmittance | Optimization | Silicon dioxide | Studies | Thin films | Radio frequency | Inductively coupled plasma | Tensile stress | Emission spectra | Morphology | Silicas | Chemical bonds | Silicon films | Residual stress | Plasma deposition
Journal Article
Surface and Coatings Technology, ISSN 0257-8972, 06/2017, Volume 320, pp. 293 - 297
Journal Article
Nanoscale Research Letters, ISSN 1931-7573, 12/2019, Volume 14, Issue 1, p. 1
In this work, hafnium oxide (HfO.sub.2) thin films are deposited on p-type Si substrates by remote plasma atomic layer deposition on p-type Si at... 
Thin films | Atomic force microscopy | Annealing | Silicon | X-ray spectroscopy | Dielectric films | Silica
Journal Article
by Abolfathi, Bela and Aguado, D.S and Aguilar, Gabriela and Prieto, Carlos Allende and Almeida, Andres and Ananna, Tonima Tasnim and Anders, Friedrich and Anderson, Scott F and Andrews, Brett H and Anguiano, Borja and Aragón-Salamanca, Alfonso and Argudo-Fernández, Maria and Armengaud, Eric and Ata, Metin and Aubourg, Eric and Avila-Reese, Vladimir and Badenes, Carles and Bailey, Stephen and Balland, Christophe and Barger, Kathleen A and Barrera-Ballesteros, Jorge and Bartosz, Curtis and Bastien, Fabienne and Bates, Dominic and Baumgarten, Falk and Bautista, Julian and Beaton, Rachael and Beers, Timothy C and Belfiore, Francesco and Bender, Chad F and Bernardi, Mariangela and Bershady, Matthew A and Beutler, Florian and Bird, Jonathan C and Bizyaev, Dmitry and Blanc, Guillermo A and Blanton, Michael R and Blomqvist, Michael and Bolton, Adam S and Boquien, Médéric and Borissova, Jura and Bovy, Jo and Bradna Diaz, Christian Andres and Nielsen Brandt, William and Brinkmann, Jonathan and Brownstein, Joel R and Bundy, Kevin and Burgasser, Adam J and Burtin, Etienne and Busca, Nicolás G and Canãs, Caleb I and Cano-Diáz, Mariana and Cappellari, Michele and Carrera, Ricardo and Casey, Andrew R and Sodi, Bernardo Cervantes and Chen, Yanping and Cherinka, Brian and Chiappini, Cristina and Choi, Peter Doohyun and Chojnowski, Drew and Chuang, Chia-Hsun and Chung, Haeun and Clerc, Nicolas and Cohen, Roger E and Comerford, Julia M and Comparat, Johan and Do Nascimento, Janaina Correa and Da Costa, Luiz and Cousinou, Marie-Claude and Covey, Kevin and Crane, Jeffrey D and Cruz-Gonzalez, Irene and Cunha, Katia and Ilha, Gabriele Da Silva and Damke, Guillermo J and Darling, Jeremy and Davidson, James W and Dawson, Kyle and De Icaza Lizaola, Miguel Angel C and MacOrra, Axel De La and De La Torre, Sylvain and De Lee, Nathan and Sainte Agathe, Victoria De and Deconto MacHado, Alice and Dell'Agli, Flavia and Delubac, Timotheé and Diamond-Stanic, Aleksandar M and Donor, John and Downes, Juan José and Drory, Niv and Mas Des Bourboux, Hélion Du and Duckworth, Christopher J and Dwelly, Tom and Dyer, Jamie and Ebelke, Garrett and Eigenbrot, Arthur Davis and Eisenstein, Daniel J and Elsworth, Yvonne P and Emsellem, Eric and ... and Brookhaven National Laboratory (BNL), Upton, NY (United States)
Astrophysical Journal, Supplement Series, ISSN 0067-0049, 04/2018, Volume 235, Issue 2, p. 42
The fourth generation of the Sloan Digital Sky Survey (SDSS-IV) has been in operation since 2014 July. This paper describes the second data release from this... 
surveys | catalogs | atlases | NEARBY GALAXIES | HISTORIES | SPIDERS | TELESCOPE | METALLICITY | SDSS-IV MANGA | PIPE3D | ASTRONOMY & ASTROPHYSICS | MASS | PIPELINE | Cosmology and Extra-Galactic Astrophysics | Physics | Astrophysics | Surveys | ASTRONOMY AND ASTROPHYSICS | Atlases
Journal Article
Journal of engineering mechanics, ISSN 0733-9399, 2014, Volume 141, Issue 5
Understanding flow characteristics around air pockets is fundamental in the study of air entrainment and transport in pipelines. This study deals with the use... 
Samhällsbyggnadsteknik | Air-water surface | Flow separation | Air-pocket | Civil Engineering | Teknik och teknologier | Similarity profile | Flow reattachment | High-speed particle image velocimetry (HSPIV) | Engineering and Technology | Water Engineering | Flow visualization | Vattenteknik | Shear layer
Journal Article
by Blanton, Michael R and Bershady, Matthew A and Abolfathi, Bela and Albareti, Franco D and Prieto, Carlos Allende and Almeida, Andres and Alonso-García, Javier and Anders, Friedrich and Anderson, Scott F and Andrews, Brett and Aquino-Ortíz, Erik and Aragón-Salamanca, Alfonso and Argudo-Fernández, Maria and Armengaud, Eric and Aubourg, Eric and Avila-Reese, Vladimir and Badenes, Carles and Bailey, Stephen and Barger, Kathleen A and Barrera-Ballesteros, Jorge and Bartosz, Curtis and Bates, Dominic and Baumgarten, Falk and Bautista, Julian and Beaton, Rachael and Beers, Timothy C and Belfiore, Francesco and Bender, Chad F and Berlind, Andreas A and Bernardi, Mariangela and Beutler, Florian and Bird, Jonathan C and Bizyaev, Dmitry and Blanc, Guillermo A and Blomqvist, Michael and Bolton, Adam S and Boquien, Médéric and Borissova, Jura and Bosch, Remco Van Den and Bovy, Jo and Brandt, William N and Brinkmann, Jonathan and Brownstein, Joel R and Bundy, Kevin and Burgasser, Adam J and Burtin, Etienne and Busca, Nicolás G and Cappellari, Michele and Carigi, Maria Leticia Delgado and Carlberg, Joleen K and Rosell, Aurelio Carnero and Carrera, Ricardo and Chanover, Nancy J and Cherinka, Brian and Cheung, Edmond and Chew, Yilen Gómez Maqueo and Chiappini, Cristina and Choi, Peter Doohyun and Chojnowski, Drew and Chuang, Chia-Hsun and Chung, Haeun and Cirolini, Rafael Fernando and Clerc, Nicolas and Cohen, Roger E and Comparat, Johan and Costa, Luiz Da and Cousinou, Marie-Claude and Covey, Kevin and Crane, Jeffrey D and Croft, Rupert A. C and Cruz-Gonzalez, Irene and Cuadra, Daniel Garrido and Cunha, Katia and Damke, Guillermo J and Darling, Jeremy and Davies, Roger and Dawson, Kyle and Macorra, Axel De La and Dell'Agli, Flavia and Lee, Nathan De and Delubac, Timothée and Mille, Francesco Di and Diamond-Stanic, Aleks and Cano-Díaz, Mariana and Donor, John and Downes, Juan José and Drory, Niv and Bourboux, Hélion Du Mas Des and Duckworth, Christopher J and Dwelly, Tom and Dyer, Jamie and Ebelke, Garrett and Eigenbrot, Arthur D and Eisenstein, Daniel J and Emsellem, Eric and Eracleous, Mike and Escoffier, Stephanie and Evans, Michael L and Fan, Xiaohui and Fernández-Alvar, Emma and ... and SLAC National Accelerator Lab., Menlo Park, CA (United States) and Brookhaven National Laboratory (BNL), Upton, NY (United States)
Astronomical Journal, ISSN 0004-6256, 07/2017, Volume 154, Issue 1, p. 28
Journal Article
Surface and Coatings Technology, ISSN 0257-8972, 2018
Passivated emitter and rear contact (PERC) silicon solar cell is one of the most promising high-efficiency solar cells, which uses aluminum oxide (Al O ) and... 
Minority carrier lifetime | Tetramethylsilane | Inductively coupled plasma chemical vapor deposition | Passivated emitter and rear contact | Silicon nitride
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2019, Volume 66, Issue 8, pp. 3441 - 3446
A GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) using tri-gate architecture and hybrid ferroelectric charge trap gate stack is... 
Performance evaluation | MIS-HEMT | normally-off | tri-gate | Dielectrics | Gallium nitride | AlGaN/GaN | enhancement mode | Logic gates | ferroelectric materials | Nanoscale devices | Wide band gap semiconductors | charge trap gate stack | Aluminum gallium nitride
Journal Article
Progress in Photovoltaics: Research and Applications, ISSN 1062-7995, 05/2013, Volume 21, Issue 3, pp. 374 - 378
Journal Article
Surface & Coatings Technology, ISSN 0257-8972, 02/2019, Volume 359, pp. 247 - 251
High density of the inductively coupled plasma chemical vapor deposition (ICPCVD) enables growth of films on soft substrate such as polyethylene terephthalate... 
Silicon oxide | Polyethylene terephthalate | Inductively coupled plasma | Optical emission spectroscopy | Tetramethylsilane | Hydrochloric acid | Plasma | Organic chemistry | Silicon oxides | Chemical vapor deposition | Substrates | Silicon dioxide
Journal Article
by Albareti, Franco D and Prieto, Carlos Allende and Almeida, Andres and Anders, Friedrich and Anderson, Scott and Andrews, Brett H and Aragón-Salamanca, Alfonso and Argudo-Fernández, Maria and Armengaud, Eric and Aubourg, Eric and Avila-Reese, Vladimir and Badenes, Carles and Bailey, Stephen and Barbuy, Beatriz and Barger, Kat and Barrera-Ballesteros, Jorge and Bartosz, Curtis and Basu, Sarbani and Bates, Dominic and Battaglia, Giuseppina and Baumgarten, Falk and Baur, Julien and Bautista, Julian and Beers, Timothy C and Belfiore, Francesco and Bershady, Matthew and De Lis, Sara Bertran and Bird, Jonathan C and Bizyaev, Dmitry and Blanc, Guillermo A and Blanton, Michael and Blomqvist, Michael and Bolton, Adam S and Borissova, J and Bovy, Jo and Brandt, William Nielsen and Brinkmann, Jonathan and Brownstein, Joel R and Bundy, Kevin and Burtin, Etienne and Busca, Nicolás G and Chavez, Hugo Orlando Camacho and Diaz, M. Cano and Cappellari, Michele and Carrera, Ricardo and Chen, Yanping and Cherinka, Brian and Cheung, Edmond and Chiappini, Cristina and Chojnowski, Drew and Chuang, Chia-Hsun and Chung, Haeun and Cirolini, Rafael Fernando and Clerc, Nicolas and Cohen, Roger E and Comerford, Julia M and Comparat, Johan and Correa Do Nascimento, Janaina and Cousinou, Marie-Claude and Covey, Kevin and Crane, Jeffrey D and Croft, Rupert and Cunha, Katia and Darling, Jeremy and Davidson, James W and Dawson, Kyle and Da Costa, Luiz and Da Silva Ilha, Gabriele and Machado, Alice Deconto and Delubac, Timothée and De Lee, Nathan and De La Macorra, Axel and De La Torre, Sylvain and Diamond-Stanic, Aleksandar M and Donor, John and Downes, Juan Jose and Drory, Niv and Du, Cheng and Du Mas Des Bourboux, Hélion and Dwelly, Tom and Ebelke, Garrett and Eigenbrot, Arthur and Eisenstein, Daniel J and Elsworth, Yvonne P and Emsellem, Eric and Eracleous, Michael and Escoffier, Stephanie and Evans, Michael L and Falcón-Barroso, Jesus and Fan, Xiaohui and Favole, Ginevra and Fernandez-Alvar, Emma and Fernandez-Trincado, J.G and Feuillet, Diane and Fleming, Scott W and Font-Ribera, Andreu and Freischlad, Gordon and Frinchaboy, Peter and Fu, Hai and Gao, Yang and ...
Astrophysical Journal, Supplement Series, ISSN 0067-0049, 12/2017, Volume 233, Issue 2, p. 25
The fourth generation of the Sloan Digital Sky Survey (SDSS-IV) began observations in 2014 July. It pursues three core programs: the Apache Point Observatory... 
surveys | catalogs | atlases | POPULATION | TELESCOPE | STAR-FORMATION | MANGA | LAMOST | CATALOG | ASTRONOMY & ASTROPHYSICS | GAIA-ESO SURVEY | GAS | MILKY-WAY | EMISSION
Journal Article
Nanoscale research letters, ISSN 1931-7573, 03/2019, Volume 14, Issue 1, p. 83
In this work, hafnium oxide (HfO ) thin films are deposited on p-type Si substrates by remote plasma atomic layer deposition on p-type Si at 250 °C, followed... 
Journal Article